Simulations of sputtering yield of Ti and Zr under energetic particle bombardments at room temperature (300 K)have been done by using a Fortran code TMNUCSP developed from the modified thermal spike model~[1].
Experimental results showed that energetic ion induced phase change in a solid could be achieved not only by irradiation at high fluences but also by singe ion induced huge electronic excitations. The phase change pro...Experimental results showed that energetic ion induced phase change in a solid could be achieved not only by irradiation at high fluences but also by singe ion induced huge electronic excitations. The phase change produced in the later condition is just along individual ion latent tracks。Poecently, we have proposed a novel technique,“low energy ion implantation + swift heavy ion irradiation”, for synthesizing new structures in atom mixed materials in which more attention was paid to the dense electronic excitations effect induced by theincident ions. In the present work, the technique[2} was used to investigate huge electronic excitations展开更多
Since Liu and Cohen predicted that the bulk modulus of carbon nitride films with the structure of β-C3N4 are comparable or even surpass those of diamond, intensive experimental efforts have been done to synthesize th...Since Liu and Cohen predicted that the bulk modulus of carbon nitride films with the structure of β-C3N4 are comparable or even surpass those of diamond, intensive experimental efforts have been done to synthesize this new material. Various kinds of synthesized methods have been applied to fabricate carbon nitride films, whereas samples with sufficient amounts of crystallized C3N4 structure or with mechanical properties comparable to the predicted values have not been reported. From the basic of ion-solid interaction, Wang, et al. have proposed a novel method, "low energy ion implantation + swift heavy ion irradiation", for synthesizing compound in atom mixed materials. This method has been used in the present work.展开更多
The SiO2 films was firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 4.57 MeV/u Pb ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to the dos...The SiO2 films was firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 4.57 MeV/u Pb ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to the dose ranging from 2.0×10^17C/cm^2 to 8.6×10^17C/cm^2,The irradiation was performed at CARIL-GANIL,Caen,France to the fluence ranging from 5.0×10^11Pb/cm^2 to 3.8×10^12Pb/cm^2.Some parameters were given in Table 1(TRIM 96 calculation)。展开更多
文摘Simulations of sputtering yield of Ti and Zr under energetic particle bombardments at room temperature (300 K)have been done by using a Fortran code TMNUCSP developed from the modified thermal spike model~[1].
文摘Experimental results showed that energetic ion induced phase change in a solid could be achieved not only by irradiation at high fluences but also by singe ion induced huge electronic excitations. The phase change produced in the later condition is just along individual ion latent tracks。Poecently, we have proposed a novel technique,“low energy ion implantation + swift heavy ion irradiation”, for synthesizing new structures in atom mixed materials in which more attention was paid to the dense electronic excitations effect induced by theincident ions. In the present work, the technique[2} was used to investigate huge electronic excitations
文摘Since Liu and Cohen predicted that the bulk modulus of carbon nitride films with the structure of β-C3N4 are comparable or even surpass those of diamond, intensive experimental efforts have been done to synthesize this new material. Various kinds of synthesized methods have been applied to fabricate carbon nitride films, whereas samples with sufficient amounts of crystallized C3N4 structure or with mechanical properties comparable to the predicted values have not been reported. From the basic of ion-solid interaction, Wang, et al. have proposed a novel method, "low energy ion implantation + swift heavy ion irradiation", for synthesizing compound in atom mixed materials. This method has been used in the present work.
文摘The SiO2 films was firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 4.57 MeV/u Pb ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to the dose ranging from 2.0×10^17C/cm^2 to 8.6×10^17C/cm^2,The irradiation was performed at CARIL-GANIL,Caen,France to the fluence ranging from 5.0×10^11Pb/cm^2 to 3.8×10^12Pb/cm^2.Some parameters were given in Table 1(TRIM 96 calculation)。
