Silicon photonics(SiPh)technology has become a key platform for developing photonic integrated circuits due to its CMOS compatibility and scalable manufacturing.However,integrating efficient on-chip optical sources an...Silicon photonics(SiPh)technology has become a key platform for developing photonic integrated circuits due to its CMOS compatibility and scalable manufacturing.However,integrating efficient on-chip optical sources and in-line amplifiers remains challenging due to silicon’s indirect bandgap.In this study,we developed prefabricated standardized InAs/GaAs quantum-dot(QD)active devices optimized for micro-transfer printing and successfully integrated them on SiPh integrated circuits.By transfer-printing standardized QD devices onto specific regions of the SiPh chip,we realized O-band semiconductor optical amplifiers(SOAs),distributed feedback(DFB)lasers,and widely tunable lasers(TLs).The SOAs reached an on-chip gain of 7.5 dB at 1299 nm and maintained stable performance across a wide input power range.The integrated DFB lasers achieved waveguide(WG)-coupled output powers of up to 19.7 mW,with a side-mode suppression ratio(SMSR)of 33.3 dB,and demonstrated notable robustness against optical feedback,supporting error-free data rates of 30 Gbps without additional isolators.Meanwhile,the TLs demonstrated a wavelength tuning range exceeding 35 nm,and a WG-coupled output power greater than 3 m W.The micro-transfer printing approach effectively decouples the fabrication of non-native devices from the SiPh process,allowing back-end integration of the Ⅲ–Ⅴ devices.Our approach offers a viable path toward fully integrated Ⅲ–Ⅴ/ SiPh platforms capable of supporting high-speed,high-capacity communication.展开更多
Nanoelectromechanical(NEM)switches have the advantages of zero leakage current,abrupt switching characteristics,and harsh environmental capabilities.This makes them a promising component for digital computing circuits...Nanoelectromechanical(NEM)switches have the advantages of zero leakage current,abrupt switching characteristics,and harsh environmental capabilities.This makes them a promising component for digital computing circuits when high energy efficiency under extreme environmental conditions is important.However,to make NEM-based logic circuits commercially viable,NEM switches must be manufacturable in existing semiconductor foundry platforms to guarantee reliable switch fabrication and very large-scale integration densities,which remains a big challenge.Here,we demonstrate the use of a commercial silicon-on-insulator(SOI)foundry platform(iSiPP50G by IMEC,Belgium)to implement monolithically integrated silicon(Si)NEM switches.Using this SOI foundry platform featuring sub-200 nm lithography technology,we implemented two different types of NEM switches:(1)a volatile 3-terminal(3-T)NEM switch with a low actuation voltage of 5.6 V and(2)a bi-stable 7-terminal(7-T)NEM switch,featuring either volatile or non-volatile switching behavior,depending on the switch contact design.The experimental results presented here show how an established CMOS-compatible SOI foundry process can be utilized to realize highly integrated Si NEM switches,removing a significant barrier towards scalable manufacturing of high performance and high-density NEMbased programmable logic circuits and non-volatile memories.展开更多
Heterogeneously integrating III-V materials on silicon photonic integrated circuits has emerged as a promising approach to make advanced laser sources for optical communication and sensing applications. Tunable semico...Heterogeneously integrating III-V materials on silicon photonic integrated circuits has emerged as a promising approach to make advanced laser sources for optical communication and sensing applications. Tunable semiconductor lasers operating in the 2–2.5 μm range are of great interest for industrial and medical applications since many gases(e.g., CO_2, CO, CH_4) and biomolecules(such as blood glucose) have strong absorption features in this wavelength region. The development of integrated tunable laser sources in this wavelength range enables low-cost and miniature spectroscopic sensors. Here we report heterogeneously integrated widely tunable III-V-on-silicon Vernier lasers using two silicon microring resonators as the wavelength tuning components. The laser has a wavelength tuning range of more than 40 nm near 2.35 μm. By combining two lasers with different distributed Bragg reflectors, a tuning range of more than 70 nm is achieved. Over the whole tuning range, the side-mode suppression ratio is higher than 35 dB. As a proof-of-principle, this III-V-on-silicon Vernier laser is used to measure the absorption lines of CO. The measurement results match very well with the high-resolution transmission molecular absorption(HITRAN) database and indicate that this laser is suitable for broadband spectroscopy.展开更多
