Using the hydrodynamic model of semiconductor plasmas, we perform an analytical investigation of stimulated Raman scattering （SITS） of an electromagnetic pump wave in a transversely magnetized weakly polar semicon- ...Using the hydrodynamic model of semiconductor plasmas, we perform an analytical investigation of stimulated Raman scattering （SITS） of an electromagnetic pump wave in a transversely magnetized weakly polar semicon- ductor arising from electron-density perturbations and molecular vibrations of the medium both produced at the longitudinal optical phonon frequency. Assuming that the origin of SItS lies in the third-order susceptibility of the medium, we investigate the growth rate of Stokes mode. The dependence of stimulated Raman gain on the external dc magnetic field strength and free carrier concentration is reported. The possibility of the occurrence of optical phase conjugation via SItS is also studied. The steady-state Raman gain is found to be greatly enhanced by the presence of the strong external dc magnetic field.展开更多
Using electromagnetic treatment, an expression of effective nonlinear optical susceptibility χe [= χe^（2） ＋ χe^（3） E] is obtained for Ⅲ-Ⅴ semiconducting crystals in an applied transverse dc magnetic fieM und...Using electromagnetic treatment, an expression of effective nonlinear optical susceptibility χe [= χe^（2） ＋ χe^（3） E] is obtained for Ⅲ-Ⅴ semiconducting crystals in an applied transverse dc magnetic fieM under off-resonant transition regime. The origin of nonlinear interaction lies in nonlinear polarization arising from the crystal properties such as piezoelectricity and electrostriction. Numerical estimates have been made by a representative n-InSb crystal at 77K duly irradiated by a pulsed 10.6-μm CO2 laser under off-resonant transition regime. Efforts are dedicated to optimizing doping level and externally applied dc magnetic field to achieve maximum χe^（2） and χ3^（3）. The results are found to be in good agreement with the available literature. The analysis shows that χe^（2） and χe^（3） can be significantly enhanced in doped Ⅲ-Ⅴ semiconductors by the proper selection of doping concentration and dc magnetic field, which confirms its potential as a candidate material for the fabrication of nonlinear optical devices.展开更多
Neodymium （binary oxide） powders are synthesized by a solgel technique. Prepared powders are heat treated under different temperature/or different time duration and obtained nanostructure of Nd. Metal particle have ...Neodymium （binary oxide） powders are synthesized by a solgel technique. Prepared powders are heat treated under different temperature/or different time duration and obtained nanostructure of Nd. Metal particle have diameters in the range 7.8-1.6 nm. It is found that the heat treatment plays an important role to produce different structure of Nd-doped silica matrix. The peak position shifts to lower angle as the size of the nano metal oxide particles size increases.展开更多
文摘Using the hydrodynamic model of semiconductor plasmas, we perform an analytical investigation of stimulated Raman scattering （SITS） of an electromagnetic pump wave in a transversely magnetized weakly polar semicon- ductor arising from electron-density perturbations and molecular vibrations of the medium both produced at the longitudinal optical phonon frequency. Assuming that the origin of SItS lies in the third-order susceptibility of the medium, we investigate the growth rate of Stokes mode. The dependence of stimulated Raman gain on the external dc magnetic field strength and free carrier concentration is reported. The possibility of the occurrence of optical phase conjugation via SItS is also studied. The steady-state Raman gain is found to be greatly enhanced by the presence of the strong external dc magnetic field.
文摘Using electromagnetic treatment, an expression of effective nonlinear optical susceptibility χe [= χe^（2） ＋ χe^（3） E] is obtained for Ⅲ-Ⅴ semiconducting crystals in an applied transverse dc magnetic fieM under off-resonant transition regime. The origin of nonlinear interaction lies in nonlinear polarization arising from the crystal properties such as piezoelectricity and electrostriction. Numerical estimates have been made by a representative n-InSb crystal at 77K duly irradiated by a pulsed 10.6-μm CO2 laser under off-resonant transition regime. Efforts are dedicated to optimizing doping level and externally applied dc magnetic field to achieve maximum χe^（2） and χ3^（3）. The results are found to be in good agreement with the available literature. The analysis shows that χe^（2） and χe^（3） can be significantly enhanced in doped Ⅲ-Ⅴ semiconductors by the proper selection of doping concentration and dc magnetic field, which confirms its potential as a candidate material for the fabrication of nonlinear optical devices.
文摘Neodymium （binary oxide） powders are synthesized by a solgel technique. Prepared powders are heat treated under different temperature/or different time duration and obtained nanostructure of Nd. Metal particle have diameters in the range 7.8-1.6 nm. It is found that the heat treatment plays an important role to produce different structure of Nd-doped silica matrix. The peak position shifts to lower angle as the size of the nano metal oxide particles size increases.
