This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser（VCSEL）, discussing the structural design, mode control and the related data transmission perform...This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser（VCSEL）, discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAsmultiple quantum well （MQW） was used to increase the differential gain and photon density in VCSEL. The multiple oxidelayers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode （SM） VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.展开更多
Full-color displays based on micro light-emitting diodes(μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring(NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tun...Full-color displays based on micro light-emitting diodes(μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring(NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green to blue through strain relaxation. An Al_2O_3 layer was deposited on the sidewall of NR-μLEDs,which improved the photoluminescence intensity by 143.7%. Coupling with the exposed multiple quantum wells through nonradiative resonant energy transfer, red quantum dots were printed to NR-μLEDs for a full-color display. To further improve the color purity of the red light, a distributed Bragg reflector is developed to reuse the excitation light.展开更多
Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs ...Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs were fabricated on large(4 in.)patterned sapphire substrates by orientation-controlled epitaxy.The semipolarμ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7%efficiency droop under 200 A∕cm2injected current density,indicating significant amelioration of the quantum-confined Stark effect.Because of the semipolarμ-LEDs’emission-wavelength stability,the RGB pixel showed little color shift with current density and achieved a wide color gamut(114.4%NTSC space and 85.4%Rec.2020).展开更多
文摘This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser（VCSEL）, discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAsmultiple quantum well （MQW） was used to increase the differential gain and photon density in VCSEL. The multiple oxidelayers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode （SM） VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.
基金Ministry of Science and Technology,Taiwan,China(MOST)(107-2221-E-009-113-MY3,105-2221-E-009-112-MY3)Strait Postdoctoral Foundation of Fujian Province of China
文摘Full-color displays based on micro light-emitting diodes(μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring(NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green to blue through strain relaxation. An Al_2O_3 layer was deposited on the sidewall of NR-μLEDs,which improved the photoluminescence intensity by 143.7%. Coupling with the exposed multiple quantum wells through nonradiative resonant energy transfer, red quantum dots were printed to NR-μLEDs for a full-color display. To further improve the color purity of the red light, a distributed Bragg reflector is developed to reuse the excitation light.
基金Ministry of Science and Technology,Taiwan,China(107-2221-E-009-113-MY3,108-2221-E-009-113-MY3)National Natural Science Foundation of China(11904302)+1 种基金Hsinchu Science Park Bureau,Ministry of Science and Technology,Taiwan,China(108A08B)Major Science and Technology Project of Xiamen,China(3502Z20191015)。
文摘Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs were fabricated on large(4 in.)patterned sapphire substrates by orientation-controlled epitaxy.The semipolarμ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7%efficiency droop under 200 A∕cm2injected current density,indicating significant amelioration of the quantum-confined Stark effect.Because of the semipolarμ-LEDs’emission-wavelength stability,the RGB pixel showed little color shift with current density and achieved a wide color gamut(114.4%NTSC space and 85.4%Rec.2020).
