本文报道了在SIMOX(Separation by IMPlanted Oxygen)薄膜材料上制备钛硅化物的研究结果。研究表明,不同厚度的SIMOX薄膜材料上都形成了均匀的TiSi_2,其薄层电阻为4.0—4.5Ω/□,上层Si中的载流子峰值浓度达2×10^(20)/cm^3,获得了...本文报道了在SIMOX(Separation by IMPlanted Oxygen)薄膜材料上制备钛硅化物的研究结果。研究表明,不同厚度的SIMOX薄膜材料上都形成了均匀的TiSi_2,其薄层电阻为4.0—4.5Ω/□,上层Si中的载流子峰值浓度达2×10^(20)/cm^3,获得了一种TiSi_2/n^+-Si/SiO_2/Si的多层结构。形成TiSi_2后,As原子在上层Si中的分布与SIMOX薄膜厚度有关,当上层Si很薄时,As原子在上层Si与SiO_2埋层的界面上的堆积是明显的。展开更多
本文报道了借助高剂量离子注入、高温退火等技术获得不同类型SOI(Silicon on Insulator)材料的形成过程及其多层结构。以离子背散射和沟道技术、Auger能谱、透射电子显微镜、扩展电阻测试以及红外透射和反射等分析方法对这些SOI结构进...本文报道了借助高剂量离子注入、高温退火等技术获得不同类型SOI(Silicon on Insulator)材料的形成过程及其多层结构。以离子背散射和沟道技术、Auger能谱、透射电子显微镜、扩展电阻测试以及红外透射和反射等分析方法对这些SOI结构进行表征。比较了注O^+和注N^+两种SOI材料的优缺点。研究表明,高质量的SOI材料能够通过离子束合成技术获得。展开更多
The direct growth of GaAs by molecular-beam epitaxy on separation-by-implanted-oxygen substrates is demonstrated.Cross-sectional trajismission electron microscopyt Rutherford backsca,ttering and channeling techniques ...The direct growth of GaAs by molecular-beam epitaxy on separation-by-implanted-oxygen substrates is demonstrated.Cross-sectional trajismission electron microscopyt Rutherford backsca,ttering and channeling techniques have been employed to characterize these layers.Microtwins and threading dislocation are the predominant defects in the layers.Most of the misfit dislocation are conGned within the Ga.As and Si interface region by forming a type of edge dislocation.展开更多
本文研究了利用大剂量的N^+和O^+注入单晶硅并经高温热退火以后形成的SOI(silicon on Insulator)新材料的形成过程及其多层结构.对SOI结构进行了红外吸收谱和反射谱的测量,通过对红外反射干涉谱的理论分析和计算机模拟,得到了SOI结构的...本文研究了利用大剂量的N^+和O^+注入单晶硅并经高温热退火以后形成的SOI(silicon on Insulator)新材料的形成过程及其多层结构.对SOI结构进行了红外吸收谱和反射谱的测量,通过对红外反射干涉谱的理论分析和计算机模拟,得到了SOI结构的折射率分布.研究表明,利用离子束合成技术可以获得高质量的SOI材料,红外吸收谱和反射谱的测量分析是一种有效的、非破坏性的检测方法.展开更多
报道了利用100Kev高剂量N^+在不同的温度条件下注入C膜合成新型超硬材料β-C_3N_4的新结果.对这种新材料进行了X射线光电子能谱,Fourier变换红外光谱、Raman光谱、剖面透射电子显微镜、Rutherford背散射谱、X射线衍射及Vickers显微硬度...报道了利用100Kev高剂量N^+在不同的温度条件下注入C膜合成新型超硬材料β-C_3N_4的新结果.对这种新材料进行了X射线光电子能谱,Fourier变换红外光谱、Raman光谱、剖面透射电子显微镜、Rutherford背散射谱、X射线衍射及Vickers显微硬度等测量.结果表明利用100Kev高剂量N^+注入C膜成功地合成了埋层氮化碳CN_(?)膜中C≡N共价键的形成导致膜的硬度明显提高.最后利用Implantation of Reactive Ions into Silicon (IRIS)计算程序模拟了相同条件的N^+注入C膜合成埋层β-C_3N_4的形成过程,结果与实验符合较好.展开更多
The formation process and multi-layer structures of silicon-on-insulator (SOI) materialsformed by high-dose N^+ and O^+ implantation and high-temperature annealing have been inves-tigated. Infrared (IR) absorption and...The formation process and multi-layer structures of silicon-on-insulator (SOI) materialsformed by high-dose N^+ and O^+ implantation and high-temperature annealing have been inves-tigated. Infrared (IR) absorption and reflection