Influences of swift heavy ion(SHI)irradiation induced defects on electronic properties of the bulk SnSe_(2)based FETs are explored.Latent tracks and amounts of Se vacancies in the irradiated SnSe_(2)were confirmed.Red...Influences of swift heavy ion(SHI)irradiation induced defects on electronic properties of the bulk SnSe_(2)based FETs are explored.Latent tracks and amounts of Se vacancies in the irradiated SnSe_(2)were confirmed.Red shift of the A1g peak indicates that the resonance frequency of the phonons is reduced due to the defect generation in SnSe_(2).The source–drain current Ids increased at ion fluence of 1×10^(10)ions·cm^(-2),which was attributeded to the irradiation caused Se vacancies,which hence increases the concentration of conduction electrons.The carrier mobility was about 16.9 cm^(2)·V^(-1)·s^(-1)for the devices irradiated at ion fluence of 1×10^(9)ions·cm^(-2),which benefited from heavy ion irradiation enhanced interlayer coupling.The mechanism of device performance optimization after irradiation is discussed in detail.This work provides evidence that,given the electronic properties of two-dimensional material-based device,vacancies and interlayer coupling effects caused by SHI irradiation should not be ignored.展开更多
Nitrates,thiocyanates,and perchlorates are ubiquitous in the environment and can be introduced to the public through various dietary and environmental sources.Nitrates,thiocyanates,and perchlorates mainly affect healt...Nitrates,thiocyanates,and perchlorates are ubiquitous in the environment and can be introduced to the public through various dietary and environmental sources.Nitrates,thiocyanates,and perchlorates mainly affect health via the same mechanism.These toxins may act as endocrine disrupters and can result in decreased levels of thyroid hormones^([1]).展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12375261,12175287,12205350,and 62234013)the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2022424).
文摘Influences of swift heavy ion(SHI)irradiation induced defects on electronic properties of the bulk SnSe_(2)based FETs are explored.Latent tracks and amounts of Se vacancies in the irradiated SnSe_(2)were confirmed.Red shift of the A1g peak indicates that the resonance frequency of the phonons is reduced due to the defect generation in SnSe_(2).The source–drain current Ids increased at ion fluence of 1×10^(10)ions·cm^(-2),which was attributeded to the irradiation caused Se vacancies,which hence increases the concentration of conduction electrons.The carrier mobility was about 16.9 cm^(2)·V^(-1)·s^(-1)for the devices irradiated at ion fluence of 1×10^(9)ions·cm^(-2),which benefited from heavy ion irradiation enhanced interlayer coupling.The mechanism of device performance optimization after irradiation is discussed in detail.This work provides evidence that,given the electronic properties of two-dimensional material-based device,vacancies and interlayer coupling effects caused by SHI irradiation should not be ignored.
文摘Nitrates,thiocyanates,and perchlorates are ubiquitous in the environment and can be introduced to the public through various dietary and environmental sources.Nitrates,thiocyanates,and perchlorates mainly affect health via the same mechanism.These toxins may act as endocrine disrupters and can result in decreased levels of thyroid hormones^([1]).
