CO_(2)reduction reaction(CO_(2)RR)electrolyzers based on gas diffusion electrode(GDE)enable the direct mass transfer of CO_(2)to the catalyst surface for participation in the reaction,thereby establishing an efficient...CO_(2)reduction reaction(CO_(2)RR)electrolyzers based on gas diffusion electrode(GDE)enable the direct mass transfer of CO_(2)to the catalyst surface for participation in the reaction,thereby establishing an efficient three-phase reaction interface that significantly enhances current density.However,current hydrophobic modification methods face difficulties in achieving precise and substantial control over wettability,and the hydrophobic modifiers tend to significantly impair the conductivity of the electrode and ion transport capabilities.This study employs Nafion ionomers to hydrophobically modify the threedimensional catalyst layer,revealing the bifunctionality of Nafion.The fluorinated backbone of Nafion ensures the hydrophobicity of the entire catalyst layer,while its sulfonic acid groups promote ion transport,without significantly affecting the conductivity of the electrode.Furthermore,by employing modifiers with distinct wettability characteristics,a highly efficient and large-scale manipulation of the hydrophilic/hydrophobic properties of the catalyst layer was successfully realized.The electrode,constructed with silver nanopowder as a representative catalyst and modified with the hydrophobic ionomer Nafion,exhibits a substantial enhancement in both catalytic activity and durability.The optimized electrode exhibited exceptional electrocatalytic performance in both flow cell and membrane electrode assembly(MEA)configurations.Notably,in the MEA,the electrode achieved a remarkable CO Faradaic efficiency(FE)of 93.3%at a total current density of 200 mA cm^(-2),while maintaining stable operation for over 62 h.展开更多
As the size of semiconductor devices shrinks,there is an escalating demand for carbon hard mask films with high etching selectivity for effective pattern transfer and excellent optical transparency,especially at the 6...As the size of semiconductor devices shrinks,there is an escalating demand for carbon hard mask films with high etching selectivity for effective pattern transfer and excellent optical transparency,especially at the 633 nm alignment wavelength used in photolithography.However,simultaneously achieving high etch selectivity and high optical transparency in carbon films deposited by plasma-enhanced chemical vapor deposition(PECVD)is challenging,due to the conflicting effects of deposition temperature and ion bombardment energy.This study describes the design and implementation of a deposition-etching(dep-etch)process that addresses the challenge of inherent trade-off between low extinction coefficient(k,at 633 nm)and high etch selectivity by an integrated inductively coupled plasma and capacitive coupled plasma generator plasma-enhanced chemical vapor deposition(ICP-CCP PECVD)platform,creating a hybrid dep-etch system that decouples film transparency from etch selectivity by enhancing plasma density and coupling ion bombardment for low-temperature deposition.This process prevents the formation of large sp^(2) clusters,reducing film defects,facilitating the escape of hydrogen atoms,and promoting the formation of sp^(3)C-C bonds.Consequently,the films meet the stringent criteria for advanced carbon hard mask applications,achieving an ultra-low extinction coefficient below 0.01 at 633 nm,and etching selectivity of 18.3:1 against thermal oxide SiO_(2).展开更多
基金National Key R&D Program of China(2023YFA1507902,2021YFA1500804)the National Natural Science Foundation of China(22121004,22038009,22250008)+2 种基金the Haihe Laboratory of Sustainable Chemical Transformations(CYZC202107)the Program of Introducing Talents of Discipline to Universities,China(No.BP0618007)the Xplorer Prize,China,for their financial support。
文摘CO_(2)reduction reaction(CO_(2)RR)electrolyzers based on gas diffusion electrode(GDE)enable the direct mass transfer of CO_(2)to the catalyst surface for participation in the reaction,thereby establishing an efficient three-phase reaction interface that significantly enhances current density.However,current hydrophobic modification methods face difficulties in achieving precise and substantial control over wettability,and the hydrophobic modifiers tend to significantly impair the conductivity of the electrode and ion transport capabilities.This study employs Nafion ionomers to hydrophobically modify the threedimensional catalyst layer,revealing the bifunctionality of Nafion.The fluorinated backbone of Nafion ensures the hydrophobicity of the entire catalyst layer,while its sulfonic acid groups promote ion transport,without significantly affecting the conductivity of the electrode.Furthermore,by employing modifiers with distinct wettability characteristics,a highly efficient and large-scale manipulation of the hydrophilic/hydrophobic properties of the catalyst layer was successfully realized.The electrode,constructed with silver nanopowder as a representative catalyst and modified with the hydrophobic ionomer Nafion,exhibits a substantial enhancement in both catalytic activity and durability.The optimized electrode exhibited exceptional electrocatalytic performance in both flow cell and membrane electrode assembly(MEA)configurations.Notably,in the MEA,the electrode achieved a remarkable CO Faradaic efficiency(FE)of 93.3%at a total current density of 200 mA cm^(-2),while maintaining stable operation for over 62 h.
基金supported by the National Key R&D Program of China(2021YFA1500804)the National Natural Science Foundation of China(22121004,22038009,22250008)the Haihe Laboratory of Sustainable Chemical Transformations,the Program of Introducing Talents of Discipline to Universities(BP0618007)。
文摘As the size of semiconductor devices shrinks,there is an escalating demand for carbon hard mask films with high etching selectivity for effective pattern transfer and excellent optical transparency,especially at the 633 nm alignment wavelength used in photolithography.However,simultaneously achieving high etch selectivity and high optical transparency in carbon films deposited by plasma-enhanced chemical vapor deposition(PECVD)is challenging,due to the conflicting effects of deposition temperature and ion bombardment energy.This study describes the design and implementation of a deposition-etching(dep-etch)process that addresses the challenge of inherent trade-off between low extinction coefficient(k,at 633 nm)and high etch selectivity by an integrated inductively coupled plasma and capacitive coupled plasma generator plasma-enhanced chemical vapor deposition(ICP-CCP PECVD)platform,creating a hybrid dep-etch system that decouples film transparency from etch selectivity by enhancing plasma density and coupling ion bombardment for low-temperature deposition.This process prevents the formation of large sp^(2) clusters,reducing film defects,facilitating the escape of hydrogen atoms,and promoting the formation of sp^(3)C-C bonds.Consequently,the films meet the stringent criteria for advanced carbon hard mask applications,achieving an ultra-low extinction coefficient below 0.01 at 633 nm,and etching selectivity of 18.3:1 against thermal oxide SiO_(2).
