Ultraviolet(UV)-laser induced quantum well intermixing(QWI) technique can generate large multiple bandgap blue shifts in III-V quantum well semiconductor heterostructure.The application of the UV-laser QWI technique t...Ultraviolet(UV)-laser induced quantum well intermixing(QWI) technique can generate large multiple bandgap blue shifts in III-V quantum well semiconductor heterostructure.The application of the UV-laser QWI technique to fabricate multi-bandgap photonic devices based on compressively strained InGaAsP/InP quantum well laser microstructure is reported.We show that under certain UV-laser irradiation conditions,the photoluminescence(PL) intensity can be enhanced,and the full width at half maximum(FWHM) linewidth can be reduced.The blue shift of bandgap can reach as large as 145 nm,while the PL intensity is about 51% higher than that of the as-grown material.Experimental results of post growth wafer level processing for the fabrication of bandgap-shifted waveguides and laser diodes are presented.展开更多
High electron mobility transistor(HEMT)based on gallium nitride(GaN)is one of the most promising candidates for the future generation of high frequencies and high-power electronic applications.This research work aims ...High electron mobility transistor(HEMT)based on gallium nitride(GaN)is one of the most promising candidates for the future generation of high frequencies and high-power electronic applications.This research work aims at designing and characterization of enhancement-mode or normally-off GaN HEMT.The impact of variations in gate length,mole concentration,barrier variations and other important design parameters on the performance of normally-off GaN HEMT is thoroughly investigated.An increase in the gate length causes a decrease in the drain current and transconductance,while an increase in drain current and transconductance can be achieved by increasing the concentration of aluminium(Al).For Al mole fractions of 23%,25%,and 27%,within Al gallium nitride(AlGaN)barrier,the GaN HEMT devices provide a maximum drain current of 347,408 and 474 mA/μm and a transconductance of 19,20.2,21.5 mS/μm,respectively.Whereas,for Al mole fraction of 10%and 15%,within AlGaN buffer,these devices are observed to provide a drain current of 329 and 283 mA/μm,respectively.Furthermore,for a gate length of 2.4,3.4,and 4.4μm,the device is observed to exhibit a maximum drain current of 272,235,and 221 mA/μm and the transconductance of 16.2,14,and 12.3 mS/μm,respectively.It is established that a maximum drain current of 997 mA/μm can be achieved with an Al concentration of 23%,and the device exhibits a steady drain current with enhanced transconductance.These observations demonstrate tremendous potential for two-dimensional electron gas(2DEG)for securing of the normally-off mode operation.A suitable setting of gate length and other design parameters is critical in preserving the normally-off mode operation while also enhancing the critical performance parameters at the same time.Due to the normallyon depletion-mode nature of GaN HEMT,it is usually not considered as suitable for high power levels,frequencies,and temperature.In such settings,a negative bias is required to enter the blocking condition;however,in the before-mentioned normally-off devices,the negative bias can be avoided and the channel can be depleted without applying a negative bias.展开更多
基金supported by the Ministry of Science and Technology of China under International Collaborative Research(No.2010DFA61370)the National High-Tech R&D Program of China(No.2013AA014401)the Natural Science Foundation of Zhejiang Province(No.Z1110276)
文摘Ultraviolet(UV)-laser induced quantum well intermixing(QWI) technique can generate large multiple bandgap blue shifts in III-V quantum well semiconductor heterostructure.The application of the UV-laser QWI technique to fabricate multi-bandgap photonic devices based on compressively strained InGaAsP/InP quantum well laser microstructure is reported.We show that under certain UV-laser irradiation conditions,the photoluminescence(PL) intensity can be enhanced,and the full width at half maximum(FWHM) linewidth can be reduced.The blue shift of bandgap can reach as large as 145 nm,while the PL intensity is about 51% higher than that of the as-grown material.Experimental results of post growth wafer level processing for the fabrication of bandgap-shifted waveguides and laser diodes are presented.
文摘High electron mobility transistor(HEMT)based on gallium nitride(GaN)is one of the most promising candidates for the future generation of high frequencies and high-power electronic applications.This research work aims at designing and characterization of enhancement-mode or normally-off GaN HEMT.The impact of variations in gate length,mole concentration,barrier variations and other important design parameters on the performance of normally-off GaN HEMT is thoroughly investigated.An increase in the gate length causes a decrease in the drain current and transconductance,while an increase in drain current and transconductance can be achieved by increasing the concentration of aluminium(Al).For Al mole fractions of 23%,25%,and 27%,within Al gallium nitride(AlGaN)barrier,the GaN HEMT devices provide a maximum drain current of 347,408 and 474 mA/μm and a transconductance of 19,20.2,21.5 mS/μm,respectively.Whereas,for Al mole fraction of 10%and 15%,within AlGaN buffer,these devices are observed to provide a drain current of 329 and 283 mA/μm,respectively.Furthermore,for a gate length of 2.4,3.4,and 4.4μm,the device is observed to exhibit a maximum drain current of 272,235,and 221 mA/μm and the transconductance of 16.2,14,and 12.3 mS/μm,respectively.It is established that a maximum drain current of 997 mA/μm can be achieved with an Al concentration of 23%,and the device exhibits a steady drain current with enhanced transconductance.These observations demonstrate tremendous potential for two-dimensional electron gas(2DEG)for securing of the normally-off mode operation.A suitable setting of gate length and other design parameters is critical in preserving the normally-off mode operation while also enhancing the critical performance parameters at the same time.Due to the normallyon depletion-mode nature of GaN HEMT,it is usually not considered as suitable for high power levels,frequencies,and temperature.In such settings,a negative bias is required to enter the blocking condition;however,in the before-mentioned normally-off devices,the negative bias can be avoided and the channel can be depleted without applying a negative bias.
