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Device and circuit analysis of a sub 20 nm double gate MOSFET with gate stack using a look-up-table-based approach
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作者 S Chakraborty A Dasgupta +3 位作者 R Das m kar A Kundu C K Sarkar 《Journal of Semiconductors》 EI CAS CSCD 2017年第12期37-41,共5页
In this paper, we explore the possibility of mapping devices designed in TCAD environment to its modeled version developed in cadence virtuoso environment using a look-up table (LUT) approach. Circuit simu- lation o... In this paper, we explore the possibility of mapping devices designed in TCAD environment to its modeled version developed in cadence virtuoso environment using a look-up table (LUT) approach. Circuit simu- lation of newly designed devices in TCAD environment is a very slow and tedious process involving complex scripting. Hence, the LUT based modeling approach has been proposed as a faster and easier alternative in ca- dence environment. The LUTs are prepared by extracting data from the device characteristics obtained from device simulation in TCAD. A comparative study is shown between the TCAD simulation and the LUT-based alternative to showcase the accuracy of modeled devices. Finally the look-up table approach is used to evaluate the perform- ance of circuits implemented using 14 nm nMOSFET. 展开更多
关键词 14 nm double gate MOSFET look-up table VerilogA
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