In the past few decades,numerous high-performance silicon(Si)photonic devices have been demonstrated.Si,as a photonic platform,has received renewed interest in recent years.Efficient Si-basedⅢ–Ⅴquantum-dot(QDs)lase...In the past few decades,numerous high-performance silicon(Si)photonic devices have been demonstrated.Si,as a photonic platform,has received renewed interest in recent years.Efficient Si-basedⅢ–Ⅴquantum-dot(QDs)lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of Ⅲ–Ⅴcompounds.Although the material dissimilarity betweenⅢ–Ⅴmaterial and Si hindered the development of monolithic integrations for over 30 years,considerable breakthroughs happened in the 2000s.In this paper,we review recent progress in the epitaxial growth of various Ⅲ–ⅤQD lasers on both offcut Si substrate and on-axis Si(001)substrate.In addition,the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.展开更多
Robust laser sources are a fundamental building block for contemporary information technologies.Originating from condensed-matter physics,the concept of topology has recently entered the realm of optics,offering funda...Robust laser sources are a fundamental building block for contemporary information technologies.Originating from condensed-matter physics,the concept of topology has recently entered the realm of optics,offering fundamentally new design principles for lasers with enhanced robustness.In analogy to the well-known Majorana fermions in topological superconductors,Dirac-vortex states have recently been investigated in passive photonic systems and are now considered as a promising candidate for robust lasers.Here,we experimentally realize the topological Diracvortex microcavity lasers in InAs/InGaAs quantum-dot materials monolithically grown on a silicon substrate.We observe room-temperature continuous-wave linearly polarized vertical laser emission at a telecom wavelength.We confirm that the wavelength of the Dirac-vortex laser is topologically robust against variations in the cavity size,and its free spectral range defies the universal inverse scaling law with the cavity size.These lasers will play an important role in CMOS-compatible photonic and optoelectronic systems on a chip.展开更多
We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon(Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot(FP...We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon(Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot(FP) lasers have achieved a room-temperature continuous-wave(CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than-150 dB∕Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.展开更多
Monolithic integration of Ⅲ-Ⅴ lasers with small footprint, good coherence, and low power consumption based on a CMOS-compatible Si substrate have been known as an efficient route towards high-density optical interco...Monolithic integration of Ⅲ-Ⅴ lasers with small footprint, good coherence, and low power consumption based on a CMOS-compatible Si substrate have been known as an efficient route towards high-density optical interconnects in the photonic integrated circuits. However, the material dissimilarities between Si and Ⅲ-Ⅴ materials limit the performance of monolithic microlasers. Here, under the pumping condition of a continuous-wave 632.8 nm He–Ne gas laser at room temperature, we achieved an InAs/GaAs quantum dot photonic crystal bandedge laser, which is directly grown on an on-axis Si(001) substrate, which provides a feasible route towards a low-cost and large-scale integration method for light sources on the Si platform.展开更多
Semiconductor mode-locked lasers(MLLs)are promising frequency comb sources for dense wavelength-divisionmultiplexing(DWDM)data communications.Practical data communication requires a frequency-stable comb source in a t...Semiconductor mode-locked lasers(MLLs)are promising frequency comb sources for dense wavelength-divisionmultiplexing(DWDM)data communications.Practical data communication requires a frequency-stable comb source in a temperature-varying environment and a minimum tone spacing of 25 GHz to support high-speed DWDM transmissions.To the best of our knowledge,however,to date,there have been no demonstrations of comb sources that simultaneously offer a high repetition rate and stable mode spacing over an ultrawide temperature range.Here,we report a frequency comb source based on a quantum dot(QD)MLL that generates a frequency comb with stable mode spacing over an ultrabroad temperature range of 20–120℃.The two-section passively mode-locked In As QD MLL comb source produces an ultra-stable fundamental repetition rate of 25.5 GHz(corresponding to a 25.5 GHz spacing between adjacent tones in the frequency domain)with a variation of 0.07 GHz in the tone spacing over the tested temperature range.By keeping the saturable absorber reversely biased at-2 V,stable mode-locking over the whole temperature range can be achieved by tuning the current of the gain section only,providing easy control of the device.At an elevated temperature of 100℃,the device shows a 6 d B comb bandwidth of 4.81 nm and 31 tones with>36 d B optical signal-to-noise ratio.The corresponding relative intensity noise,averaged between 0.5 GHz and 10 GHz,is-146 d Bc∕Hz.Our results show the viability of the In As QD MLLs as ultra-stable,uncooled frequency comb sources for low-cost,large-bandwidth,and low-energy-consumption optical data communications.展开更多
基金financial support from the UK EPSRC under grant No. EP/P006973/1the EPSRC National Epitaxy Facility European project H2020-ICT-PICTURE (780930)+2 种基金the Royal Academy of Engineering (RF201617/16/28)Investissments d’avenir (IRT Nanoelec: ANR-10-IRT-05 and Need for IoT: ANR-15-IDEX-02)the Chinese Scholarship Council for funding
文摘In the past few decades,numerous high-performance silicon(Si)photonic devices have been demonstrated.Si,as a photonic platform,has received renewed interest in recent years.Efficient Si-basedⅢ–Ⅴquantum-dot(QDs)lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of Ⅲ–Ⅴcompounds.Although the material dissimilarity betweenⅢ–Ⅴmaterial and Si hindered the development of monolithic integrations for over 30 years,considerable breakthroughs happened in the 2000s.In this paper,we review recent progress in the epitaxial growth of various Ⅲ–ⅤQD lasers on both offcut Si substrate and on-axis Si(001)substrate.In addition,the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.
