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Effect of layer sliding on the interfacial electronic properties of intercalated silicene/indium selenide van der Waals heterostructure
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作者 masood Yousaf m W Younis +3 位作者 ahmed S Jbara m Junaid Iqbal Khan G murtaza m a saeed 《Communications in Theoretical Physics》 SCIE CAS CSCD 2022年第3期112-118,共7页
Methods capable of tuning the properties of van der Waals(vdW)layered materials in a controlled and reversible manner are highly desirable.Interfacial electronic properties of two-dimensional vdW heterostructure consi... Methods capable of tuning the properties of van der Waals(vdW)layered materials in a controlled and reversible manner are highly desirable.Interfacial electronic properties of two-dimensional vdW heterostructure consisting of silicene and indium selenide(InSe)have been calculated using density functional theory-based computational code.Furthermore,in order to vary the aforementioned properties,silicene is slid over a InSe layer in the presence of Li intercalation.On intercalation of the heterostructure,the buckling parameter associated with the corrugation of silicene decreases from 0.44A to 0.36A,whereas the InSe structure remains unaffected.Potential energy scans reveal a significant increase in the sliding energy barrier for the case of intercalated heterostructure as compared with the unintercalated heterostructure.The sliding of the silicene encounters the maximum energy barrier of 0.14 eV.Anisotropic analysis shows the noteworthy differences between calculated in-plane and out-of-plane part of dielectric function.A variation of the planar average charge density difference,dipole charge transfer and dipole moment have been discussed to elucidate the usability spectrum of the heterostructure.The employed approach based on intercalation and layer sliding can be effectively utilized for obtaining next-generation multifunctional devices. 展开更多
关键词 vdW heterostructure intercalation tuning of properties layer sliding interfacial electronic properties
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Effect of size and indium-composition on linear and nonlinear optical absorption of InGaN/GaN lens-shaped quantum dot
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作者 ahmed S Jbara Zulkafli Othaman m a saeed 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第5期380-387,共8页
Based on the Schr ¨odinger equation for envelope function in the effective mass approximation, linear and nonlinear optical absorption coefficients in a multi-subband lens quantum dot are investigated. The effect... Based on the Schr ¨odinger equation for envelope function in the effective mass approximation, linear and nonlinear optical absorption coefficients in a multi-subband lens quantum dot are investigated. The effects of quantum dot size on the interband and intraband transitions energy are also analyzed. The finite element method is used to calculate the eigenvalues and eigenfunctions. Strain and In-mole-fraction effects are also studied, and the results reveal that with the decrease of the In-mole fraction, the amplitudes of linear and nonlinear absorption coefficients increase. The present computed results show that the absorption coefficients of transitions between the first excited states are stronger than those of the ground states. In addition, it has been found that the quantum dot size affects the amplitudes and peak positions of linear and nonlinear absorption coefficients while the incident optical intensity strongly affects the nonlinear absorption coefficients. 展开更多
关键词 linear and nonlinear optical absorption coefficients lens quantum dot finite element method
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