Gallium nitride(GaN)-based ultraviolet(UV)photodetectors(PDs)are promising for advanced UV detection.However,the development faces challenges in cost reduction,process complexity,and the need for enhanced detection pe...Gallium nitride(GaN)-based ultraviolet(UV)photodetectors(PDs)are promising for advanced UV detection.However,the development faces challenges in cost reduction,process complexity,and the need for enhanced detection performance.In this study,an alternating current photovoltaic(AC PV)effect was identified in a GaN Schottky junction,achieving UV photoelectric responsivity improvements of up to two orders of magnitude and superior response speed compared to conventional photocurrent.Heating tests confirm PD stability at 600°C,attributable to the AC PV effect that maintains high response speed.Additionally,integrating a magnetically levitated structure with the UV PD enables a highly sensitive photoelectric wind speed sensor with an ultra-low startup wind speed of 0.5m/s and a rapid response time of 25.3 ms.This study offers a promising approach for fabricating high-performance UV photoelectric devices and precise monitoring in challenging environments.展开更多
基金supported by the Beijing Natural Science Foundation(L247036)the National Natural Science Foundation of China(62574025,52192610 and 52192613)the National Key R&D Project from Ministry of Science and Technology(2021YFA1201601).
文摘Gallium nitride(GaN)-based ultraviolet(UV)photodetectors(PDs)are promising for advanced UV detection.However,the development faces challenges in cost reduction,process complexity,and the need for enhanced detection performance.In this study,an alternating current photovoltaic(AC PV)effect was identified in a GaN Schottky junction,achieving UV photoelectric responsivity improvements of up to two orders of magnitude and superior response speed compared to conventional photocurrent.Heating tests confirm PD stability at 600°C,attributable to the AC PV effect that maintains high response speed.Additionally,integrating a magnetically levitated structure with the UV PD enables a highly sensitive photoelectric wind speed sensor with an ultra-low startup wind speed of 0.5m/s and a rapid response time of 25.3 ms.This study offers a promising approach for fabricating high-performance UV photoelectric devices and precise monitoring in challenging environments.
