Twisted multilayers of two-dimensional materials attract widespread research interest due to their intriguing electronic and optical properties related to their chiral symmetry breaking and moiréeffects.The two-d...Twisted multilayers of two-dimensional materials attract widespread research interest due to their intriguing electronic and optical properties related to their chiral symmetry breaking and moiréeffects.The two-dimensional transition metal dichalcogenide MoSe_(2) is a particularly promising material for twisted multilayers,capable of sustaining moiréexcitons.Here,we report on a rational bottomup synthesis approach for twisted MoSe_(2) flakes by chemical vapor transport(CVT).Screw dislocation-driven growth was forced by surface-fused SiO_(2)nanoparticles on the substrates that serve as potential nucleation points in low supersaturation condition.Thus,crystal growth by in-situ CVT under addition of MoCl_(5) leads to bulk 2H-MoSe_(2) in a temperature gradient from 900 to 820℃ with a dwell time of 96 h.Hexagonally shaped 2H-MoSe_(2) flakes were grown from 710 to 685℃ with a dwell time of 30 min on SiO_(2)@Al_(2)O_(3)(0001)substrates.Electron backscatter diffraction as well as electron microscopy reveals the screw dislocation-driven growth of triangular 3R-MoSe_(2) with individual step heights between 0.9 and 2.9 nm on SiO_(2)@Si(100)under the same conditions.Finally,twisted MoSe_(2) flakes exhibiting a twist angle of 19°with respect to the[010]zone axis could be synthesized.展开更多
基金funding from SFB 1415 subproject B04(Deutsche Forschungsgemeinschaft,No.417590517)supported by the Deutsche Forschungsgemeinschaft through the Würzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter-ct.qmat(EXC 2147,No.390858490)the support provided by the DRESDEN-concept alliance of research institutions.
文摘Twisted multilayers of two-dimensional materials attract widespread research interest due to their intriguing electronic and optical properties related to their chiral symmetry breaking and moiréeffects.The two-dimensional transition metal dichalcogenide MoSe_(2) is a particularly promising material for twisted multilayers,capable of sustaining moiréexcitons.Here,we report on a rational bottomup synthesis approach for twisted MoSe_(2) flakes by chemical vapor transport(CVT).Screw dislocation-driven growth was forced by surface-fused SiO_(2)nanoparticles on the substrates that serve as potential nucleation points in low supersaturation condition.Thus,crystal growth by in-situ CVT under addition of MoCl_(5) leads to bulk 2H-MoSe_(2) in a temperature gradient from 900 to 820℃ with a dwell time of 96 h.Hexagonally shaped 2H-MoSe_(2) flakes were grown from 710 to 685℃ with a dwell time of 30 min on SiO_(2)@Al_(2)O_(3)(0001)substrates.Electron backscatter diffraction as well as electron microscopy reveals the screw dislocation-driven growth of triangular 3R-MoSe_(2) with individual step heights between 0.9 and 2.9 nm on SiO_(2)@Si(100)under the same conditions.Finally,twisted MoSe_(2) flakes exhibiting a twist angle of 19°with respect to the[010]zone axis could be synthesized.
