In this study,we present an in-depth exploration of charge transport phenomena and variable photo-switching characteristics in a novel double-perovskite-based three-terminal device.The Cs_(2)AgBiBr_(6) thin film(TF)wa...In this study,we present an in-depth exploration of charge transport phenomena and variable photo-switching characteristics in a novel double-perovskite-based three-terminal device.The Cs_(2)AgBiBr_(6) thin film(TF)was synthesized through a three-step thermal evaporation process followed by precise open-air annealing,ensuring superior film quality as confirmed by structural and morphological characterizations.Photoluminescence spectroscopy revealed distinct emissions at 2.28 and 2.07 eV,indicative of both direct and indirect electronic transitions.Our device exhibited space-charge limited current(SCLC)behaviour beyond 0.35 V,aligning with the relationship Current(I)∝Voltage(V)^(m),where the exponent m transitioned from≤1 to>1.Detailed analysis of Schottky parameters within the trap-filled limit(TFL)regime was conducted,accounting for variations in temperature and optical power.Significantly,the self-powered photodetector demonstrated outstanding performance under illumination.The sensitivity of the device was finely tunable via the applied bias voltages at the third terminal.Notably,an optimal bias voltage of±100μV yielded maximum responsivity(R)of 0.48 A/W and an impressive detectivity(D*)of 1.07×10^(9) Jones,highlighting the potential of this double-perovskite-based device for advanced optoelectronic applications.展开更多
基金Research Board(SERB),a statutory entity of the Department of Science and Technology(DST),Ministry of Science and Technology,India(File No:CRG/2021/000255)provided financial support to one of the authors.
文摘In this study,we present an in-depth exploration of charge transport phenomena and variable photo-switching characteristics in a novel double-perovskite-based three-terminal device.The Cs_(2)AgBiBr_(6) thin film(TF)was synthesized through a three-step thermal evaporation process followed by precise open-air annealing,ensuring superior film quality as confirmed by structural and morphological characterizations.Photoluminescence spectroscopy revealed distinct emissions at 2.28 and 2.07 eV,indicative of both direct and indirect electronic transitions.Our device exhibited space-charge limited current(SCLC)behaviour beyond 0.35 V,aligning with the relationship Current(I)∝Voltage(V)^(m),where the exponent m transitioned from≤1 to>1.Detailed analysis of Schottky parameters within the trap-filled limit(TFL)regime was conducted,accounting for variations in temperature and optical power.Significantly,the self-powered photodetector demonstrated outstanding performance under illumination.The sensitivity of the device was finely tunable via the applied bias voltages at the third terminal.Notably,an optimal bias voltage of±100μV yielded maximum responsivity(R)of 0.48 A/W and an impressive detectivity(D*)of 1.07×10^(9) Jones,highlighting the potential of this double-perovskite-based device for advanced optoelectronic applications.