Silicon photonics has emerged as a mature technology that is expected to play a key role in critical emerging applications,including very high data rate optical communications,distance sensing for autonomous vehicles,...Silicon photonics has emerged as a mature technology that is expected to play a key role in critical emerging applications,including very high data rate optical communications,distance sensing for autonomous vehicles,photonic-accelerated computing,and quantum information processing.The success of silicon photonics has been enabled by the unique combination of performance,high yield,and high-volume capacity that can only be achieved by standardizing manufacturing technology.Today,standardized silicon photonics technology platforms implemented by foundries provide access to optimized library components,including low-loss optical routing,fast modulation,continuous tuning,high-speed germanium photodiodes,and high-effciency optical and electrical interfaces.However,silicon's relatively weak electro-optic effects result in modulators with a significant footprint and thermo-optic tuning devices that require high power consumption,which are substantial impediments for very large-scale integration in silicon photonics.Microelectromechanical systems(MEMS)technology can enhance silicon photonics with building blocks that are compact,low-loss,broadband,fast and require very low power consumption.Here,we introduce a silicon photonic MEMS platform consisting of high-performance nano-opto-electromechanical devices fully integrated alongside standard silicon photonics foundry components,with wafer-level sealing for long-term reliability,flip-chip bonding to redistribution interposers,and fibre-array attachment for high port count optical and electrical interfacing.Our experimental demonstration of fundamental silicon photonic MEMS circuit elements,including power couplers,phase shifters and wavelength-division multiplexing devices using standardized technology lifts previous impediments to enable scaling to very large photonic integrated circuits for applications in telecommunications,neuromorphic computing,sensing,programmable photonics,and quantum computing.展开更多
We demonstrate monolithically integrated n-GaAs/p-Si depletion-type optical phase shifters fabricated on a 300 mm wafer-scale Si photonics platform.We measured the phase shifter performance using Mach–Zehnder modulat...We demonstrate monolithically integrated n-GaAs/p-Si depletion-type optical phase shifters fabricated on a 300 mm wafer-scale Si photonics platform.We measured the phase shifter performance using Mach–Zehnder modulators with the GaAs/Si optical phase shifters in both arms.A modulation efficiency of V_(π)L as low as 0.3 V·cm has been achieved,which is much lower compared to a carrier-depletion type Si optical phase shifter with pn junction.While propagation loss is relatively high at.5 d B∕mm,the modulator length can be reduced by the factor of.2 for the same optical modulation amplitude of a Si reference Mach–Zehnder modulator,owing to the high modulation efficiency of the shifters.展开更多
The emerging fields of silicon(Si) photonic micro–electromechanical systems(MEMS) and optomechanics enable a wide range of novel high-performance photonic devices with ultra-low power consumption, such as integrated ...The emerging fields of silicon(Si) photonic micro–electromechanical systems(MEMS) and optomechanics enable a wide range of novel high-performance photonic devices with ultra-low power consumption, such as integrated optical MEMS phase shifters, tunable couplers, switches, and optomechanical resonators. In contrast to conventional SiO;-clad Si photonics, photonic MEMS and optomechanics have suspended and movable parts that need to be protected from environmental influence and contamination during operation. Wafer-level hermetic sealing can be a cost-efficient solution, but Si photonic MEMS that are hermetically sealed inside cavities with optical and electrical feedthroughs have not been demonstrated to date, to our knowledge. Here, we demonstrate wafer-level vacuum sealing of Si photonic MEMS inside cavities with ultra-thin caps featuring optical and electrical feedthroughs that connect the photonic MEMS on the inside to optical grating couplers and electrical bond pads on the outside. We used Si photonic MEMS devices built on foundry wafers from the iSiPP50G Si photonics platform of IMEC, Belgium. Vacuum confinement inside the sealed cavities was confirmed by an observed increase of the cutoff frequency of the electro-mechanical response of the encapsulated photonic MEMS phase shifters, due to reduction of air damping. The sealing caps are extremely thin, have a small footprint, and are compatible with subsequent flip-chip bonding onto interposers or printed circuit boards. Thus, our approach for sealing of integrated Si photonic MEMS clears a significant hurdle for their application in high-performance Si photonic circuits.展开更多
