As a type of charge-balanced power device,the performance of super-junction MOSFETs(SJ-MOS)is significantly influ-enced by fluctuations in the fabrication process.To overcome the relatively narrow process window of co...As a type of charge-balanced power device,the performance of super-junction MOSFETs(SJ-MOS)is significantly influ-enced by fluctuations in the fabrication process.To overcome the relatively narrow process window of conventional SJ-MOS,an optimized structure"vertical variable doping super-junction MOSFET(VVD-SJ)"is proposed.Based on the analysis using the charge superposition principle,it is observed that the VVD-SJ,in which the impurity concentration of the P-pillar gradually decreases while that of the N-pillar increases from top to bottom,improves the electric field distribution and mitigates charge imbalance(CIB).Experimental results demonstrate that the optimized 600 V VVD-SJ achieves a 35.90%expansion of the pro-cess window.展开更多
基金supported by the National Science Foundation of Guangdong Province under Grant 2023A1515012652School-enterprise cooperation projects of ZTE Corporation.
文摘As a type of charge-balanced power device,the performance of super-junction MOSFETs(SJ-MOS)is significantly influ-enced by fluctuations in the fabrication process.To overcome the relatively narrow process window of conventional SJ-MOS,an optimized structure"vertical variable doping super-junction MOSFET(VVD-SJ)"is proposed.Based on the analysis using the charge superposition principle,it is observed that the VVD-SJ,in which the impurity concentration of the P-pillar gradually decreases while that of the N-pillar increases from top to bottom,improves the electric field distribution and mitigates charge imbalance(CIB).Experimental results demonstrate that the optimized 600 V VVD-SJ achieves a 35.90%expansion of the pro-cess window.
