We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway,independent of other growth parameters.Thereby a wide range of growth parameters can be explored to improve the na...We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway,independent of other growth parameters.Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth.We demonstrate the method using etching by HCl during InP nanowire growth.The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.展开更多
Live observations of growing nanowires using in situ transmission electron microscopy （TEM） is becoming an increasingly important tool for understanding the dynamic processes occurring during nanowire growth. Here w...Live observations of growing nanowires using in situ transmission electron microscopy （TEM） is becoming an increasingly important tool for understanding the dynamic processes occurring during nanowire growth. Here we present observations of growing InAs nanowires, which constitute the first reported in situ growth of a In-V compound in a transmission electron microscope. Real time observations of events taking place over longer growth lengths were possible due to the high growth rates of up to I nm/s that were achieved. Straight growth （mainly in 〈111〉B directions） was observed at uniform temperature and partial pressure while intentional fluctuations in these conditions caused the nanowires to form kinks and change growth direction. The mechanisms behind the kinking are discussed in detail. In situ observations of nanowire kinking has previously only been reported for nonpolar diamond structure type materials （such as Si）, but here we present results for a polar zinc blende structure （InAs）. In this study a closed cell with electron and X-ray transparent a-SiN windows was used in a conventional high resolution transmission electron microscope, enabling high resolution imaging and compositional analysis in between the growth periods.展开更多
We have investigated individual bulk-like wires of wurtzite InP using photoluminescence, photoluminescence excitation spectroscopy and transmission electron microscopy. Using two different methods we find that the top...We have investigated individual bulk-like wires of wurtzite InP using photoluminescence, photoluminescence excitation spectroscopy and transmission electron microscopy. Using two different methods we find that the top of the valence band is split, as expected theoretically. This splitting of the valence band is peculiar to wurtzite InP and does not occur in zinc blende InP. We find the energy difference between the two bands to be 40 meV.展开更多
In this report we explore the structural and optical properties of GaAs/A1GaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-tempe...In this report we explore the structural and optical properties of GaAs/A1GaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-temperature cathodo- luminescence （CL） in a scanning electron microscope （SEM）. We perform a systematic investigation of how the nanowire growth-temperature affects the total photon emission, and variations in the emission energy and intensity along the length of the nanowires. The morphology and crystal structures of the nanowires were investigated using SEM and transmission electron microscopy （TEM）. In order to correlate specific photon emission characteristics with variations in the nanowire crystal structure directly, TEM and spatially resolved CL measurements were performed on the same individual nanowires. We found that the main emission energy was located at around 1.48 eV, and that the emission intensity was greatly enhanced when increasing the GaAs nanowire core growth temperature. The data strongly suggests that this emission energy is related to rotational twins in the GaAs nanowire core. Our measurements also show that radial overgrowth by GaAs on the GaAs nanowire core can have a deteriorating effect on the optical quality of the nanowires. Finally, we conclude that an in situ pre-growth annealing step at a sufficiently high temperature significantly improves the optical quality of the nanowires.展开更多
基金This work was performed within the Nanometer Structure Consortium at Lund University and supported by the Swedish Energy Agency,the Swedish Research Council,the Swedish Foundation for Strategic Research,and by the EU programs AMON-RA(No.214814)and NODE(No.015783)This report is based on a project which was funded by E.ON AG as part of the E.ON International Research Initiative.Responsibility for the content of this publication lies with the authors.
文摘We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway,independent of other growth parameters.Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth.We demonstrate the method using etching by HCl during InP nanowire growth.The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.
文摘Live observations of growing nanowires using in situ transmission electron microscopy （TEM） is becoming an increasingly important tool for understanding the dynamic processes occurring during nanowire growth. Here we present observations of growing InAs nanowires, which constitute the first reported in situ growth of a In-V compound in a transmission electron microscope. Real time observations of events taking place over longer growth lengths were possible due to the high growth rates of up to I nm/s that were achieved. Straight growth （mainly in 〈111〉B directions） was observed at uniform temperature and partial pressure while intentional fluctuations in these conditions caused the nanowires to form kinks and change growth direction. The mechanisms behind the kinking are discussed in detail. In situ observations of nanowire kinking has previously only been reported for nonpolar diamond structure type materials （such as Si）, but here we present results for a polar zinc blende structure （InAs）. In this study a closed cell with electron and X-ray transparent a-SiN windows was used in a conventional high resolution transmission electron microscope, enabling high resolution imaging and compositional analysis in between the growth periods.
文摘We have investigated individual bulk-like wires of wurtzite InP using photoluminescence, photoluminescence excitation spectroscopy and transmission electron microscopy. Using two different methods we find that the top of the valence band is split, as expected theoretically. This splitting of the valence band is peculiar to wurtzite InP and does not occur in zinc blende InP. We find the energy difference between the two bands to be 40 meV.
文摘In this report we explore the structural and optical properties of GaAs/A1GaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-temperature cathodo- luminescence （CL） in a scanning electron microscope （SEM）. We perform a systematic investigation of how the nanowire growth-temperature affects the total photon emission, and variations in the emission energy and intensity along the length of the nanowires. The morphology and crystal structures of the nanowires were investigated using SEM and transmission electron microscopy （TEM）. In order to correlate specific photon emission characteristics with variations in the nanowire crystal structure directly, TEM and spatially resolved CL measurements were performed on the same individual nanowires. We found that the main emission energy was located at around 1.48 eV, and that the emission intensity was greatly enhanced when increasing the GaAs nanowire core growth temperature. The data strongly suggests that this emission energy is related to rotational twins in the GaAs nanowire core. Our measurements also show that radial overgrowth by GaAs on the GaAs nanowire core can have a deteriorating effect on the optical quality of the nanowires. Finally, we conclude that an in situ pre-growth annealing step at a sufficiently high temperature significantly improves the optical quality of the nanowires.
