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Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots 被引量:3
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作者 N.V.KRYZHANOVSKAYA E.I.MOISEEV +12 位作者 F.I.ZUBOV A.M.MOZHAROV M.V.MAXIMOV N.A.KALYUZHNYY S.A.MINTAIROV m.m.kulagina S.A.BLOKHIN K.E.KUDRYAVTSEV A.N.YABLONSKIY S.V.MOROZOV YU.BERDNIKOV S.ROUVIMOV A.E.ZHUKOV 《Photonics Research》 SCIE EI CSCD 2019年第6期664-668,共5页
GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands(InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays o... GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands(InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the microdisk with a radius of 13.5 μm operating without a heatsink for cooling. A modulation current efficiency factor of 1.5 GHz∕mA1∕2 was estimated. 展开更多
关键词 Direct MODULATION CHARACTERISTICS quantum well-dots
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