基金European Union(CALADAN)(825453)Dutch Growth Fund PhotonDelta project。
文摘Silicon photonics(SiPh)technology has become a key platform for developing photonic integrated circuits due to its CMOS compatibility and scalable manufacturing.However,integrating efficient on-chip optical sources and in-line amplifiers remains challenging due to silicon’s indirect bandgap.In this study,we developed prefabricated standardized InAs/GaAs quantum-dot(QD)active devices optimized for micro-transfer printing and successfully integrated them on SiPh integrated circuits.By transfer-printing standardized QD devices onto specific regions of the SiPh chip,we realized O-band semiconductor optical amplifiers(SOAs),distributed feedback(DFB)lasers,and widely tunable lasers(TLs).The SOAs reached an on-chip gain of 7.5 dB at 1299 nm and maintained stable performance across a wide input power range.The integrated DFB lasers achieved waveguide(WG)-coupled output powers of up to 19.7 mW,with a side-mode suppression ratio(SMSR)of 33.3 dB,and demonstrated notable robustness against optical feedback,supporting error-free data rates of 30 Gbps without additional isolators.Meanwhile,the TLs demonstrated a wavelength tuning range exceeding 35 nm,and a WG-coupled output power greater than 3 m W.The micro-transfer printing approach effectively decouples the fabrication of non-native devices from the SiPh process,allowing back-end integration of the Ⅲ–Ⅴ devices.Our approach offers a viable path toward fully integrated Ⅲ–Ⅴ/ SiPh platforms capable of supporting high-speed,high-capacity communication.
基金the European Union’s Horizon 2020 research and innovation program under grant No.780283(MORPHIC),101070332(PHORMIC),871740(ZeroAMP)the i-EDGE project,funded by the European Union(No.101092018)+1 种基金the Swiss State Secretariat for Education,Research and Innovation(SERI No.10061130)UK Research and Innovation(UKRI No.10063023).
文摘Nanoelectromechanical(NEM)switches have the advantages of zero leakage current,abrupt switching characteristics,and harsh environmental capabilities.This makes them a promising component for digital computing circuits when high energy efficiency under extreme environmental conditions is important.However,to make NEM-based logic circuits commercially viable,NEM switches must be manufacturable in existing semiconductor foundry platforms to guarantee reliable switch fabrication and very large-scale integration densities,which remains a big challenge.Here,we demonstrate the use of a commercial silicon-on-insulator(SOI)foundry platform(iSiPP50G by IMEC,Belgium)to implement monolithically integrated silicon(Si)NEM switches.Using this SOI foundry platform featuring sub-200 nm lithography technology,we implemented two different types of NEM switches:(1)a volatile 3-terminal(3-T)NEM switch with a low actuation voltage of 5.6 V and(2)a bi-stable 7-terminal(7-T)NEM switch,featuring either volatile or non-volatile switching behavior,depending on the switch contact design.The experimental results presented here show how an established CMOS-compatible SOI foundry process can be utilized to realize highly integrated Si NEM switches,removing a significant barrier towards scalable manufacturing of high performance and high-density NEMbased programmable logic circuits and non-volatile memories.
基金H2020 European Research Council(ERC)(FireSpec)INTERREG(Safeside)
文摘Heterogeneously integrating III-V materials on silicon photonic integrated circuits has emerged as a promising approach to make advanced laser sources for optical communication and sensing applications. Tunable semiconductor lasers operating in the 2–2.5 μm range are of great interest for industrial and medical applications since many gases(e.g., CO_2, CO, CH_4) and biomolecules(such as blood glucose) have strong absorption features in this wavelength region. The development of integrated tunable laser sources in this wavelength range enables low-cost and miniature spectroscopic sensors. Here we report heterogeneously integrated widely tunable III-V-on-silicon Vernier lasers using two silicon microring resonators as the wavelength tuning components. The laser has a wavelength tuning range of more than 40 nm near 2.35 μm. By combining two lasers with different distributed Bragg reflectors, a tuning range of more than 70 nm is achieved. Over the whole tuning range, the side-mode suppression ratio is higher than 35 dB. As a proof-of-principle, this III-V-on-silicon Vernier laser is used to measure the absorption lines of CO. The measurement results match very well with the high-resolution transmission molecular absorption(HITRAN) database and indicate that this laser is suitable for broadband spectroscopy.
