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Electrophysiological Signatures of Visual Sensations Elicited by Direct Electrical Stimulation
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作者 Yan-Yan Li Bo Zhang +9 位作者 Jing Wang Yuri B.Saalmann Mohsen Afrasiabi peng-cheng lv Hai-Xiang Wang Huan-Huan Xiang Meng-Yang Wang Guo-Ming Luan Robert T.Knight Liang Wang 《Neuroscience Bulletin》 2025年第9期1617-1629,共13页
Direct electrical stimulation of the human cortex can produce subjective visual sensations,yet these sensations are unstable.The underlying mechanisms may stem from differences in electrophysiological activity within ... Direct electrical stimulation of the human cortex can produce subjective visual sensations,yet these sensations are unstable.The underlying mechanisms may stem from differences in electrophysiological activity within the distributed network outside the stimulated site.To address this problem,we recruited 69 patients who experienced visual sensations during invasive electrical stimulation while intracranial electroencephalography(iEEG)data were recorded.We found significantly flattened power spectral slopes in distributed regions involving different brain networks and decreased integrated information during elicited visual sensations compared with the non-sensation condition.Further analysis based on minimum information partitions revealed that the reconfigured network interactions primarily involved the inferior frontal cortex,posterior superior temporal sulcus,and temporoparietal junction.The flattened power spectral slope in the inferior frontal gyrus was also correlated with integrated information.Taken together,this study indicates that the altered electrophysiological signatures provide insights into the neural mechanisms underlying subjective visual sensations. 展开更多
关键词 PERCEPTION Power spectral slope Information integration Electrical stimulation Intracranial EEG
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High Power, Room Temperature Terahertz Emitters Based on Dopant Transitions in 6H-Silicon Carbide
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作者 James Kolodzey Guang-Chi Xuan +2 位作者 peng-cheng lv Nathan Sustersic Xin Ma 《Journal of Electronic Science and Technology》 CAS 2014年第3期250-254,共5页
Electrically pumped high power terahertz (THz) emitters that operated above room temperature in a pulse mode were fabricated from nitrogen-doped n-type 6H-SiC. The emission spectra had peaks centered on 5 THz and 12... Electrically pumped high power terahertz (THz) emitters that operated above room temperature in a pulse mode were fabricated from nitrogen-doped n-type 6H-SiC. The emission spectra had peaks centered on 5 THz and 12 THz (20 meV and 50 meV) that were attributed to radiative transitions of excitons bound to nitrogen donor impurities. Due to the relatively deep binding energies of the nitrogen donors, above 100 meV, and the high thermal conductivity of the SiC substrates, the THz output power and operating temperature were significantly higher than previous dopant based emitters. With peak applied currents of a few amperes, and a top surface area of 1 mm2, the device emitted up to 0.5 mW at liquid nitrogen temperature (77 K), and tens of microwatts up to 333 K. This result is the highest temperature of THz emission reported from impurity-based emitters. 展开更多
关键词 Intracenter radiative transitions semiconductor devices silicon carbide terahertz emitting devices wide band gap semiconductors
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