<span style="white-space:normal;">The study of high dielectric materials has received great attention lately as a key passive component for the application of metal-insulator-metal (MIM) capacitors. In...<span style="white-space:normal;">The study of high dielectric materials has received great attention lately as a key passive component for the application of metal-insulator-metal (MIM) capacitors. In this paper, 50 nm thick Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;"> thin films have been prepared by atomic layer deposition technique on indium tin oxide (ITO) pre-coated glass substrates and titanium nitride (TiN) coated Si substrates with typical MIM capacitor structure. Photolithography and metal lift-off technique were used for processing of the MIM capacitors. Semiconductor Analyzer with probe station was used to perform capacitance-voltage (C-V) characterization with low-medium frequency range. Current-voltage (I-V) characteristics of MIM capacitors were measured on precision source/measurement system. The performance of Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;"> films of MIM capacitors on glass was examined in the voltage range from <span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span></span></span>5 to 5 V with a frequency range from 10 kHz to 5 MHz. Au/Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;">/ITO/Glass MIM capacitors demonstrate a capacitance density of 1.6 fF/μm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;">at 100 kHz, a loss tangent ~0.005 at 100 kHz and a leakage current of 1.79 × 10</span><sup style="white-space:normal;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span></span></span>8</sup><span style="white-space:normal;"> A/cm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;"> at 1 MV/cm (5 V) at room temperature. Au/Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;">/TiN/Si MIM capacitors demonstrate a capacitance density of 1.5 fF/μm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;"> at 100 kHz, a loss tangent ~0.007 at 100 kHz and a lower leakage current of 2.93 × 10</span><sup style="white-space:normal;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span></span></span>10</sup><span style="white-space:normal;"> A/cm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;"> at 1 MV/cm (5 V) at room temperature. The obtained electrical properties could indicate a promising application of MIM Capacitors.</span>展开更多
Safe and efficient capturing of volatile radioiodine is of extremely important significance in the treatment of spent fuel.Herein,the flake channels in gelatin-hydroxyapatite(HAP@Ge)cryogel with excellent flame retard...Safe and efficient capturing of volatile radioiodine is of extremely important significance in the treatment of spent fuel.Herein,the flake channels in gelatin-hydroxyapatite(HAP@Ge)cryogel with excellent flame retardant properties were constructed by immobilizing hydroxyapatite nanorods(HAP)on Gelatin(Ge)cryogel for enhancing the capturing of iodine.The immobilization of HAP nanorods enhanced thermal stability,provided low rates of dynamic heat transfer and dissipation,and remarkably improved the flame retardant and smoke suppression properties of the Ge cryogel,which can effectively prevent the occurrence of safety incidents caused by further thermal degradation or combustion of this cryogel.More importantly,it was effective in improving the rapid enrichment of iodine,resulting in a high adsorption capacity.The maximum adsorption capacity of HAP@Ge cryogel for iodine vapor reached 2693 mg/g at equilibrium.The high adsorption capacity for iodine was attributed to the multi-scale porous structure in HAP@Ge cryogel,which offered effective channels for iodine diffusion,whereas the numerous complex and irregular flakes provided sufficient number of active sites for iodine capture.The adsorption process was chemical in nature and involved the-PO_(4)^(3-),-OH,-C=O,and-NHR groups on HAP@Ge cryogel.Moreover,the complex porous structure of HAP@Ge cryogel enhanced the physical capturing of iodine.These advantages,such as low-cost raw material,simple preparation method,good flame retardancy,and excellent capturing performance for iodine indicated that HAP@Ge cryogel is a potential candidate for the removal of radioactive iodine in the exhaust gas stream of post-treatment plants.展开更多
文摘<span style="white-space:normal;">The study of high dielectric materials has received great attention lately as a key passive component for the application of metal-insulator-metal (MIM) capacitors. In this paper, 50 nm thick Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;"> thin films have been prepared by atomic layer deposition technique on indium tin oxide (ITO) pre-coated glass substrates and titanium nitride (TiN) coated Si substrates with typical MIM capacitor structure. Photolithography and metal lift-off technique were used for processing of the MIM capacitors. Semiconductor Analyzer with probe station was used to perform capacitance-voltage (C-V) characterization with low-medium frequency range. Current-voltage (I-V) characteristics of MIM capacitors were measured on precision source/measurement system. The performance of Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;"> films of MIM capacitors on glass was examined in the voltage range from <span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span></span></span>5 to 5 V with a frequency range from 10 kHz to 5 MHz. Au/Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;">/ITO/Glass MIM capacitors demonstrate a capacitance density of 1.6 fF/μm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;">at 100 kHz, a loss tangent ~0.005 at 100 kHz and a leakage current of 1.79 × 10</span><sup style="white-space:normal;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span></span></span>8</sup><span style="white-space:normal;"> A/cm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;"> at 1 MV/cm (5 V) at room temperature. Au/Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;">/TiN/Si MIM capacitors demonstrate a capacitance density of 1.5 fF/μm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;"> at 100 kHz, a loss tangent ~0.007 at 100 kHz and a lower leakage current of 2.93 × 10</span><sup style="white-space:normal;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span></span></span>10</sup><span style="white-space:normal;"> A/cm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;"> at 1 MV/cm (5 V) at room temperature. The obtained electrical properties could indicate a promising application of MIM Capacitors.</span>
基金Natural Science Foundation of Sichuan Province(2022NSFSC0303,2022NSFSC0388,2022NSFSC0293)NHC Key Laboratory of Nuclear Technology Medical Transformation(Mianyang Central Hospital)(2022HYX016)Doctoral Foundation of Southwest University of Science and Technology(20zx7131).
文摘Safe and efficient capturing of volatile radioiodine is of extremely important significance in the treatment of spent fuel.Herein,the flake channels in gelatin-hydroxyapatite(HAP@Ge)cryogel with excellent flame retardant properties were constructed by immobilizing hydroxyapatite nanorods(HAP)on Gelatin(Ge)cryogel for enhancing the capturing of iodine.The immobilization of HAP nanorods enhanced thermal stability,provided low rates of dynamic heat transfer and dissipation,and remarkably improved the flame retardant and smoke suppression properties of the Ge cryogel,which can effectively prevent the occurrence of safety incidents caused by further thermal degradation or combustion of this cryogel.More importantly,it was effective in improving the rapid enrichment of iodine,resulting in a high adsorption capacity.The maximum adsorption capacity of HAP@Ge cryogel for iodine vapor reached 2693 mg/g at equilibrium.The high adsorption capacity for iodine was attributed to the multi-scale porous structure in HAP@Ge cryogel,which offered effective channels for iodine diffusion,whereas the numerous complex and irregular flakes provided sufficient number of active sites for iodine capture.The adsorption process was chemical in nature and involved the-PO_(4)^(3-),-OH,-C=O,and-NHR groups on HAP@Ge cryogel.Moreover,the complex porous structure of HAP@Ge cryogel enhanced the physical capturing of iodine.These advantages,such as low-cost raw material,simple preparation method,good flame retardancy,and excellent capturing performance for iodine indicated that HAP@Ge cryogel is a potential candidate for the removal of radioactive iodine in the exhaust gas stream of post-treatment plants.