基金supported by the European Unionthrough the H2020 project MORPHIC under grant 780283N.Q.acknowledges funding by the Swiss National Science Foundation under grant 183717.
文摘Silicon photonics has emerged as a mature technology that is expected to play a key role in critical emerging applications,including very high data rate optical communications,distance sensing for autonomous vehicles,photonic-accelerated computing,and quantum information processing.The success of silicon photonics has been enabled by the unique combination of performance,high yield,and high-volume capacity that can only be achieved by standardizing manufacturing technology.Today,standardized silicon photonics technology platforms implemented by foundries provide access to optimized library components,including low-loss optical routing,fast modulation,continuous tuning,high-speed germanium photodiodes,and high-effciency optical and electrical interfaces.However,silicon's relatively weak electro-optic effects result in modulators with a significant footprint and thermo-optic tuning devices that require high power consumption,which are substantial impediments for very large-scale integration in silicon photonics.Microelectromechanical systems(MEMS)technology can enhance silicon photonics with building blocks that are compact,low-loss,broadband,fast and require very low power consumption.Here,we introduce a silicon photonic MEMS platform consisting of high-performance nano-opto-electromechanical devices fully integrated alongside standard silicon photonics foundry components,with wafer-level sealing for long-term reliability,flip-chip bonding to redistribution interposers,and fibre-array attachment for high port count optical and electrical interfacing.Our experimental demonstration of fundamental silicon photonic MEMS circuit elements,including power couplers,phase shifters and wavelength-division multiplexing devices using standardized technology lifts previous impediments to enable scaling to very large photonic integrated circuits for applications in telecommunications,neuromorphic computing,sensing,programmable photonics,and quantum computing.
基金IMEC’s industry affiliation R&D program,National Research Foundation of KoreaMinistry of Science and ICT,South Korea(2021R1G1A1091912)。
文摘We demonstrate monolithically integrated n-GaAs/p-Si depletion-type optical phase shifters fabricated on a 300 mm wafer-scale Si photonics platform.We measured the phase shifter performance using Mach–Zehnder modulators with the GaAs/Si optical phase shifters in both arms.A modulation efficiency of V_(π)L as low as 0.3 V·cm has been achieved,which is much lower compared to a carrier-depletion type Si optical phase shifter with pn junction.While propagation loss is relatively high at.5 d B∕mm,the modulator length can be reduced by the factor of.2 for the same optical modulation amplitude of a Si reference Mach–Zehnder modulator,owing to the high modulation efficiency of the shifters.
文摘The emerging fields of silicon(Si) photonic micro–electromechanical systems(MEMS) and optomechanics enable a wide range of novel high-performance photonic devices with ultra-low power consumption, such as integrated optical MEMS phase shifters, tunable couplers, switches, and optomechanical resonators. In contrast to conventional SiO;-clad Si photonics, photonic MEMS and optomechanics have suspended and movable parts that need to be protected from environmental influence and contamination during operation. Wafer-level hermetic sealing can be a cost-efficient solution, but Si photonic MEMS that are hermetically sealed inside cavities with optical and electrical feedthroughs have not been demonstrated to date, to our knowledge. Here, we demonstrate wafer-level vacuum sealing of Si photonic MEMS inside cavities with ultra-thin caps featuring optical and electrical feedthroughs that connect the photonic MEMS on the inside to optical grating couplers and electrical bond pads on the outside. We used Si photonic MEMS devices built on foundry wafers from the iSiPP50G Si photonics platform of IMEC, Belgium. Vacuum confinement inside the sealed cavities was confirmed by an observed increase of the cutoff frequency of the electro-mechanical response of the encapsulated photonic MEMS phase shifters, due to reduction of air damping. The sealing caps are extremely thin, have a small footprint, and are compatible with subsequent flip-chip bonding onto interposers or printed circuit boards. Thus, our approach for sealing of integrated Si photonic MEMS clears a significant hurdle for their application in high-performance Si photonic circuits.
