We report a systematic study on magnetotransport properties of the single crystal of cadmium(Cd). When the applied magnetic field B is perpendicular to the current I, the resistivities for both directions(I ‖ a, I ‖...We report a systematic study on magnetotransport properties of the single crystal of cadmium(Cd). When the applied magnetic field B is perpendicular to the current I, the resistivities for both directions(I ‖ a, I ‖ c) show field induced metal-to-insulator-like transitions. The isothermal magnetoresistance(MR) at low temperatures increases approximately as the square of the magnetic field without any sign of saturation, and reaches up to 1140000% and 58000% at T = 2 K and B = 9 T for I ‖ a and I ‖ c, respectively. As the magnetic field rotates to parallel to the current, no sign of negative MR is observed for I ‖ a, while an obvious negative MR appears up to-70% at 2 K and 9 T for the current flowing along the c-axis, and the negative longitudinal MR shows a strong dependence of the electrode position on the single crystal. These results suggest that the negative longitudinal MR is caused by the dislocations formed in the process of crystal growing along the c-axis. Further studies are needed to clarify this point.展开更多
We report the transport properties of the CaAs_3 single crystal, which has been predicted to be a candidate for topological nodal-line semimetals. At ambient pressure, CaAs_3 exhibits semiconducting behavior with a sm...We report the transport properties of the CaAs_3 single crystal, which has been predicted to be a candidate for topological nodal-line semimetals. At ambient pressure, CaAs_3 exhibits semiconducting behavior with a small gap, while in some crystals containing tiny defects or impurities, a large "hump" in the resistivity is observed around 230 K. By applying hydrostatic pressure, the samples appear to a tendency towards metallic behavior, but not fully metallized up to 2 GPa.Further high pressure studies are needed to explore the topological characteristics for CaAs_3.展开更多
Devices of electric double-layer transistors （EDLTs） with ionic liquid have been employed as an effective way to dope carriers over a wide range. However, the induced electronic states can hardly survive in the mate...Devices of electric double-layer transistors （EDLTs） with ionic liquid have been employed as an effective way to dope carriers over a wide range. However, the induced electronic states can hardly survive in the materials after releasing the gate voltage VG at temperatures higher than the melting point of the selected ionic liquid. Here we show that a permanent superconductivity with transition temperature Tc of 24 and 15K is realized hi single crystals and polycrystalline samples of HfNCI and ZrNCI upon applying proper VG＇s at different temperatures. Reversible change between insulating and superconducting states can be obtained by applying positive and negative VG at low temperature such as 220K, whereas VG ＇s applied at 250K induce the irreversible superconducting transition. The upper critical field He2 of the superconducting states obtained at different gating temperatures shows similar temperature dependence. We propose a reasonable scenario that partial vacancy of Cl ions could be caused by applying proper VG＇s at slightly higher processing temperatures, which consequently results in a permanent electron doping in the system. Such a technique shows great potential to systematically tune the bulk electronic state in the similar two-dimensional systems.展开更多
基金Supported by the National Key Research Program of China under Grant Nos 2016YFA0401000 and 2016YFA0300604the National Basic Research Program of China under Grant No 2015CB921303+1 种基金the Strategic Priority Research Program(B)of Chinese Academy of Sciences under Grant No XDB07020100the National Natural Science Foundation of China under Grant No11874417
文摘We report a systematic study on magnetotransport properties of the single crystal of cadmium(Cd). When the applied magnetic field B is perpendicular to the current I, the resistivities for both directions(I ‖ a, I ‖ c) show field induced metal-to-insulator-like transitions. The isothermal magnetoresistance(MR) at low temperatures increases approximately as the square of the magnetic field without any sign of saturation, and reaches up to 1140000% and 58000% at T = 2 K and B = 9 T for I ‖ a and I ‖ c, respectively. As the magnetic field rotates to parallel to the current, no sign of negative MR is observed for I ‖ a, while an obvious negative MR appears up to-70% at 2 K and 9 T for the current flowing along the c-axis, and the negative longitudinal MR shows a strong dependence of the electrode position on the single crystal. These results suggest that the negative longitudinal MR is caused by the dislocations formed in the process of crystal growing along the c-axis. Further studies are needed to clarify this point.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFA0401000 and 2016YFA0300604)the National Key Basic Research Program of China(Grant No.2015CB921303)+1 种基金the Strategic Priority Research Program(B)of Chinese Academy of Sciences(Grant No.XDB07020100)the National Natural Science Foundation of China(Grant No.11874417)
文摘We report the transport properties of the CaAs_3 single crystal, which has been predicted to be a candidate for topological nodal-line semimetals. At ambient pressure, CaAs_3 exhibits semiconducting behavior with a small gap, while in some crystals containing tiny defects or impurities, a large "hump" in the resistivity is observed around 230 K. By applying hydrostatic pressure, the samples appear to a tendency towards metallic behavior, but not fully metallized up to 2 GPa.Further high pressure studies are needed to explore the topological characteristics for CaAs_3.
基金Supported by the National Natural Science Foundation of China under Grant No 11704403the National Key Research Program of China under Grant No 2016YFA0401000 and 2016YFA0300604the Strategic Priority Research Program(B)of Chinese Academy of Sciences under Grant No XDB07020100
文摘Devices of electric double-layer transistors （EDLTs） with ionic liquid have been employed as an effective way to dope carriers over a wide range. However, the induced electronic states can hardly survive in the materials after releasing the gate voltage VG at temperatures higher than the melting point of the selected ionic liquid. Here we show that a permanent superconductivity with transition temperature Tc of 24 and 15K is realized hi single crystals and polycrystalline samples of HfNCI and ZrNCI upon applying proper VG＇s at different temperatures. Reversible change between insulating and superconducting states can be obtained by applying positive and negative VG at low temperature such as 220K, whereas VG ＇s applied at 250K induce the irreversible superconducting transition. The upper critical field He2 of the superconducting states obtained at different gating temperatures shows similar temperature dependence. We propose a reasonable scenario that partial vacancy of Cl ions could be caused by applying proper VG＇s at slightly higher processing temperatures, which consequently results in a permanent electron doping in the system. Such a technique shows great potential to systematically tune the bulk electronic state in the similar two-dimensional systems.
