To fabricate a heterostructure solar cell using environmentally friendly materials and low cost techniques, tin oxide (SnO2) and cuprous oxide (Cu2O) were deposited by the sol-gel method and the electrochemical deposi...To fabricate a heterostructure solar cell using environmentally friendly materials and low cost techniques, tin oxide (SnO2) and cuprous oxide (Cu2O) were deposited by the sol-gel method and the electrochemical deposition, respectively. The SnO2 films were deposited from a SnCl2 solution containing ethanol and acetic acid. The Cu2O films were deposited using a galvanostatic method from an aqueous bath containing CuSO4 and lactic acid at a temperature of 40°C. The Cu2O/SnO2 heterostructure solar cells showed rectification and photovoltaic properties, and the best cell showed a conversion efficiency of 6.6 × 10-2 % with an open-circuit voltage of 0.29 V, a short-circuit current of 0.58 mA/cm2, and a fill factor of 0.39.展开更多
The post-deposition heat treatment (annealing) for the electrochemically deposited thin film is often necessary in order to improve its crystallinity. In the present study, the electrochemically deposited indium sulfi...The post-deposition heat treatment (annealing) for the electrochemically deposited thin film is often necessary in order to improve its crystallinity. In the present study, the electrochemically deposited indium sulfide oxide thin film was annealed in sulphure atmosphere for 60 min at 150℃ and 300℃. The impact of the annealing process on the composition, crystal structure, and surface morphology of the thin film was investigated. In addition, superstrate heterojunction solar cells based on the annealed film as a buffer layer and tin sulphide as an active layer were fabricated and characterized. They showed diode-like behavior under dark condition and a relatively small photovoltaic effect under AM1.5 illumination condition.展开更多
文摘To fabricate a heterostructure solar cell using environmentally friendly materials and low cost techniques, tin oxide (SnO2) and cuprous oxide (Cu2O) were deposited by the sol-gel method and the electrochemical deposition, respectively. The SnO2 films were deposited from a SnCl2 solution containing ethanol and acetic acid. The Cu2O films were deposited using a galvanostatic method from an aqueous bath containing CuSO4 and lactic acid at a temperature of 40°C. The Cu2O/SnO2 heterostructure solar cells showed rectification and photovoltaic properties, and the best cell showed a conversion efficiency of 6.6 × 10-2 % with an open-circuit voltage of 0.29 V, a short-circuit current of 0.58 mA/cm2, and a fill factor of 0.39.
文摘The post-deposition heat treatment (annealing) for the electrochemically deposited thin film is often necessary in order to improve its crystallinity. In the present study, the electrochemically deposited indium sulfide oxide thin film was annealed in sulphure atmosphere for 60 min at 150℃ and 300℃. The impact of the annealing process on the composition, crystal structure, and surface morphology of the thin film was investigated. In addition, superstrate heterojunction solar cells based on the annealed film as a buffer layer and tin sulphide as an active layer were fabricated and characterized. They showed diode-like behavior under dark condition and a relatively small photovoltaic effect under AM1.5 illumination condition.
