Transistor's invention revolutionized global society by spawning electronics industry. John Bardeen is among one of the inventors of transistor. He was a genius and one of the most influential semiconductor Physic...Transistor's invention revolutionized global society by spawning electronics industry. John Bardeen is among one of the inventors of transistor. He was a genius and one of the most influential semiconductor Physicist of 20 th century who won two Nobel prizes in Physics.展开更多
Semiconductor nanostructures have gained importance due to their potential application in future nano- electronic devices. For such applications, it is extremely important to understand the electrical properties of se...Semiconductor nanostructures have gained importance due to their potential application in future nano- electronic devices. For such applications, it is extremely important to understand the electrical properties of semi- conductor nanostructures. This review presents an overview of techniques to measure the electrical properties of individual and clusters of semiconductor nanostructures using microcopy based techniques or by fabricating metal- lic electrical contacts using lithography. Then it is shown that current-voltage （I-V） characteristics can be used to determine the conduction mechanism in these nanostructures. It has been explained that various material paramet- ers can be extracted from I-V characteristics. The frequently observed conduction mechanism in these nanostruc- tures such as thermally activated conduction, space charge limited current （SCLC）, hopping conduction, Poole Frenkel conduction, Schottky emission and Fowler Nordheim （FN） tunneling are explained in detail.展开更多
文摘Transistor's invention revolutionized global society by spawning electronics industry. John Bardeen is among one of the inventors of transistor. He was a genius and one of the most influential semiconductor Physicist of 20 th century who won two Nobel prizes in Physics.
文摘Semiconductor nanostructures have gained importance due to their potential application in future nano- electronic devices. For such applications, it is extremely important to understand the electrical properties of semi- conductor nanostructures. This review presents an overview of techniques to measure the electrical properties of individual and clusters of semiconductor nanostructures using microcopy based techniques or by fabricating metal- lic electrical contacts using lithography. Then it is shown that current-voltage （I-V） characteristics can be used to determine the conduction mechanism in these nanostructures. It has been explained that various material paramet- ers can be extracted from I-V characteristics. The frequently observed conduction mechanism in these nanostruc- tures such as thermally activated conduction, space charge limited current （SCLC）, hopping conduction, Poole Frenkel conduction, Schottky emission and Fowler Nordheim （FN） tunneling are explained in detail.