基金This work was supported by the Research Grants Council of Hong Kong(14209519,C4050-21E)The Chinese University of Hong Kong(Group Research Scheme),National Natural Science Foundation of China(62174144)+4 种基金Shenzhen Fundamental Research Fund(JCYJ20210324115605016,JCYJ20210324120204011)Shenzhen Key Laboratory Project(ZDSYS201603311644527),Optical Communication Core Chip Research Platform,UK Engineering and Physical Sciences Research Council(EP/P006973/1,EP/T01394X/1,EP/T028475/1)National Epitaxy Facility,European project H2020-ICT-PICTURE(780930)Royal Academy of Engineering(RF201617/16/28)French National Research Agency under the Investissements d’avenir ANR-10-IRT-05 and ANR-15-IDEX-02 and French RENATECH network.The devices were partially fabricated in the Core Research Facilities at Southern University of Science and Technology,whose engineers provided technical support.
文摘Robust laser sources are a fundamental building block for contemporary information technologies.Originating from condensed-matter physics,the concept of topology has recently entered the realm of optics,offering fundamentally new design principles for lasers with enhanced robustness.In analogy to the well-known Majorana fermions in topological superconductors,Dirac-vortex states have recently been investigated in passive photonic systems and are now considered as a promising candidate for robust lasers.Here,we experimentally realize the topological Diracvortex microcavity lasers in InAs/InGaAs quantum-dot materials monolithically grown on a silicon substrate.We observe room-temperature continuous-wave linearly polarized vertical laser emission at a telecom wavelength.We confirm that the wavelength of the Dirac-vortex laser is topologically robust against variations in the cavity size,and its free spectral range defies the universal inverse scaling law with the cavity size.These lasers will play an important role in CMOS-compatible photonic and optoelectronic systems on a chip.
基金Engineering and Physical Sciences Research Council(EPSRC)(EP/P006973/1)Royal Academy of Engineering(RF201617/16/28)Chinese Scholarship Council
文摘We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon(Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot(FP) lasers have achieved a room-temperature continuous-wave(CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than-150 dB∕Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.
基金This research was supported by the National Natural Science Foundation of China(No.62174144)Shenzhen Fundamental Research Fund(Nos.JCYJ20210324115605016 and JCYJ20210324120204011)+7 种基金Optical Communication Core Chip Research Platform,Shenzhen Key Laboratory Project(No.ZDSYS201603311644527)Longgang Key Laboratory Project(Nos.ZSYS2017003 and LGKCZSYS2018000015)Longgang Matching Support Fund(Nos.CXPTPT-2017-YJ-002 and 201617486)President's Fund(PF01000154)UK Engineering and Physical Sciences Research Council(EP/P006973/1 and National Epitaxy Facility)European project H2020-ICT-PICTURE(780930)Royal Academy of Engineering(RF201617/16/28)French government managed by ANR under the Investissements davenir ANR-10-IRT-05 and ANR-15-IDEX-02 and French RENATECH network.
文摘Monolithic integration of Ⅲ-Ⅴ lasers with small footprint, good coherence, and low power consumption based on a CMOS-compatible Si substrate have been known as an efficient route towards high-density optical interconnects in the photonic integrated circuits. However, the material dissimilarities between Si and Ⅲ-Ⅴ materials limit the performance of monolithic microlasers. Here, under the pumping condition of a continuous-wave 632.8 nm He–Ne gas laser at room temperature, we achieved an InAs/GaAs quantum dot photonic crystal bandedge laser, which is directly grown on an on-axis Si(001) substrate, which provides a feasible route towards a low-cost and large-scale integration method for light sources on the Si platform.
基金Royal Academy of Engineering(RF201617/16/28)Engineering and Physical Sciences Research Council(EP/R041792/1,EP/T01394X/1)。
文摘Semiconductor mode-locked lasers(MLLs)are promising frequency comb sources for dense wavelength-divisionmultiplexing(DWDM)data communications.Practical data communication requires a frequency-stable comb source in a temperature-varying environment and a minimum tone spacing of 25 GHz to support high-speed DWDM transmissions.To the best of our knowledge,however,to date,there have been no demonstrations of comb sources that simultaneously offer a high repetition rate and stable mode spacing over an ultrawide temperature range.Here,we report a frequency comb source based on a quantum dot(QD)MLL that generates a frequency comb with stable mode spacing over an ultrabroad temperature range of 20–120℃.The two-section passively mode-locked In As QD MLL comb source produces an ultra-stable fundamental repetition rate of 25.5 GHz(corresponding to a 25.5 GHz spacing between adjacent tones in the frequency domain)with a variation of 0.07 GHz in the tone spacing over the tested temperature range.By keeping the saturable absorber reversely biased at-2 V,stable mode-locking over the whole temperature range can be achieved by tuning the current of the gain section only,providing easy control of the device.At an elevated temperature of 100℃,the device shows a 6 d B comb bandwidth of 4.81 nm and 31 tones with>36 d B optical signal-to-noise ratio.The corresponding relative intensity noise,averaged between 0.5 GHz and 10 GHz,is-146 d Bc∕Hz.Our results show the viability of the In As QD MLLs as ultra-stable,uncooled frequency comb sources for low-cost,large-bandwidth,and low-energy-consumption optical data communications.
