AIM To investigate the expression and prognostic role of programmed death ligand-1(PD-L1) in locally advanced esophageal squamous cell carcinoma(ESCC).METHODS A total of 200 patients with ESCC who underwent radical es...AIM To investigate the expression and prognostic role of programmed death ligand-1(PD-L1) in locally advanced esophageal squamous cell carcinoma(ESCC).METHODS A total of 200 patients with ESCC who underwent radical esophagectomy with standard lymphadenectomy as the initial definitive treatment in Seoul National University Hospital from December 2000 to April 2013 were eligible for this analysis. Tissue microarrays were constructed by collecting tissue cores from surgical specimens, and immunostained with antibodies directed against PD-L1, p16, and c-Met. Medical records were reviewed retrospectively to assess clinical outcomes. Patients were divided into two groups by PD-L1 status, and significant differences in clinicopathologic characteristics between the two groups were assessed. RESULTS Tumor tissues from 67 ESCC patients(33.5%) were PDL1-positive. Positive p16 expression was observed in 21 specimens(10.5%). The H-score for c-Met expression was ≥ 50 in 42 specimens(21.0%). Although PDL1-positivity was not significantly correlated with any clinical characteristics including age, sex, smoking/alcoholic history, stage, or differentiation, H-scores for c-Met expression were significantly associated with PDL1-positivity(OR = 2.34, 95%CI: 1.16-4.72, P = 0.017). PD-L1 expression was not significantly associated with a change in overall survival(P = 0.656). In contrast, the locoregional relapse rate tended to increase(P = 0.134), and the distant metastasis rate was significantly increased(HR = 1.72, 95%CI: 1.01-2.79, P = 0.028) in patients with PD-L1-positive ESCC compared to those with PD-L1-negative ESCC.CONCLUSION PD-L1 expression is positively correlated with c-Met expression in ESCC. PD-L1 may play a critical role in distant failure and progression of ESCC.展开更多
In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with t...In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with the degree of absorbing ability of the CIGS solar cell.We tried to characterize the depth profile of the lattice parameters of the CIGS absorbing layer using a glancing incidence X-ray diffraction(GIXRD)technique,and then investigate the bandgap grading of the CIGS absorbing layer.When the glancing incident angle increased from 0.50 to 5.00°,the a and c lattice parameters of the CIGS absorbing layer gradually decreased from 5.7776(3)to 5.6905(2)?,and 11.3917(3)to 11.2114(2)?,respectively.The depth profile of the lattice parameters as a function of the incident angle was consistent with vertical variation in the compositionof In or Ga with depth in the absorbing layer.The variation of the lattice parameters was due to the difference between the ionic radius of In and Ga co-occupying at the same crystallographic site.According to the results of the depth profile of the refined parameters using GIXRD data,the bandgap of the CIGS absorber layer was graded over a range of 1.222-1.532 eV.This approach allows to determine the In or Ga gradients in the CIGS absorbing layer,and to nondestructively guess the bandgap depth profile through the refinement of the lattice parameters using GIXRD data on the assumption that the changes of the lattice parameters or unit-cell volume follow a good approximation to Vegard’s law.展开更多
基金Supported by Seoul National University Hospital Research Fund,No.03-2015-0380Ministry of Health and Welfare,South Korea,No.HI06C0874
文摘AIM To investigate the expression and prognostic role of programmed death ligand-1(PD-L1) in locally advanced esophageal squamous cell carcinoma(ESCC).METHODS A total of 200 patients with ESCC who underwent radical esophagectomy with standard lymphadenectomy as the initial definitive treatment in Seoul National University Hospital from December 2000 to April 2013 were eligible for this analysis. Tissue microarrays were constructed by collecting tissue cores from surgical specimens, and immunostained with antibodies directed against PD-L1, p16, and c-Met. Medical records were reviewed retrospectively to assess clinical outcomes. Patients were divided into two groups by PD-L1 status, and significant differences in clinicopathologic characteristics between the two groups were assessed. RESULTS Tumor tissues from 67 ESCC patients(33.5%) were PDL1-positive. Positive p16 expression was observed in 21 specimens(10.5%). The H-score for c-Met expression was ≥ 50 in 42 specimens(21.0%). Although PDL1-positivity was not significantly correlated with any clinical characteristics including age, sex, smoking/alcoholic history, stage, or differentiation, H-scores for c-Met expression were significantly associated with PDL1-positivity(OR = 2.34, 95%CI: 1.16-4.72, P = 0.017). PD-L1 expression was not significantly associated with a change in overall survival(P = 0.656). In contrast, the locoregional relapse rate tended to increase(P = 0.134), and the distant metastasis rate was significantly increased(HR = 1.72, 95%CI: 1.01-2.79, P = 0.028) in patients with PD-L1-positive ESCC compared to those with PD-L1-negative ESCC.CONCLUSION PD-L1 expression is positively correlated with c-Met expression in ESCC. PD-L1 may play a critical role in distant failure and progression of ESCC.
基金supported by Korea Research Institute of Standards and Science(KRISS–2019–GP2019-0014)。
文摘In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with the degree of absorbing ability of the CIGS solar cell.We tried to characterize the depth profile of the lattice parameters of the CIGS absorbing layer using a glancing incidence X-ray diffraction(GIXRD)technique,and then investigate the bandgap grading of the CIGS absorbing layer.When the glancing incident angle increased from 0.50 to 5.00°,the a and c lattice parameters of the CIGS absorbing layer gradually decreased from 5.7776(3)to 5.6905(2)?,and 11.3917(3)to 11.2114(2)?,respectively.The depth profile of the lattice parameters as a function of the incident angle was consistent with vertical variation in the compositionof In or Ga with depth in the absorbing layer.The variation of the lattice parameters was due to the difference between the ionic radius of In and Ga co-occupying at the same crystallographic site.According to the results of the depth profile of the refined parameters using GIXRD data,the bandgap of the CIGS absorber layer was graded over a range of 1.222-1.532 eV.This approach allows to determine the In or Ga gradients in the CIGS absorbing layer,and to nondestructively guess the bandgap depth profile through the refinement of the lattice parameters using GIXRD data on the assumption that the changes of the lattice parameters or unit-cell volume follow a good approximation to Vegard’s law.
