High crystal perfection,large diameter,and low defect density gallium antimonide(GaSb)crystals are always the targets for fabricating high-quality GaSb-based chips.Therefore,the high-mobility Te-doping GaSb and its sc...High crystal perfection,large diameter,and low defect density gallium antimonide(GaSb)crystals are always the targets for fabricating high-quality GaSb-based chips.Therefore,the high-mobility Te-doping GaSb and its scattering mechanism have been a mainstream research object.However,the complex defect recognition and underlying defect-regulating scattering mechanism have been an urgent need to clarify.Herein,we explore the intrinsic Ga vacancy and complex defect contributing to p-type characteristics in undoped GaSb,resulting in low mobility.Meanwhile,the Te-doped counterpart develops electron transport,which generates a high-mobility capacity.The first principle calculation supports that intrinsic defects have low formation energy and contribute to p-type semiconductors.However,the donor doping develops an electron transport via the impurity compensation effect,significantly enhancing mobility.Moreover,the polar optical phonon-limited Frölich scattering dominates the GaSb scattering process in a low carrier concentration and high operating temperature.This research reveals that the compensation effect can suppress intrinsic and complex defects to improve spectral signature and carrier transport behaviour,which lay a solid foundation for exploiting highmobility GaSb and high-performance GaSb-based microelectronic chips.展开更多
Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics.However,various defects are generated by the solution-based film quality i...Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics.However,various defects are generated by the solution-based film quality inevitably produces during the crystallization process,which leads to non-radiative recombination and interface mismatch.In this work,polyvinylpyrrolidone(PVP)molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector.Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI_(3)surface,which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules.The interfacial passivation for the undercoordinated Pb^(2+)defects was also verified via first-principles calculations.The electron injection barrier can be regulated via interfacial molecule engineering,leading to the result that the dark current is suppressed by five orders of magnitude to 1.57310−11 A,and the specific detectivity improved by about three orders of magnitude reaching 2.9310^(12)Jones.These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors.展开更多
基金supported by the National Natural Science Foundation of China(No.12064047)the Key Program of Yunnan Fundamental Research Projects(No.202201AS070010)the Major Project of the Yunnan Science and Technology Program(No.202202AB080019).
文摘High crystal perfection,large diameter,and low defect density gallium antimonide(GaSb)crystals are always the targets for fabricating high-quality GaSb-based chips.Therefore,the high-mobility Te-doping GaSb and its scattering mechanism have been a mainstream research object.However,the complex defect recognition and underlying defect-regulating scattering mechanism have been an urgent need to clarify.Herein,we explore the intrinsic Ga vacancy and complex defect contributing to p-type characteristics in undoped GaSb,resulting in low mobility.Meanwhile,the Te-doped counterpart develops electron transport,which generates a high-mobility capacity.The first principle calculation supports that intrinsic defects have low formation energy and contribute to p-type semiconductors.However,the donor doping develops an electron transport via the impurity compensation effect,significantly enhancing mobility.Moreover,the polar optical phonon-limited Frölich scattering dominates the GaSb scattering process in a low carrier concentration and high operating temperature.This research reveals that the compensation effect can suppress intrinsic and complex defects to improve spectral signature and carrier transport behaviour,which lay a solid foundation for exploiting highmobility GaSb and high-performance GaSb-based microelectronic chips.
基金supported by the National Natural Science Foundation of China(Nos.12064047 and 11864044)the Key Programme of Yunnan Fundamental Research Projects(No.202201AS070010)the Major Science and Technology Projects in Yunnan Province(No.202202AB080019).
文摘Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics.However,various defects are generated by the solution-based film quality inevitably produces during the crystallization process,which leads to non-radiative recombination and interface mismatch.In this work,polyvinylpyrrolidone(PVP)molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector.Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI_(3)surface,which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules.The interfacial passivation for the undercoordinated Pb^(2+)defects was also verified via first-principles calculations.The electron injection barrier can be regulated via interfacial molecule engineering,leading to the result that the dark current is suppressed by five orders of magnitude to 1.57310−11 A,and the specific detectivity improved by about three orders of magnitude reaching 2.9310^(12)Jones.These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors.
