Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The chann...Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The channel of the new device is In_(0.7)Ga_(0.3)As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained.The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz.In addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.展开更多
Electronic detonators are widely used because of their advantages in real-time supervision of the whole life cycle (Zang, 2022). Due to the high requirements of the time difference synchronization between the electron...Electronic detonators are widely used because of their advantages in real-time supervision of the whole life cycle (Zang, 2022). Due to the high requirements of the time difference synchronization between the electronic initiation system and the seismic wave recording system, the Electronic detonator has not been widely used for Seismic exploration (Yang, 2020). This paper expounds the systematic and scientific test method from the aspects of the comprehensive performance of electronic detonators for exploration, the compatibility between the electronic detonator initiation system and the geophysical blasting machine system, the constraints of the geophysical explosion-related collaborative Danling managment cloud platform, and the quality of data collected by electronic detonator blasting in wells., and based on the analysis of the test results, the problems that need to be improved in the application of electronic detonators and detonation systems in the large-scale production of geophysical prospecting industry are put forward. .展开更多
基金the National Natural Science Foundation of China(Grant No.61434006).
文摘Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The channel of the new device is In_(0.7)Ga_(0.3)As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained.The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz.In addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.
文摘Electronic detonators are widely used because of their advantages in real-time supervision of the whole life cycle (Zang, 2022). Due to the high requirements of the time difference synchronization between the electronic initiation system and the seismic wave recording system, the Electronic detonator has not been widely used for Seismic exploration (Yang, 2020). This paper expounds the systematic and scientific test method from the aspects of the comprehensive performance of electronic detonators for exploration, the compatibility between the electronic detonator initiation system and the geophysical blasting machine system, the constraints of the geophysical explosion-related collaborative Danling managment cloud platform, and the quality of data collected by electronic detonator blasting in wells., and based on the analysis of the test results, the problems that need to be improved in the application of electronic detonators and detonation systems in the large-scale production of geophysical prospecting industry are put forward. .
