期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems
1
作者 Sh.G.Askerov L.K.Abdullayeva m.g.hasanov 《Journal of Semiconductors》 EI CAS CSCD 2020年第10期17-20,共4页
The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact(MSC)in the framework of the theory of complex systems.The effect of inhomogeneity of the different microstructures:p... The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact(MSC)in the framework of the theory of complex systems.The effect of inhomogeneity of the different microstructures:polycrystalline,monocrystalline,amorphous metal–semiconductor contact surface is investigated,considering a Schottky diode(SD)as a parallel connection of numerous subdiodes.It has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system,which consists of parallel connected numerous elementary contacts having different properties and parameters. 展开更多
关键词 Schottky diode metal–semiconductor contact current–voltage characteristics interfaces HETEROGENEITY complex systems
在线阅读 下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部