A generic numerical model of a long-wavelength Avalanche Photodiode （APD） based on narrow bandgap semiconductor InAsSb on InAs substrate is reported for the first time. This model has been applied for theoretical ch...A generic numerical model of a long-wavelength Avalanche Photodiode （APD） based on narrow bandgap semiconductor InAsSb on InAs substrate is reported for the first time. This model has been applied for theoretical characterization of a proposed N^＋ InAS/P-InAsSb avalanche photodiode structure for possible application in 2-5 μm wavelength region. The parameters such as gain, excess noise factor and their trade-off with variation of doping concentration and bias voltage have been estimated for the APD taking into account history-dependent theory of avalanche multiplication process, The LWIR APD is expected to fred application in optical gas sensor and in future generation of optical communication system.展开更多
文摘A generic numerical model of a long-wavelength Avalanche Photodiode （APD） based on narrow bandgap semiconductor InAsSb on InAs substrate is reported for the first time. This model has been applied for theoretical characterization of a proposed N^＋ InAS/P-InAsSb avalanche photodiode structure for possible application in 2-5 μm wavelength region. The parameters such as gain, excess noise factor and their trade-off with variation of doping concentration and bias voltage have been estimated for the APD taking into account history-dependent theory of avalanche multiplication process, The LWIR APD is expected to fred application in optical gas sensor and in future generation of optical communication system.
