The chromium(Cr)films on silicon Si(100)substrate are prepared using DC magnetron sputtering technique at an argon gas pressure of 3 Torr for different applied powers(40—140 W).The chemical composition,the thicknesse...The chromium(Cr)films on silicon Si(100)substrate are prepared using DC magnetron sputtering technique at an argon gas pressure of 3 Torr for different applied powers(40—140 W).The chemical composition,the thicknesses and the structural characterization of the deposited Cr films are studied and analyzed using energy dispersive X-ray spectroscopy(EDX),scanning electron microscopy(SEM),and X-ray diffraction(XRD),respectively.Furthermore,the generated plasma parameters,including floating potential,plasma potential,electron density,ion density and electron temperature,have been measured,and the automated Langmuir probe is used for the Cr films deposition.The ion and metal fluxes are also determined.The results show that the Cr film thickness enhances with the higher applied power.The Cr deposited films properties are characterized and correlated with the measured plasma parameters.展开更多
文摘The chromium(Cr)films on silicon Si(100)substrate are prepared using DC magnetron sputtering technique at an argon gas pressure of 3 Torr for different applied powers(40—140 W).The chemical composition,the thicknesses and the structural characterization of the deposited Cr films are studied and analyzed using energy dispersive X-ray spectroscopy(EDX),scanning electron microscopy(SEM),and X-ray diffraction(XRD),respectively.Furthermore,the generated plasma parameters,including floating potential,plasma potential,electron density,ion density and electron temperature,have been measured,and the automated Langmuir probe is used for the Cr films deposition.The ion and metal fluxes are also determined.The results show that the Cr film thickness enhances with the higher applied power.The Cr deposited films properties are characterized and correlated with the measured plasma parameters.
