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Catalyst-free growth of ZnO nanowires on various-oriented sapphire substrates by pulsed-laser deposition 被引量:2
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作者 Tetsuya Shimogaki Masahiro Takahashi +5 位作者 Masaaki Yamasaki Taichi Fukuda mitsuhiro higashihata Hiroshi Ikenoue Daisuke Nakamura Tatsuo Okada 《Journal of Semiconductors》 EI CAS CSCD 2016年第2期20-24,共5页
Catalyst-free growth of one-dimensional zinc oxide (ZnO) nanowires is reported. ZnO nanowires were synthesized on ZnO buffer layers deposited on various-oriented sapphire substrates. Syntheses of ZnO buffer layers a... Catalyst-free growth of one-dimensional zinc oxide (ZnO) nanowires is reported. ZnO nanowires were synthesized on ZnO buffer layers deposited on various-oriented sapphire substrates. Syntheses of ZnO buffer layers and nanowires were performed by ultraviolet pulsed-laser deposition. ZnO nanowire's number density was the lowest in the case of using m-cut sapphire substrates. ZnO nanowires grown on a-cut sapphire substrates had vertical alignment with distances of tens to hundreds of nanometers. On the other hand, ZnO nanowires grown on c-cut sapphire substrates had the biggest nucleation rate. The dependence of crystalline orientation of ZnO buffer layers on the orientation of sapphire substrates were investigated by electron back scatter diffraction measurement. From their results, the growth models of ZnO buffer layers were suggested and the variations in morphological properties ofZnO nanowires were discussed. 展开更多
关键词 zinc oxide NANOWIRE catalyst free growth pulsed laser deposition
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