This paper presents a compact two-dimensional analytical device model of surface potential,in addition to electric field of triple-material double-gate(TMDG)tunnel FET.The TMDG TFET device model is developed using a p...This paper presents a compact two-dimensional analytical device model of surface potential,in addition to electric field of triple-material double-gate(TMDG)tunnel FET.The TMDG TFET device model is developed using a parabolic approximation method in the channel depletion space and a boundary state of affairs across the drain and source.The TMDG TFET device is used to analyze the electrical performance of the TMDG structure in terms of changes in potential voltage,lateral and vertical electric field.Because the TMDG TFET has a simple compact structure,the surface potential is computationally efficient and,therefore,may be utilized to analyze and characterize the gate-controlled devices.Furthermore,using Kane's model,the current across the drain can be modeled.The graph results achieved from this device model are close to the data collected from the technology computer aided design(TCAD)simulation.展开更多
A physics-based analytical model for symmetrically biased double-gate（DG） MOSFETs considering quantum mechanical effects is proposed.Schrodinger＇s and Poisson＇s equations are solved simultaneously using a variatio...A physics-based analytical model for symmetrically biased double-gate（DG） MOSFETs considering quantum mechanical effects is proposed.Schrodinger＇s and Poisson＇s equations are solved simultaneously using a variational approach.Solving the Poisson and Schrodinger equations simultaneously reveals quantum mechanical effects（QME） that influence the performance of DG MOSFETs.The inversion charge and electrical potential distributions perpendicular to the channel are expressed in closed forms.We systematically evaluated and analyzed the potentials and inversion charges,taking QME into consideration,in Si based double gate devices.The effect of silicon thickness variation in inversion-layer charge and potentials are quantitatively defined.The analytical solutions provide good physical insight into the quantization caused by quantum confinement under various gate biases.展开更多
Quantum effects are predominant in tri-gate MOSFETs, so a model should be developed. For the first time, this paper presents the analytical model for quantization effects of thin film silicon tri-gate MOSFETs by using...Quantum effects are predominant in tri-gate MOSFETs, so a model should be developed. For the first time, this paper presents the analytical model for quantization effects of thin film silicon tri-gate MOSFETs by using variational approach. An analytical expression of the inversion charge distribution function（ICDF） or wave function for the tri-gate MOSFETs has been obtained. This obtained ICDF is used to calculate the important device parameters, such as the inversion charge centroid and inversion charge density. The results are validated against with the simulation data.展开更多
An analytical model for surrounding gate metal-oxide-semiconductor field effect transistors （MOS- FETs） considering quantum effects is presented. To achieve this goal, we have used a variational approach for solving...An analytical model for surrounding gate metal-oxide-semiconductor field effect transistors （MOS- FETs） considering quantum effects is presented. To achieve this goal, we have used a variational approach for solving the Poisson and Schrodinger equations. This model is developed to provide an analytical expression for the inversion charge distribution function for all regions of the device operation. This expression is used to calculate the other important parameters like the inversion charge centroid, threshold voltage and inversion charge density. The calculated expressions for the above parameters are simple and accurate. The validity of this model was checked for the devices with different device dimensions and bias voltages. The calculated results are compared with the simulation results and they show good agreement.展开更多
基金supported by Women Scientist Scheme-A, Department of Science and Technology, New Delhi, Government of India, under the Grant SR/WOS-A/ET-5/2017
文摘This paper presents a compact two-dimensional analytical device model of surface potential,in addition to electric field of triple-material double-gate(TMDG)tunnel FET.The TMDG TFET device model is developed using a parabolic approximation method in the channel depletion space and a boundary state of affairs across the drain and source.The TMDG TFET device is used to analyze the electrical performance of the TMDG structure in terms of changes in potential voltage,lateral and vertical electric field.Because the TMDG TFET has a simple compact structure,the surface potential is computationally efficient and,therefore,may be utilized to analyze and characterize the gate-controlled devices.Furthermore,using Kane's model,the current across the drain can be modeled.The graph results achieved from this device model are close to the data collected from the technology computer aided design(TCAD)simulation.
文摘A physics-based analytical model for symmetrically biased double-gate（DG） MOSFETs considering quantum mechanical effects is proposed.Schrodinger＇s and Poisson＇s equations are solved simultaneously using a variational approach.Solving the Poisson and Schrodinger equations simultaneously reveals quantum mechanical effects（QME） that influence the performance of DG MOSFETs.The inversion charge and electrical potential distributions perpendicular to the channel are expressed in closed forms.We systematically evaluated and analyzed the potentials and inversion charges,taking QME into consideration,in Si based double gate devices.The effect of silicon thickness variation in inversion-layer charge and potentials are quantitatively defined.The analytical solutions provide good physical insight into the quantization caused by quantum confinement under various gate biases.
基金The authors are gratefu l for the financial support by W OS—A Scheme,Department of Science and Technology,New Delhi,Govern ment of India through the grant SRJWOS-A/ET-41/2011.
文摘Quantum effects are predominant in tri-gate MOSFETs, so a model should be developed. For the first time, this paper presents the analytical model for quantization effects of thin film silicon tri-gate MOSFETs by using variational approach. An analytical expression of the inversion charge distribution function（ICDF） or wave function for the tri-gate MOSFETs has been obtained. This obtained ICDF is used to calculate the important device parameters, such as the inversion charge centroid and inversion charge density. The results are validated against with the simulation data.
基金the financial support by WOS-A Scheme,Department of Science and Technology,New Delhi, Government of India through the grant SR/WOS-A/ET41/2011
文摘An analytical model for surrounding gate metal-oxide-semiconductor field effect transistors （MOS- FETs） considering quantum effects is presented. To achieve this goal, we have used a variational approach for solving the Poisson and Schrodinger equations. This model is developed to provide an analytical expression for the inversion charge distribution function for all regions of the device operation. This expression is used to calculate the other important parameters like the inversion charge centroid, threshold voltage and inversion charge density. The calculated expressions for the above parameters are simple and accurate. The validity of this model was checked for the devices with different device dimensions and bias voltages. The calculated results are compared with the simulation results and they show good agreement.
