GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands(InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays o...GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands(InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the microdisk with a radius of 13.5 μm operating without a heatsink for cooling. A modulation current efficiency factor of 1.5 GHz∕mA1∕2 was estimated.展开更多
The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes.Owing to the total internal reflection of light on the sidewalls,a high Q-factor is achieved until the diam...The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes.Owing to the total internal reflection of light on the sidewalls,a high Q-factor is achieved until the diameter is comparable to the wavelength.The light emission predominantly occurs in the plane of the structure,which facilitates the microlaser integration with other elements.We focus on microdisk lasers with various types of the In(Ga)As quantum dots(QDs).Deep localization of charge carriers in spatilly separated regions suppresses the lateral diffusion and makes it possible to overcome the undesirable effect of non-adiative recombination in deep mesas.Thus,using conventional epitaxial structures and relatively simple post-growth processing methods,it is possible to realize small microlasers capable of operating without temperature stabilization at elevated temperatures.The low sensitivity of QDs to epitaxial and manufacturing defects allows fabricating microlasers using IIV heterostructures grown on silicon.展开更多
文摘GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands(InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the microdisk with a radius of 13.5 μm operating without a heatsink for cooling. A modulation current efficiency factor of 1.5 GHz∕mA1∕2 was estimated.
基金This work was supported by the Russia Science Foundation under grant 19-72-30010.
文摘The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes.Owing to the total internal reflection of light on the sidewalls,a high Q-factor is achieved until the diameter is comparable to the wavelength.The light emission predominantly occurs in the plane of the structure,which facilitates the microlaser integration with other elements.We focus on microdisk lasers with various types of the In(Ga)As quantum dots(QDs).Deep localization of charge carriers in spatilly separated regions suppresses the lateral diffusion and makes it possible to overcome the undesirable effect of non-adiative recombination in deep mesas.Thus,using conventional epitaxial structures and relatively simple post-growth processing methods,it is possible to realize small microlasers capable of operating without temperature stabilization at elevated temperatures.The low sensitivity of QDs to epitaxial and manufacturing defects allows fabricating microlasers using IIV heterostructures grown on silicon.
