Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy.However,the diversity of their application is limited by the covered spectral bandwidth.In...Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy.However,the diversity of their application is limited by the covered spectral bandwidth.In particular,the upper frequency limit of photoconductive emitters-the most widespread technique in THz spectroscopy-reaches only up to 7 THz in the regular transmission mode due to absorption by infrared-active optical phonons.Here,we present ultrabroadband(extending up to 70 THz)THz emission from an Au-implanted Ge emitter that is compatible with mode-locked fibre lasers operating at wavelengths of 1.1 and 1.55μm with pulse repetition rates of 10 and 20 MHz,respectively.This result opens up the possibility for the development of compact THz photonic devices operating up to multi-THz frequencies that are compatible with Si CMOS technology.展开更多
Direct integration of high-mobility III-V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor （CMOS） processing platforms presents the main challenge to increasing the CMOS perform...Direct integration of high-mobility III-V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor （CMOS） processing platforms presents the main challenge to increasing the CMOS performance and the scaling trend. Silicon hetero-nanowires with integrated III-V segments are one of the most promising candidates for advanced nano-optoelectronics, as first demonstrated using molecular beam epitaxy techniques. Here we demonstrate a novel route for InAs/Si hybrid nanowire fabrication via millisecond range liquid-phase epitaxy regrowth using sequential ion beam implantation and flash-lamp annealing. We show that such highly mismatched systems can be monolithically integrated within a single nanowire. Optical and microstructural investigations confirm the high quality hetero-nanowire fabrication coupled with the formation of atomically sharp interfaces between Si and InAs segments. Such hybrid systems open new routes for future high-speed and multifunctional nanoelectronic devices on a single chip.展开更多
基金The support by R.Bottger and the Ion Beam Center(IBC)at HZDR is gratefully acknowledged.
文摘Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy.However,the diversity of their application is limited by the covered spectral bandwidth.In particular,the upper frequency limit of photoconductive emitters-the most widespread technique in THz spectroscopy-reaches only up to 7 THz in the regular transmission mode due to absorption by infrared-active optical phonons.Here,we present ultrabroadband(extending up to 70 THz)THz emission from an Au-implanted Ge emitter that is compatible with mode-locked fibre lasers operating at wavelengths of 1.1 and 1.55μm with pulse repetition rates of 10 and 20 MHz,respectively.This result opens up the possibility for the development of compact THz photonic devices operating up to multi-THz frequencies that are compatible with Si CMOS technology.
文摘Direct integration of high-mobility III-V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor （CMOS） processing platforms presents the main challenge to increasing the CMOS performance and the scaling trend. Silicon hetero-nanowires with integrated III-V segments are one of the most promising candidates for advanced nano-optoelectronics, as first demonstrated using molecular beam epitaxy techniques. Here we demonstrate a novel route for InAs/Si hybrid nanowire fabrication via millisecond range liquid-phase epitaxy regrowth using sequential ion beam implantation and flash-lamp annealing. We show that such highly mismatched systems can be monolithically integrated within a single nanowire. Optical and microstructural investigations confirm the high quality hetero-nanowire fabrication coupled with the formation of atomically sharp interfaces between Si and InAs segments. Such hybrid systems open new routes for future high-speed and multifunctional nanoelectronic devices on a single chip.
