Developing hole transporting materials(HTMs)appropriate for large-area and high-performance perovskite solar cells(PSCs)is an important issue.In this work,we report using a widely used organic semiconductor P3 HT in c...Developing hole transporting materials(HTMs)appropriate for large-area and high-performance perovskite solar cells(PSCs)is an important issue.In this work,we report using a widely used organic semiconductor P3 HT in combination with an efficient organic salt dopant trityl tetrakis(pentafluorophenyl)borate(TrTFPB)as HTM in PSCs.It is shown that the dopant can significantly enhance the conductivity of P3 HT while slightly change the film morphology.By doping P3 HT with different doping levels.展开更多
While heteroatom doping serves as a powerful strategy for devising novel polycyclic aromatic hydrocarbons(PAHs), the further fine-tuning of optoelectronic properties via the precisely altering of doping patterns remai...While heteroatom doping serves as a powerful strategy for devising novel polycyclic aromatic hydrocarbons(PAHs), the further fine-tuning of optoelectronic properties via the precisely altering of doping patterns remains a challenge. Herein, by changing the doping positions of heteroatoms in a diindenopyrene skeleton, we report two isomeric boron, sulfur-embedded PAHs, named Anti-B_(2)S_(2) and Syn-B_(2)S_(2), as electron transporting semiconductors. Detailed structure-property relationship studies revealed that the varied heteroatom positions not only change their physicochemical properties, but also largely affect their solid-state packing modes and Lewis base-triggered photophysical responses. With their low-lying frontier molecular orbital levels, n-type characteristics with electron mobilities up to 1.5 × 10^(-3)cm^(2)V^(-1)s^(-1)were achieved in solution-processed organic field-effect transistors. Our work revealed the critical role of controlling heteroatom doping patterns for designing advanced PAHs.展开更多
The recently reported non-fullerene acceptor(NFA)Y6 has been extensively investigated for high-performance organic solar cells.However,its charge transport property and physics have not been fully studied.In this work...The recently reported non-fullerene acceptor(NFA)Y6 has been extensively investigated for high-performance organic solar cells.However,its charge transport property and physics have not been fully studied.In this work,we acquired a deeper understanding of the charge transport in Y6 by fabricating and characterizing thin-film transistors(TFTs),and found that the electron mobility of Y6 is over 0.3-0.4 cm^(2)/(V⋅s)in top-gate bottom-contact devices,which is at least one order of magnitude higher than that of another well-known NFA ITIC.More importantly,we observed band-like transport in Y6 spin-coated films through temperature-dependent measurements on TFTs.This is particularly amazing since such transport behavior is rarely seen in polycrystalline organic semiconductor films.Further morphology characterization and discussions indicate that the band-like transport originates from the unique molecule packing motif of Y6 and the special phase of the film.As such,this work not only demonstrates the superior charge transport property of Y6,but also suggests the great potential of developing high-mobility n-type organic semiconductors,on the basis of Y6.展开更多
基金financially supported by the National Natural Science Foundation of China (Nos.62074054 and U21A20497)the Natural Science Foundation of Hunan Province (Nos.2018RS053,2019GK2245 and 2020JJ1002)Shenzhen Science and Technology Innovation Commission (No. RCYX20200714114537036)
文摘Developing hole transporting materials(HTMs)appropriate for large-area and high-performance perovskite solar cells(PSCs)is an important issue.In this work,we report using a widely used organic semiconductor P3 HT in combination with an efficient organic salt dopant trityl tetrakis(pentafluorophenyl)borate(TrTFPB)as HTM in PSCs.It is shown that the dopant can significantly enhance the conductivity of P3 HT while slightly change the film morphology.By doping P3 HT with different doping levels.
基金the National Natural Science Foundation of China (Nos.22375059, 22005133, 51922039 and52273174)Shenzhen Science and Technology Program (No.RCJC20200714114434015)+1 种基金Science and Technology Innovation Program of Hunan Province (No.2020RC5033)National Key Research and Development Program of China (No.2020YFC1807302) for financial support。
文摘While heteroatom doping serves as a powerful strategy for devising novel polycyclic aromatic hydrocarbons(PAHs), the further fine-tuning of optoelectronic properties via the precisely altering of doping patterns remains a challenge. Herein, by changing the doping positions of heteroatoms in a diindenopyrene skeleton, we report two isomeric boron, sulfur-embedded PAHs, named Anti-B_(2)S_(2) and Syn-B_(2)S_(2), as electron transporting semiconductors. Detailed structure-property relationship studies revealed that the varied heteroatom positions not only change their physicochemical properties, but also largely affect their solid-state packing modes and Lewis base-triggered photophysical responses. With their low-lying frontier molecular orbital levels, n-type characteristics with electron mobilities up to 1.5 × 10^(-3)cm^(2)V^(-1)s^(-1)were achieved in solution-processed organic field-effect transistors. Our work revealed the critical role of controlling heteroatom doping patterns for designing advanced PAHs.
基金The authors thank the National Key Research and Development Program(No.2021YFA1200700)the National Natural Science Foundation of China(Grant Nos.62074054 and U21A20497)+1 种基金the Natural Science Foundation of Hunan Province(Nos.2019GK2245 and 2020JJ1002)Shenzhen Science and Technology Innovation Commission(No.RCYX20200714114537036)for financial support.The work was also supported by the Fundamental Research Funds for the Central Universities.
文摘The recently reported non-fullerene acceptor(NFA)Y6 has been extensively investigated for high-performance organic solar cells.However,its charge transport property and physics have not been fully studied.In this work,we acquired a deeper understanding of the charge transport in Y6 by fabricating and characterizing thin-film transistors(TFTs),and found that the electron mobility of Y6 is over 0.3-0.4 cm^(2)/(V⋅s)in top-gate bottom-contact devices,which is at least one order of magnitude higher than that of another well-known NFA ITIC.More importantly,we observed band-like transport in Y6 spin-coated films through temperature-dependent measurements on TFTs.This is particularly amazing since such transport behavior is rarely seen in polycrystalline organic semiconductor films.Further morphology characterization and discussions indicate that the band-like transport originates from the unique molecule packing motif of Y6 and the special phase of the film.As such,this work not only demonstrates the superior charge transport property of Y6,but also suggests the great potential of developing high-mobility n-type organic semiconductors,on the basis of Y6.
