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Procalcitonin is expressed in osteoblasts and limits bone resorption through inhibition of macrophage migration during intermittent PTH treatment 被引量:3
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作者 Anke Baranowsky Denise Jahn +17 位作者 Shan Jiang Timur Yorgan peter ludewig Jessika Appelt Kai K.Albrecht Ellen Otto Paul Knapstein Antonia Donat Jack Winneberger Lana Rosenthal Paul Köhli Cordula Erdmann Melanie Fuchs Karl-Heinz Frosch Serafeim Tsitsilonis Michael Amling Thorsten Schinke Johannes Keller 《Bone Research》 SCIE CAS CSCD 2022年第1期107-121,共15页
Intermittent injections of parathyroid hormone(iPTH) are applied clinically to stimulate bone formation by osteoblasts, although continuous elevation of parathyroid hormone(PTH) primarily results in increased bone res... Intermittent injections of parathyroid hormone(iPTH) are applied clinically to stimulate bone formation by osteoblasts, although continuous elevation of parathyroid hormone(PTH) primarily results in increased bone resorption. Here, we identified Calca,encoding the sepsis biomarker procalcitonin(ProCT), as a novel target gene of PTH in murine osteoblasts that inhibits osteoclast formation. During iPTH treatment, mice lacking ProCT develop increased bone resorption with excessive osteoclast formation in both the long bones and axial skeleton. Mechanistically, ProCT inhibits the expression of key mediators involved in the recruitment of macrophages, representing osteoclast precursors. Accordingly, ProCT arrests macrophage migration and causes inhibition of early but not late osteoclastogenesis. In conclusion, our results reveal a potential role of osteoblast-derived ProCT in the bone microenvironment that is required to limit bone resorption during iPTH. 展开更多
关键词 TREATMENT representing SKELETON
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Electrically pumped quantum-dot lasersgrownon 300 mm patterned Si photonic wafers 被引量:6
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作者 Chen Shang Kaiyin Feng +9 位作者 Eamonn THughes Andrew Clark Mukul Debnath Rosalyn Koscica Gerald Leake Joshua Herman David Harame peter ludewig Yating Wan John E.Bowers 《Light: Science & Applications》 SCIE EI CAS CSCD 2022年第11期2698-2705,共8页
Monolithic integration of quantum dot(QD)gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources.Recent developments have demonstrated superior device re... Monolithic integration of quantum dot(QD)gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources.Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy ofⅡ-Ⅴdevices on Si at elevated temperatures.Yet,thick,defect management epi designs prevent vertical light coupling from the gain region to the Si-on-lnsulator waveguides.Here,we demonstrate the frst electrically pumped QD lasers grown by molecular beam epitaxy on a 300 mm patterned(001)Si wafer with a buttcoupled configuration.Unique growth and fabrication challenges imposed by the template architecture have been resolved,contributing to continuous wave lasing to 60℃and a maximum double-side output power of 126.6 mW at 20℃with a double-side wall-plug efficiency of 8.6%.The potential for robust on-chip laser operation and effcient lowloss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production. 展开更多
关键词 PUMPED QUANTUM COUPLING
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