Hydrogenated amorphous silicon(a-Si:H) films were deposited by reactive facing target sputtering(FTS) technique with a mixture of Ar and H2 reaction gas.Fourier transform infrared(FTIR) absorption,Raman scattering and...Hydrogenated amorphous silicon(a-Si:H) films were deposited by reactive facing target sputtering(FTS) technique with a mixture of Ar and H2 reaction gas.Fourier transform infrared(FTIR) absorption,Raman scattering and ultraviolet-visible optical absorption are used to investigate the microstructure and optical properties of the deposited films.The decrease of the concentration of bonded hydrogen,especially that of(Si-H2)n with increasing substrate temperature(Ts),was observed in FTIR spectra,suggesting the atomic density increases and the concentration of microvoids decrease in a-Si:H films.The increase of both the short range order and the intermediate range order of amorphous network for a-Si:H films were verified by Raman scattering spectra,in which increasing Ts decreasing the band width of TO and the scattering intensity ratio ITA/ITO were obtained.All above results clarify the effect of increasing Ts on the microstructure amelioration for a-Si:H films.The reduction of disordered domains is correlated with the film growing process,where the increased surface diffusion mobility and etching of weak bonds is induced by increasing Ts.Furthermore,analysis of optical absorption indicates that the films with a lower optical band gap and a narrower band edge can be obtained by this FTS technique.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.60940020)the Natural Foundation of Hebei Province(Grant Nos.E2008000619 and E2009000208)
文摘Hydrogenated amorphous silicon(a-Si:H) films were deposited by reactive facing target sputtering(FTS) technique with a mixture of Ar and H2 reaction gas.Fourier transform infrared(FTIR) absorption,Raman scattering and ultraviolet-visible optical absorption are used to investigate the microstructure and optical properties of the deposited films.The decrease of the concentration of bonded hydrogen,especially that of(Si-H2)n with increasing substrate temperature(Ts),was observed in FTIR spectra,suggesting the atomic density increases and the concentration of microvoids decrease in a-Si:H films.The increase of both the short range order and the intermediate range order of amorphous network for a-Si:H films were verified by Raman scattering spectra,in which increasing Ts decreasing the band width of TO and the scattering intensity ratio ITA/ITO were obtained.All above results clarify the effect of increasing Ts on the microstructure amelioration for a-Si:H films.The reduction of disordered domains is correlated with the film growing process,where the increased surface diffusion mobility and etching of weak bonds is induced by increasing Ts.Furthermore,analysis of optical absorption indicates that the films with a lower optical band gap and a narrower band edge can be obtained by this FTS technique.
