Pure and doped Polyvinylidene difluoride (PVDF) films, for the detection of infrared radiation, have been well documented using the mechanism of pyroelectricity. Alternatively, the electrical properties of films made ...Pure and doped Polyvinylidene difluoride (PVDF) films, for the detection of infrared radiation, have been well documented using the mechanism of pyroelectricity. Alternatively, the electrical properties of films made from Polyvinyl Alcohol (PVA) have received considerable attention in recent years. The investigation of surface resistivities of both such films, to this point, has received far less consideration in comparison to pyroelectric effects. In this research, we report temperature dependent surface resistivity measurements of commercial, and of multiwall carbon nanotubes (MWCNT), or Ag-nanoparticle doped PVA films. Without any variation in the temperature range from 22°C to 40°C with controlled humidity, we found that the surface resistivity decreases initially, reaches a minimum, but rises steadily as the temperature continues to increase. This research was conducted with the combined instrumentation of the Keithley Model 6517 Electrometer and Keithley Model 8009 resistivity test fixture using both commercial and in-house produced organic thin films. With the objective to quantify the suitability of PVDF and PVA films as IR detector materials, when using the surface resistivity phenomenon, instead of or in addition to the pyroelectricity, surface resistivity measurements are reported when considering bolometry. We found that the surface resistivity measurements on PVA films were readily implemented.展开更多
The sol-gel method is a novel technique for the preparation of thin films. In this research, gadolinium oxide (Gd2O3) and gadolinium oxide europium doped (Gd2O3:Eu3+) films prepared via the sol-gel and dip coating met...The sol-gel method is a novel technique for the preparation of thin films. In this research, gadolinium oxide (Gd2O3) and gadolinium oxide europium doped (Gd2O3:Eu3+) films prepared via the sol-gel and dip coating methods were investigated. In addition to the elaboration on the sol-gel preparation routes and additional observations of the films’ surface morphology as characterized by scanning electron microscope (SEM), we determined via viscosity measurements that the sols were stable for 398 days. FTIR analysis of the Gd2O3 and Gd2O3:Eu3+ dip coated films was made to monitor the decomposition and oxidation reactions that occurred during processing as well as process stability.展开更多
One challenge to the use of lightly-doped, high efficiency emitters on multicrystalline silicon wafers is the poor gettering efficiency of the diffusion processes used to fabricate them. With the photovoltaic industry...One challenge to the use of lightly-doped, high efficiency emitters on multicrystalline silicon wafers is the poor gettering efficiency of the diffusion processes used to fabricate them. With the photovoltaic industry highly reliant on heavily doped phosphorus diffusions as a source of gettering, the transition to selective emitter structures would require new alternative methods of impurity extraction. In this paper, a novel laser based method for gettering is investigated for available silicon wafers used its impact on commercially in the manufacturing of solar cells. Direct comparisons between laser enhanced gettering （LasEG） and lightly-doped emitter diffusion gettering demonstrate a 45% absolute improvement in bulk minority carrier lifetime when using the laser process. Although grain boundaries can be effective gettering sites in multicrystalline wafers, laser processing can substantially improve the performance of both grain boundary sites and intra-grain regions. This improvement is correlated with a factor of 6 further decrease in interstitial iron concentra- tions. The removal of such impurities from multicrystalline wafers using the laser process can result in intra-grain enhancements in implied open-circuit voltage of up to 40 mV. In instances where specific dopant profiles are required for a diffusion on one surface of a solar cell, and the diffusion process does not enable effective gettering, LasEG may enable improved gettering during the diffusion process.展开更多
文摘Pure and doped Polyvinylidene difluoride (PVDF) films, for the detection of infrared radiation, have been well documented using the mechanism of pyroelectricity. Alternatively, the electrical properties of films made from Polyvinyl Alcohol (PVA) have received considerable attention in recent years. The investigation of surface resistivities of both such films, to this point, has received far less consideration in comparison to pyroelectric effects. In this research, we report temperature dependent surface resistivity measurements of commercial, and of multiwall carbon nanotubes (MWCNT), or Ag-nanoparticle doped PVA films. Without any variation in the temperature range from 22°C to 40°C with controlled humidity, we found that the surface resistivity decreases initially, reaches a minimum, but rises steadily as the temperature continues to increase. This research was conducted with the combined instrumentation of the Keithley Model 6517 Electrometer and Keithley Model 8009 resistivity test fixture using both commercial and in-house produced organic thin films. With the objective to quantify the suitability of PVDF and PVA films as IR detector materials, when using the surface resistivity phenomenon, instead of or in addition to the pyroelectricity, surface resistivity measurements are reported when considering bolometry. We found that the surface resistivity measurements on PVA films were readily implemented.
文摘The sol-gel method is a novel technique for the preparation of thin films. In this research, gadolinium oxide (Gd2O3) and gadolinium oxide europium doped (Gd2O3:Eu3+) films prepared via the sol-gel and dip coating methods were investigated. In addition to the elaboration on the sol-gel preparation routes and additional observations of the films’ surface morphology as characterized by scanning electron microscope (SEM), we determined via viscosity measurements that the sols were stable for 398 days. FTIR analysis of the Gd2O3 and Gd2O3:Eu3+ dip coated films was made to monitor the decomposition and oxidation reactions that occurred during processing as well as process stability.
文摘One challenge to the use of lightly-doped, high efficiency emitters on multicrystalline silicon wafers is the poor gettering efficiency of the diffusion processes used to fabricate them. With the photovoltaic industry highly reliant on heavily doped phosphorus diffusions as a source of gettering, the transition to selective emitter structures would require new alternative methods of impurity extraction. In this paper, a novel laser based method for gettering is investigated for available silicon wafers used its impact on commercially in the manufacturing of solar cells. Direct comparisons between laser enhanced gettering （LasEG） and lightly-doped emitter diffusion gettering demonstrate a 45% absolute improvement in bulk minority carrier lifetime when using the laser process. Although grain boundaries can be effective gettering sites in multicrystalline wafers, laser processing can substantially improve the performance of both grain boundary sites and intra-grain regions. This improvement is correlated with a factor of 6 further decrease in interstitial iron concentra- tions. The removal of such impurities from multicrystalline wafers using the laser process can result in intra-grain enhancements in implied open-circuit voltage of up to 40 mV. In instances where specific dopant profiles are required for a diffusion on one surface of a solar cell, and the diffusion process does not enable effective gettering, LasEG may enable improved gettering during the diffusion process.
