In this work, a novel memristive SRAM cell is designed using seven transistors and one memristor（7T1M）. In this 7T1 M SRAM cell, the non-volatile functionality is achieved by adding a single memristor and a transist...In this work, a novel memristive SRAM cell is designed using seven transistors and one memristor（7T1M）. In this 7T1 M SRAM cell, the non-volatile functionality is achieved by adding a single memristor and a transistor to the design of a volatile SRAM cell. The designing of the 7T1 M SRAM cell also introduces VCTRL which allows bidirectional current flowing through the memristor, instead of relying on complementary input sources which would require more design components. In this article, memristive SRAM cells available from the literature are simulated using the same simulation environment for a fair comparison. Simulations show that the7T1 M SRAM cell has the least power consumption against other memristive SRAM cells in the literature. The7T1 M SRAM cell operates with an average switching speed of 176.21 ns and an average power consumption of2.9665μW. The 7T1 M SRAM cell has an energy-delay-area product value of 1.61, which is the lowest among the memristive SRAM cells available in the literature.展开更多
Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices.In this article,the performances of T1O_2 and TaO_2nonvolatile me...Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices.In this article,the performances of T1O_2 and TaO_2nonvolatile memristive devices were compared and the factors that make TaO_2 memristive devices better than T1O_2 memristive devices were studied.TaO_2 memristive devices have shown better endurance performances（10~8times more switching cycles） and faster switching speed（5 times） than TiO_2 memristive devices.Electroforming of TaO_2 memristive devices requires ~ 4.5 times less energy than TiO_2 memristive devices of a similar size.The retention period of TaO_2 memristive devices is expected to exceed 10 years with sufficient experimental evidence.In addition to comparing device performances,this article also explains the differences in physical device structure,switching mechanism,and resistance switching performances of TiO_2 and TaO_2 memristive devices.This article summarizes the reasons that give TaO_2 memristive devices the advantage over TiO_2 memristive devices,in terms of electroformation,switching speed,and endurance.展开更多
文摘In this work, a novel memristive SRAM cell is designed using seven transistors and one memristor（7T1M）. In this 7T1 M SRAM cell, the non-volatile functionality is achieved by adding a single memristor and a transistor to the design of a volatile SRAM cell. The designing of the 7T1 M SRAM cell also introduces VCTRL which allows bidirectional current flowing through the memristor, instead of relying on complementary input sources which would require more design components. In this article, memristive SRAM cells available from the literature are simulated using the same simulation environment for a fair comparison. Simulations show that the7T1 M SRAM cell has the least power consumption against other memristive SRAM cells in the literature. The7T1 M SRAM cell operates with an average switching speed of 176.21 ns and an average power consumption of2.9665μW. The 7T1 M SRAM cell has an energy-delay-area product value of 1.61, which is the lowest among the memristive SRAM cells available in the literature.
文摘Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices.In this article,the performances of T1O_2 and TaO_2nonvolatile memristive devices were compared and the factors that make TaO_2 memristive devices better than T1O_2 memristive devices were studied.TaO_2 memristive devices have shown better endurance performances（10~8times more switching cycles） and faster switching speed（5 times） than TiO_2 memristive devices.Electroforming of TaO_2 memristive devices requires ~ 4.5 times less energy than TiO_2 memristive devices of a similar size.The retention period of TaO_2 memristive devices is expected to exceed 10 years with sufficient experimental evidence.In addition to comparing device performances,this article also explains the differences in physical device structure,switching mechanism,and resistance switching performances of TiO_2 and TaO_2 memristive devices.This article summarizes the reasons that give TaO_2 memristive devices the advantage over TiO_2 memristive devices,in terms of electroformation,switching speed,and endurance.
