Re-deposition is a non-volatile etching by-product in reactive ion etching systems that is well known to cause dirt on etching work.In this study,we propose a novel etching method called the polymer-rich re-deposition...Re-deposition is a non-volatile etching by-product in reactive ion etching systems that is well known to cause dirt on etching work.In this study,we propose a novel etching method called the polymer-rich re-deposition technique,used particularly for improving the etched sidewall where the re-deposition is able to accumulate.This technique works by allowing the accumulated re-deposition on the etched sidewall to have a higher polymer species than the new compounds in the non-volatile etching by-product.The polymer-rich re-deposition is easy to remove along with the photo-resist mask residual at the photo-resist strip step using an isopropyl alcohol-based solution.The traditional,additional cleaning process step used to remove the re-deposition material is not required anymore,so this reduces the overall processing time.The technique is demonstrated on an Al_(2)O_(3)-TiC substrate by C4F8 plasma,and the EDX spectrum confirms that the polymer re-deposition has C and F atoms as the dominant atoms,suggesting that it is a C–F polymer re-deposition.展开更多
InN film was grown on 4H-SiC （0001） substrate by RF plasma-assisted molecular beam epitaxy （RF- MBE）. Prior to the growth of InN film, an InN buffer layer with a thickness of ～5.5 nm was grown on the substrate. S...InN film was grown on 4H-SiC （0001） substrate by RF plasma-assisted molecular beam epitaxy （RF- MBE）. Prior to the growth of InN film, an InN buffer layer with a thickness of ～5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy （TEM）. The results show that a high density of line contrasts, parallel to the growth direction （c-axis）, was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors g = 1120 and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent rnisoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains.展开更多
基金Supported by the Industry/University Cooperative Research Center in Data Storage Technology and Applications,King Mongkut’s Institute of Technology Ladkrabang and the National Electronics and Computer Technology Center,the National Science and Technology Development Agencythe Commission of Higher Education under the National Research University(NRU)Project.
文摘Re-deposition is a non-volatile etching by-product in reactive ion etching systems that is well known to cause dirt on etching work.In this study,we propose a novel etching method called the polymer-rich re-deposition technique,used particularly for improving the etched sidewall where the re-deposition is able to accumulate.This technique works by allowing the accumulated re-deposition on the etched sidewall to have a higher polymer species than the new compounds in the non-volatile etching by-product.The polymer-rich re-deposition is easy to remove along with the photo-resist mask residual at the photo-resist strip step using an isopropyl alcohol-based solution.The traditional,additional cleaning process step used to remove the re-deposition material is not required anymore,so this reduces the overall processing time.The technique is demonstrated on an Al_(2)O_(3)-TiC substrate by C4F8 plasma,and the EDX spectrum confirms that the polymer re-deposition has C and F atoms as the dominant atoms,suggesting that it is a C–F polymer re-deposition.
基金supported by the Thailand Center of Excellence in Physics(Th EP)the King Mongkut’s University of Technology Thonburi under The National Research University Project+2 种基金supported by the National Research Council of Thailand(NRCT)the Thai Government Stimulus Package 2(TKK2555)the Project for Establishment of Comprehensive Center for Innovative Food,Health Products and Agriculture
文摘InN film was grown on 4H-SiC （0001） substrate by RF plasma-assisted molecular beam epitaxy （RF- MBE）. Prior to the growth of InN film, an InN buffer layer with a thickness of ～5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy （TEM）. The results show that a high density of line contrasts, parallel to the growth direction （c-axis）, was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors g = 1120 and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent rnisoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains.
