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Successful Surgical Treatment of a Giant Mediastinal False Aneurysm 30 Years after Bentall Operation
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作者 Vincenzo Smorto massimo longo +4 位作者 Paolo Pisi Marco Meli Luca Massarenti Paolo Giovanardi Guglielmo Stefanelli 《World Journal of Cardiovascular Surgery》 2016年第3期35-39,共5页
False aneurysm occurring after replacement of ascending aorta by a vascular prosthesis is a rare, but life-threatening complication. In spite of advances in endovascular techniques, surgery remains the treatment of ch... False aneurysm occurring after replacement of ascending aorta by a vascular prosthesis is a rare, but life-threatening complication. In spite of advances in endovascular techniques, surgery remains the treatment of choice in the majority of cases. We report the case of a huge pseudoaneurysm caused by late dehiscence of the right coronary ostium-aortic tubular graft anastomosis, occurred 30 years after replacement of aortic valve and ascending aorta by classical Bentall operation. A fistula originating from the aneurysmal sac extended across the sternum into the thoracic subcutaneous soft tissues and gave rise to a pulsatile mass well appreciable on the anterior chest wall. The surgical treatment, consisting of partial resection of the aortic tubular graft and sternal reconstruction was effective and uneventful. 展开更多
关键词 Re-Do Aortic Surgery False Aneurysm of the Ascending Aorta Bentall Operation
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ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 被引量:2
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作者 Emanuele longo Roberto Mantovan +8 位作者 Raimondo Cecchini Michael D.Overbeek massimo longo Giovanna Trevisi Laura Lazzarini Graziella Tallarida Marco Fanciulli Charles H.Winter Claudia Wiemer 《Nano Research》 SCIE EI CAS CSCD 2020年第2期570-575,共6页
Taking the full advantage of the conformal growth characterizing atomic layer deposition(ALD),the possibility to grow Co thin films,with thickness from several tens down to few nanometers on top of a granular topologi... Taking the full advantage of the conformal growth characterizing atomic layer deposition(ALD),the possibility to grow Co thin films,with thickness from several tens down to few nanometers on top of a granular topological insulator(TI)Sb2Tes film,exhibiting a quite high surface roughness(2-5 nm),was demonstrated.To study the Co growth on the Sb2Tes substrate,we performed simultaneous Co depositions also on sputtered Pt substrates for comparison.We conducted a thorough chemical-structural characterization of the Co/Sb2Tes and Co/Pt heterostructures,confirming for both cases,not only an excellent conformality,but also the structural continuity of the Co layers.X-ray diffraction(XRD)and high-resolution transmission electron microscope(HRTEM)analyses evidenced that Co on Sb2Te3 grows preferentially oriented along the[0oe]direction,following the underlying rhombohedric substrate.Differently,Co crystallizes in a cubic phase oriented along the[111]direction when deposited on Pt.This work shows that,in case of deposition of crystalline materials,the ALD surface selectivity and conformality can be extended to the definition of local epitaxy,where in-plane ordering of the crystal structure and mosaicity of the developed crystallized grains are dictated by the underlying substrate.Moreover,a highly sharp and chemically-pure Co/Sb2Tes interface was evidenced,which is promising for the application of this growth process for spintronics. 展开更多
关键词 atomic layer deposition X-ray diffraction Co-fcc Co-hep antimony telluride metal organic chemical vapor deposition SPINTRONICS
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