All-optical wavelength conversion is a key technology for resolving wavelength contention challenges in routing and switching in a format-and transmission-rate-transparent fashion.Silicon-on-insulator devices,with the...All-optical wavelength conversion is a key technology for resolving wavelength contention challenges in routing and switching in a format-and transmission-rate-transparent fashion.Silicon-on-insulator devices,with their high optical confinement and large Kerr coefficient,hold promise for the on-chip integration of efficient wavelength converters.However,integrated wavelength converters based on four-wave mixing still face challenges,such as the inefficiency of the process,which is exacerbated by the need for off-chip filtering.Such filtering is essential to suppress the residual pump(s)and signal,ensuring the output spectrum predominantly contains the newly generated idler.While on-chip filtering has already been demonstrated,aspects such as idler continuous tunability and system performance when operating with high-symbol-rate signals remain unexplored.We present a silicon photonic wavelength converter with an integrated filter that achieves widely tunable filtering over 25 nm,with a pump and modulated signal suppression ratio exceeding 52 dB.The operation of the device with telecommunication signals is demonstrated across the C-band.展开更多
In this work,we present a tunnel epitaxy platform to integrateⅢ-V membranes with the silicon(Si)waveguide layer on silicon-on-insulator substrates.Using metal-organic vapor-phase epitaxy,we demonstrate uniform,nearly...In this work,we present a tunnel epitaxy platform to integrateⅢ-V membranes with the silicon(Si)waveguide layer on silicon-on-insulator substrates.Using metal-organic vapor-phase epitaxy,we demonstrate uniform,nearly dislocation-free InP membranes with the size of several hundred micrometers in length and a few micrometers in width.The InP membranes are positioned above Si waveguides with a thin SiN layer in between,closely resembling the vertical integration of Ⅲ-Ⅴ/Si bonded structures.Simulation studies reveal the versatility of the platform in fabricating hybrid modulators as well as membrane lasers with novel lateral junctions.Characterizations of the InP membranes by transmission electron microscopy and electron channeling contrast imaging show high crystalline quality.Room-temperature lasing from an InP Fabry-Pérot laser further confirms the excellent optical quality.This platform therefore offers a promising,fully epitaxial solution for next-generation Si photonics technologies.展开更多
We report the design, fabrication, and characterization of a universal silicon PN junction ring resonator for C band error-free communication links operated up to 50 Gb/s with co-designed optical modulation and detect...We report the design, fabrication, and characterization of a universal silicon PN junction ring resonator for C band error-free communication links operated up to 50 Gb/s with co-designed optical modulation and detection performance. The universal p-n junction ring device shows co-designed detection responsivity up to 0.84 A/W, in conjunction with a modulation efficiency of -4 V·mm and>8 d B optical modulation extinction ratio, enabling C band 50 Gb/s NRZ communication link with a bit error rate≤3×10^(-12).展开更多
基金UK’s EPSRC through projects JUNIPERS (EP/T007303/1) and HASC (EP/X040569/1)Strategic Equipment Award (EP/X030040/1)Royal Society (EP/T019697/1, CORNERSTONE 2, EP/W035995/1,CORNERSTONE 2.5)
文摘All-optical wavelength conversion is a key technology for resolving wavelength contention challenges in routing and switching in a format-and transmission-rate-transparent fashion.Silicon-on-insulator devices,with their high optical confinement and large Kerr coefficient,hold promise for the on-chip integration of efficient wavelength converters.However,integrated wavelength converters based on four-wave mixing still face challenges,such as the inefficiency of the process,which is exacerbated by the need for off-chip filtering.Such filtering is essential to suppress the residual pump(s)and signal,ensuring the output spectrum predominantly contains the newly generated idler.While on-chip filtering has already been demonstrated,aspects such as idler continuous tunability and system performance when operating with high-symbol-rate signals remain unexplored.We present a silicon photonic wavelength converter with an integrated filter that achieves widely tunable filtering over 25 nm,with a pump and modulated signal suppression ratio exceeding 52 dB.The operation of the device with telecommunication signals is demonstrated across the C-band.
基金Engineering and Physical Sciences Research Council(EP/T01105X/1,EP/Z536167/1)Future Compound Semiconductor Manufacturing Hub(EP/P006973/1)+1 种基金Rockley Photonics prosperity partnership(EP/R003076/1)Royal Society(UF150325)。
文摘In this work,we present a tunnel epitaxy platform to integrateⅢ-V membranes with the silicon(Si)waveguide layer on silicon-on-insulator substrates.Using metal-organic vapor-phase epitaxy,we demonstrate uniform,nearly dislocation-free InP membranes with the size of several hundred micrometers in length and a few micrometers in width.The InP membranes are positioned above Si waveguides with a thin SiN layer in between,closely resembling the vertical integration of Ⅲ-Ⅴ/Si bonded structures.Simulation studies reveal the versatility of the platform in fabricating hybrid modulators as well as membrane lasers with novel lateral junctions.Characterizations of the InP membranes by transmission electron microscopy and electron channeling contrast imaging show high crystalline quality.Room-temperature lasing from an InP Fabry-Pérot laser further confirms the excellent optical quality.This platform therefore offers a promising,fully epitaxial solution for next-generation Si photonics technologies.
基金National Key R&D Program of China(2022YFB2803100)Engineering and Physical Sciences Research Council (EP/N013247/1,EP/T019697/1,EP/W035995/1)+3 种基金National Major Scientific Research Instrument Development Project (22127901)Shanghai Sailing Program(22YF1456700)China Scholarship Council (CSC)Royal Society (UF150325)。
文摘We report the design, fabrication, and characterization of a universal silicon PN junction ring resonator for C band error-free communication links operated up to 50 Gb/s with co-designed optical modulation and detection performance. The universal p-n junction ring device shows co-designed detection responsivity up to 0.84 A/W, in conjunction with a modulation efficiency of -4 V·mm and>8 d B optical modulation extinction ratio, enabling C band 50 Gb/s NRZ communication link with a bit error rate≤3×10^(-12).
