The short-period eclipsing binary AP Dor’s first in-depth and multiband photometric solutions are presented.We made use of our eight nights of ground-based opportunity at a southern hemisphere observatory,and twelve ...The short-period eclipsing binary AP Dor’s first in-depth and multiband photometric solutions are presented.We made use of our eight nights of ground-based opportunity at a southern hemisphere observatory,and twelve sectors of TESS observations.We extracted eight and 1322 minima from our observations and TESS,respectively.We suggest a new linear ephemeris based on the trend of orbital period variations using the Markov chain Monte Carlo(MCMC)approach.The PHysics Of Eclipsing BinariEs(PHOEBE)Python code and the MCMC approach were utilized for the light curve analysis.This system did not require a starspot for the light curve solutions.We calculated the absolute parameters of the system by applying the Gaia DR3 parallax method.The orbital angular momentum(J_(0))of AP Dor indicates that this system is located in a region corresponding to contact binaries.According to our results,this system is an overcontact binary system with a mass ratio of 0.584,a fillout factor of 48%,and an inclination of 53°.The positions of component stars in the AP Dor system on the Hertzsprung–Russell diagram are found.展开更多
This study proposes a new generation of floating gate transistors(FGT)with a novel built-in security feature.The new device has applications in guarding the IC chips against the current reverse engineering techniques,...This study proposes a new generation of floating gate transistors(FGT)with a novel built-in security feature.The new device has applications in guarding the IC chips against the current reverse engineering techniques,including scanning capacitance microscopy(SCM).The SCM measures the change in the C–V characteristic of the device as a result of placing a minute amount of charge on the floating gate,even in nano-meter scales.The proposed design only adds a simple processing step to the conventional FGT by adding an oppositely doped implanted layer to the substrate.This new structure was first analyzed theoretically and then a two-dimensional model was extracted to represent its C–V characteristic.Furthermore,this model was verified with a simulation.In addition,the C–V characteristics relevant to the SCM measurement of both conventional and the new designed FGT were compared to discuss the effectiveness of the added layer in masking the state of the transistor.The effect of change in doping concentration of the implanted layer on the C–V characteristics was also investigated.Finally,the feasibility of the proposed design was examined by comparing its I–V characteristics with the traditional FGT.展开更多
基金prepared by the Binary Systems of South and North (BSN) project (https://bsnp.info/)provided by the NASA Explorer Program.
文摘The short-period eclipsing binary AP Dor’s first in-depth and multiband photometric solutions are presented.We made use of our eight nights of ground-based opportunity at a southern hemisphere observatory,and twelve sectors of TESS observations.We extracted eight and 1322 minima from our observations and TESS,respectively.We suggest a new linear ephemeris based on the trend of orbital period variations using the Markov chain Monte Carlo(MCMC)approach.The PHysics Of Eclipsing BinariEs(PHOEBE)Python code and the MCMC approach were utilized for the light curve analysis.This system did not require a starspot for the light curve solutions.We calculated the absolute parameters of the system by applying the Gaia DR3 parallax method.The orbital angular momentum(J_(0))of AP Dor indicates that this system is located in a region corresponding to contact binaries.According to our results,this system is an overcontact binary system with a mass ratio of 0.584,a fillout factor of 48%,and an inclination of 53°.The positions of component stars in the AP Dor system on the Hertzsprung–Russell diagram are found.
文摘This study proposes a new generation of floating gate transistors(FGT)with a novel built-in security feature.The new device has applications in guarding the IC chips against the current reverse engineering techniques,including scanning capacitance microscopy(SCM).The SCM measures the change in the C–V characteristic of the device as a result of placing a minute amount of charge on the floating gate,even in nano-meter scales.The proposed design only adds a simple processing step to the conventional FGT by adding an oppositely doped implanted layer to the substrate.This new structure was first analyzed theoretically and then a two-dimensional model was extracted to represent its C–V characteristic.Furthermore,this model was verified with a simulation.In addition,the C–V characteristics relevant to the SCM measurement of both conventional and the new designed FGT were compared to discuss the effectiveness of the added layer in masking the state of the transistor.The effect of change in doping concentration of the implanted layer on the C–V characteristics was also investigated.Finally,the feasibility of the proposed design was examined by comparing its I–V characteristics with the traditional FGT.
