A simple method to determine the traps＇ density of state （DOS） in organic light-emitting diodes （OLEDs） by manipulating the current-voltage （I-V） characteristic of the devices at room temperature is introduced....A simple method to determine the traps＇ density of state （DOS） in organic light-emitting diodes （OLEDs） by manipulating the current-voltage （I-V） characteristic of the devices at room temperature is introduced. In particular, the trap-dependent space-charge limited current formula is simplified to obtain effective density of traps. In this study, poly[（9,9-di-n-octylfluorenyl-2,7-diyl）-alt-（benzo[2,1,3]thiadiazol-4,8-diyl）] （F8BT） and 2- Methoxy-5-（3＇, 7＇-dimethyloctyloxy） benzene-l,4-diacetonitrile （0C1 Clo-PPV） are selected as the OLEDs emissive layer. The trap DOS of F8BT- and OC1Clo-PPV-based OLEDs are calculated in the magnitudes of 1024 m^-3 and 1023 m^-3, respectively. In addition, the results agree with the other conventional method which is used to determine the trap DOS in OLEDs. This calculation technique may serve as a robust and reliable approach to obtain the trap DOS in OLEDs at room temperature.展开更多
基金Supported by the Science Fund under Grant No SF019-2013the Fundamental Research Grant Scheme under Grant No FP033-2013B+1 种基金the Postgraduate Research Fund under Grant No PG107-2015Athe University Malaya Research Grant under Grant No RP026B-15AFR
文摘A simple method to determine the traps＇ density of state （DOS） in organic light-emitting diodes （OLEDs） by manipulating the current-voltage （I-V） characteristic of the devices at room temperature is introduced. In particular, the trap-dependent space-charge limited current formula is simplified to obtain effective density of traps. In this study, poly[（9,9-di-n-octylfluorenyl-2,7-diyl）-alt-（benzo[2,1,3]thiadiazol-4,8-diyl）] （F8BT） and 2- Methoxy-5-（3＇, 7＇-dimethyloctyloxy） benzene-l,4-diacetonitrile （0C1 Clo-PPV） are selected as the OLEDs emissive layer. The trap DOS of F8BT- and OC1Clo-PPV-based OLEDs are calculated in the magnitudes of 1024 m^-3 and 1023 m^-3, respectively. In addition, the results agree with the other conventional method which is used to determine the trap DOS in OLEDs. This calculation technique may serve as a robust and reliable approach to obtain the trap DOS in OLEDs at room temperature.
