We study the effect of strain on band structure and valley-dependent transport properties of graphene heterojunctions.It is found that valley-dependent separation of electrons can be achieved by utilizing strain and o...We study the effect of strain on band structure and valley-dependent transport properties of graphene heterojunctions.It is found that valley-dependent separation of electrons can be achieved by utilizing strain and on-site energies.In the presence of strain,the values of transmission can be effectively adjusted by changing the strengths of the strain,while the transport angle basically keeps unchanged.When an extra on-site energy is simultaneously applied to the central scattering region,not only are the electrons of valleys K and K'separated into two distinct transmission lobes in opposite transverse directions,but the transport angles of two valleys can be significantly changed.Therefore,one can realize an effective modulation of valley-dependent transport by changing the strength and stretch angle of the strain and on-site energies,which can be exploited for graphene-based valleytronics devices.展开更多
基金National Natural Science Foundation of China(Grant No.11574067)。
文摘We study the effect of strain on band structure and valley-dependent transport properties of graphene heterojunctions.It is found that valley-dependent separation of electrons can be achieved by utilizing strain and on-site energies.In the presence of strain,the values of transmission can be effectively adjusted by changing the strengths of the strain,while the transport angle basically keeps unchanged.When an extra on-site energy is simultaneously applied to the central scattering region,not only are the electrons of valleys K and K'separated into two distinct transmission lobes in opposite transverse directions,but the transport angles of two valleys can be significantly changed.Therefore,one can realize an effective modulation of valley-dependent transport by changing the strength and stretch angle of the strain and on-site energies,which can be exploited for graphene-based valleytronics devices.
