N-type Si(111) wafers have been processed by high-current pulsed electron beam(HCPEB) treatment with an increasing number of irradiation(1, 10 and 20pulses). The results of this work show that a highly porous nanostru...N-type Si(111) wafers have been processed by high-current pulsed electron beam(HCPEB) treatment with an increasing number of irradiation(1, 10 and 20pulses). The results of this work show that a highly porous nanostructure was formed after irradiation. Moreover, the high-density Si nanocrystals(Si-ncs) about 3 nm were distributed on the surface of Si wafers and exhibited3.02 e V Photoluminescence(PL) emission in blue band.The PL intensity increases with the increase in the Si-ncs' density in accordance with the quantum confinement model, which can be ascribed to the different pulse time of HCPEB treatment. The possible formation mechanisms of micropores and Si-ncs are discussed.展开更多
基金supported by the National Natural Science Foundation of China(50671042)the Ph.D.Innovation Programs Foundation of Jiangsu Province(CXZZ12_0671)
文摘N-type Si(111) wafers have been processed by high-current pulsed electron beam(HCPEB) treatment with an increasing number of irradiation(1, 10 and 20pulses). The results of this work show that a highly porous nanostructure was formed after irradiation. Moreover, the high-density Si nanocrystals(Si-ncs) about 3 nm were distributed on the surface of Si wafers and exhibited3.02 e V Photoluminescence(PL) emission in blue band.The PL intensity increases with the increase in the Si-ncs' density in accordance with the quantum confinement model, which can be ascribed to the different pulse time of HCPEB treatment. The possible formation mechanisms of micropores and Si-ncs are discussed.