spectra have been measured for SOI struc-tures. From detailed theoretical analysis and computer simulation of the IR reflection interfer-ence spectra, refractive index profiles of SOI structures were obtained. It has been provedthat the high-quality SOI materials could be produced with ion beam techniques. The resultsof this study also indicate that the IR absorption and reflection spectroscopic measurementare nondestructive and effective methods to examine the quality of SOI materials.展开更多
文摘本文报道了在SIMOX(Separation by IMPlanted Oxygen)薄膜材料上制备钛硅化物的研究结果。研究表明,不同厚度的SIMOX薄膜材料上都形成了均匀的TiSi_2,其薄层电阻为4.0—4.5Ω/□,上层Si中的载流子峰值浓度达2×10^(20)/cm^3,获得了一种TiSi_2/n^+-Si/SiO_2/Si的多层结构。形成TiSi_2后,As原子在上层Si中的分布与SIMOX薄膜厚度有关,当上层Si很薄时,As原子在上层Si与SiO_2埋层的界面上的堆积是明显的。
文摘本文报道了借助高剂量离子注入、高温退火等技术获得不同类型SOI(Silicon on Insulator)材料的形成过程及其多层结构。以离子背散射和沟道技术、Auger能谱、透射电子显微镜、扩展电阻测试以及红外透射和反射等分析方法对这些SOI结构进行表征。比较了注O^+和注N^+两种SOI材料的优缺点。研究表明,高质量的SOI材料能够通过离子束合成技术获得。
文摘The direct growth of GaAs by molecular-beam epitaxy on separation-by-implanted-oxygen substrates is demonstrated.Cross-sectional trajismission electron microscopyt Rutherford backsca,ttering and channeling techniques have been employed to characterize these layers.Microtwins and threading dislocation are the predominant defects in the layers.Most of the misfit dislocation are conGned within the Ga.As and Si interface region by forming a type of edge dislocation.
文摘本文研究了利用大剂量的N^+和O^+注入单晶硅并经高温热退火以后形成的SOI(silicon on Insulator)新材料的形成过程及其多层结构.对SOI结构进行了红外吸收谱和反射谱的测量,通过对红外反射干涉谱的理论分析和计算机模拟,得到了SOI结构的折射率分布.研究表明,利用离子束合成技术可以获得高质量的SOI材料,红外吸收谱和反射谱的测量分析是一种有效的、非破坏性的检测方法.
文摘报道了利用100Kev高剂量N^+在不同的温度条件下注入C膜合成新型超硬材料β-C_3N_4的新结果.对这种新材料进行了X射线光电子能谱,Fourier变换红外光谱、Raman光谱、剖面透射电子显微镜、Rutherford背散射谱、X射线衍射及Vickers显微硬度等测量.结果表明利用100Kev高剂量N^+注入C膜成功地合成了埋层氮化碳CN_(?)膜中C≡N共价键的形成导致膜的硬度明显提高.最后利用Implantation of Reactive Ions into Silicon (IRIS)计算程序模拟了相同条件的N^+注入C膜合成埋层β-C_3N_4的形成过程,结果与实验符合较好.
文摘The formation process and multi-layer structures of silicon-on-insulator (SOI) materialsformed by high-dose N^+ and O^+ implantation and high-temperature annealing have been inves-tigated. Infrared (IR) absorption and reflection spectra have been measured for SOI struc-tures. From detailed theoretical analysis and computer simulation of the IR reflection interfer-ence spectra, refractive index profiles of SOI structures were obtained. It has been provedthat the high-quality SOI materials could be produced with ion beam techniques. The resultsof this study also indicate that the IR absorption and reflection spectroscopic measurementare nondestructive and effective methods to examine the quality of SOI materials.
