Using the matrix method, spin-dependent tunneling properties such as barrier transparency, the degree of resonance polarization, and tunneling lifetime of electrons are examined in the non-magnetic/diluted magnetic se...Using the matrix method, spin-dependent tunneling properties such as barrier transparency, the degree of resonance polarization, and tunneling lifetime of electrons are examined in the non-magnetic/diluted magnetic semiconductor heterostructure. The effects of the double δ-potential and the magnetic field are discussed on the transport properties of the electrons. The introduction of double δ-potential shifts the resonance peak of polarization to the higher energy value. Both height and position of the δ-potential influence the degree of resonance polarization in the considered heterostructure. The increasing magnetic field enhances the spin-polarization.展开更多
The spin-dependent tunneling of light holes and heavy holes was analysed in a symmetrical heterostructure with externally applied electric and magnetic fields. The effects of the applied bias voltage, magnetic field a...The spin-dependent tunneling of light holes and heavy holes was analysed in a symmetrical heterostructure with externally applied electric and magnetic fields. The effects of the applied bias voltage, magnetic field and reverse bias were discussed for the polarization efficiency of light holes and heavy holes. The current density of spin-up and spin-down light holes increases as the bias voltage increases and reaches the saturation, whereas the current density of spin-up heavy holes is almost negligible. The applied bias voltage and the magnetic field highly influence the energy of resonance polarization, polarization efficiency, and the current density of heavy holes more than for the light holes.展开更多
文摘Using the matrix method, spin-dependent tunneling properties such as barrier transparency, the degree of resonance polarization, and tunneling lifetime of electrons are examined in the non-magnetic/diluted magnetic semiconductor heterostructure. The effects of the double δ-potential and the magnetic field are discussed on the transport properties of the electrons. The introduction of double δ-potential shifts the resonance peak of polarization to the higher energy value. Both height and position of the δ-potential influence the degree of resonance polarization in the considered heterostructure. The increasing magnetic field enhances the spin-polarization.
文摘The spin-dependent tunneling of light holes and heavy holes was analysed in a symmetrical heterostructure with externally applied electric and magnetic fields. The effects of the applied bias voltage, magnetic field and reverse bias were discussed for the polarization efficiency of light holes and heavy holes. The current density of spin-up and spin-down light holes increases as the bias voltage increases and reaches the saturation, whereas the current density of spin-up heavy holes is almost negligible. The applied bias voltage and the magnetic field highly influence the energy of resonance polarization, polarization efficiency, and the current density of heavy holes more than for the light holes.
