The paper has reported the structural,transport and optical properties of boron doped zinc oxide（ZnO：B） thin films grown on glass substrate by sol-gel spin coating process.It is observed from the analysis of the X-...The paper has reported the structural,transport and optical properties of boron doped zinc oxide（ZnO：B） thin films grown on glass substrate by sol-gel spin coating process.It is observed from the analysis of the X-ray diffraction（XRD） results that the crystalline quality of the films is improved with increasing B concentration.A crystallite size of ～17 nm is obtained for B doped films.A minimum resistivity of 7.9×10-4 Ω.cm is obtained at 0.6 at.% of B concentration in the ZnO：B films.Ionized and intragrain cluster scattering are found to dominate the scattering mechanism in ZnO：B films.Optical interference pattern in transmittance spectra shows good homogeneity with a transparency of ～88% in the visible region.The band gap of the films is increased from 3.24 to 3.35 eV with increasing B concentration.Band gap widening is analyzed in terms of Burstein-Moss shift.The origin of the broad band photoluminescence（PL） spectra is explained in terms of the intragrain cluster scattering.展开更多
The effect of Al doping on the J-V characteristics sol-gel derived of ZnO/p-Si photodiodes was investigated.The resistivity of Si was 0.1Ω·cm.ZnO films annealed at 500℃ were of the best quality.To investigate t...The effect of Al doping on the J-V characteristics sol-gel derived of ZnO/p-Si photodiodes was investigated.The resistivity of Si was 0.1Ω·cm.ZnO films annealed at 500℃ were of the best quality.To investigate the spectral response of the photodiodes,the J-V characteristics were measured under different monochromatic lights at wavelength 420,530,570 and 630 nm.The diodes exhibit strong responsivity in the blue region at 420 nm.The responsivity is 0.22 A/W for Al doped （0.8 wt pct） photodiode,whereas for the undoped photodiode,it was much lower.An estimate of the responsivity as a function of wavelength has been made in terms of the width of depletion region of photodiodes.展开更多
Variation of nonlinear optical properties with surface roughness of ZnO thin films deposited on coming glass substrates at different annealing temperature （TA） was reported. The films were characterized by X-ray dif...Variation of nonlinear optical properties with surface roughness of ZnO thin films deposited on coming glass substrates at different annealing temperature （TA） was reported. The films were characterized by X-ray diffraction （XRD）, UV-Vis-NIR transmission and single beam z-scan technique using second harmonics of Nd：YAG laser. Surface morphology of the samples was investigated by atomic force microscopy （AFM）. Surface roughness was found minimum （8.4 nm） for ZnO sample annealed at 450℃. The nonlinear optical properties （NLO） were found to be dependent on surface roughness and the highest value of third order nonlinear susceptibility （X（3）=4.3x 10-7 esu） was obtained for ZnO at TA 450℃.展开更多
基金support from MNRE Project No. 31/7/2004-05/PV-R&D,Govt. of India
文摘The paper has reported the structural,transport and optical properties of boron doped zinc oxide（ZnO：B） thin films grown on glass substrate by sol-gel spin coating process.It is observed from the analysis of the X-ray diffraction（XRD） results that the crystalline quality of the films is improved with increasing B concentration.A crystallite size of ～17 nm is obtained for B doped films.A minimum resistivity of 7.9×10-4 Ω.cm is obtained at 0.6 at.% of B concentration in the ZnO：B films.Ionized and intragrain cluster scattering are found to dominate the scattering mechanism in ZnO：B films.Optical interference pattern in transmittance spectra shows good homogeneity with a transparency of ～88% in the visible region.The band gap of the films is increased from 3.24 to 3.35 eV with increasing B concentration.Band gap widening is analyzed in terms of Burstein-Moss shift.The origin of the broad band photoluminescence（PL） spectra is explained in terms of the intragrain cluster scattering.
基金supported by Department of Science and Technology (DST) under the project SR/WOS-A/PS-06/2006by Defence Research and Development Organization (DRDO),Govt. of India under the project ERIP/ER/0503515/M01/847
文摘The effect of Al doping on the J-V characteristics sol-gel derived of ZnO/p-Si photodiodes was investigated.The resistivity of Si was 0.1Ω·cm.ZnO films annealed at 500℃ were of the best quality.To investigate the spectral response of the photodiodes,the J-V characteristics were measured under different monochromatic lights at wavelength 420,530,570 and 630 nm.The diodes exhibit strong responsivity in the blue region at 420 nm.The responsivity is 0.22 A/W for Al doped （0.8 wt pct） photodiode,whereas for the undoped photodiode,it was much lower.An estimate of the responsivity as a function of wavelength has been made in terms of the width of depletion region of photodiodes.
基金DRDO,UGC and DST for financial support under SAP and FIST program,respectively
文摘Variation of nonlinear optical properties with surface roughness of ZnO thin films deposited on coming glass substrates at different annealing temperature （TA） was reported. The films were characterized by X-ray diffraction （XRD）, UV-Vis-NIR transmission and single beam z-scan technique using second harmonics of Nd：YAG laser. Surface morphology of the samples was investigated by atomic force microscopy （AFM）. Surface roughness was found minimum （8.4 nm） for ZnO sample annealed at 450℃. The nonlinear optical properties （NLO） were found to be dependent on surface roughness and the highest value of third order nonlinear susceptibility （X（3）=4.3x 10-7 esu） was obtained for ZnO at TA 450℃.
