Prion diseases are a group of neurodegenerative diseases that are fatal. The study of these unique diseases in China is hampered by a lack of resources. Amongst the most important resources for biological study are mo...Prion diseases are a group of neurodegenerative diseases that are fatal. The study of these unique diseases in China is hampered by a lack of resources. Amongst the most important resources for biological study are monoclonal antibodies. Here, we characterize a panel of monoclonal antibodies specific for cellular prion protein by enzyme-linked immunosorbent assay(ELISA), immunofluorescent staining, flow cytometry, and western blotting. We identify several antibodies that can be used for specific applications and we demonstrate that there is no prion protein expression in human pancreatic ductal epithelial cells(HPDC).展开更多
To date,the benchmark Bi_(2)Te_(3)-based alloys are still the only commercial material system used for ther-moelectric solid-state refrigeration.Nonetheless,the conspicuous performance imbalance between the p-type Bi_...To date,the benchmark Bi_(2)Te_(3)-based alloys are still the only commercial material system used for ther-moelectric solid-state refrigeration.Nonetheless,the conspicuous performance imbalance between the p-type Bi_(2-x)Sb_(x)Te_(3)and n-type Bi_(2)Te_(3-x)Se_(x) legs has become a major obstacle for the improvement of cooling devices to achieve higher efficiency.In our previous study,novel n-type Bi_(2-x)Sb_(x)Te_(3)alloy has been pro-posed via manipulating donor-like effect as an alternative to mainstream n-type Bi_(2)Te_(3-x)Se_(x).However,the narrow bandgap of Bi_(2-x)Sb_(x)Te_(3)provoked severe bipolar effect that constrained the further improvement of zT near room temperature.Herein,we have implemented band gap engineering in n-type Bi_(1.5)Sb_(0.5)Te_(3)by employing isovalent Se substitution to inhibit the undesired intrinsic excitation and achieve the dis-tinguished room-temperature zT.First,the preferential occupancy of Se at Te^(2)site appropriately enlarges the band gap,thereby concurrently improving the Seebeck coefficient and depressing the bipolar thermal conductivity.In addition,the Se alloying mildly suppresses the compensation mechanism and essentially preserves the already optimized carrier concentration,which maintains the peak zT near room tempera-ture.Moreover,the large strain field and mass fluctuation generated by Se alloying leads to the remark-able reduction of lattice thermal conductivity.Accordingly,the zT value of Bi_(1.5)Sb_(0.5)Te_(2.8)Se_(0.2)reaches 1.0 at 300 K and peaks 1.1 at 360 K,which surpasses that of most well-known room-temperature n-type thermoelectric materials.These results pave the way for n-type Bi_(2-x)Sb_(x)Te_(3)alloys to become a new and promising top candidate for large-scale solid-state cooling applications.展开更多
In thermoelectrics,phase engineering serves a crucial function in deter-mining the power factor by affecting the band degeneracy.However,for low-symmetry compounds,the mainstream one-step phase manipulation strategy,d...In thermoelectrics,phase engineering serves a crucial function in deter-mining the power factor by affecting the band degeneracy.However,for low-symmetry compounds,the mainstream one-step phase manipulation strategy,depending solely on the valley or orbital degeneracy,is inadequate to attain a high density-of-states effective mass and exceptional zT.Here,we employ a distinctive two-step phase manipulation strategy through stepwise tailoring chemical bonds in GeSe.Initially,we amplify the valley degeneracy via CdTe alloying,which elevates the crystal symmetry from a covalently bonded orthorhombic to a metavalently bonded rhombohedral phase by significantly suppressing the Peierls distortion.Subsequently,we incorporate Pb to trigger the convergence of multivalence bands and further enhance the density-of-states effective mass by moderately restraining the Peierls distortion.Additionally,the atypical metavalent bonding in rhombohedral GeSe enables a high Ge vacancy concentration and a small band effective mass,leading to increased carrier concentration and mobility.This weak chemical bond along with strong lattice anharmonicity also reduces lattice thermal conductivity.Consequently,this unique property ensemble contributes to an outstanding zT of 0.9 at 773 K for Geo.8oPbo.2oSe(CdTe)o.25.This work underscores the pivotal role of the two-step phase manipulation by stepwise tailoring of chemical bonds in improving the thermoelectric performance of p-bonded chalcogenides.展开更多
Exploration of metastable phases holds profound implications for functional materials.Herein,we engineer the metastable phase to enhance the thermo-electric performance of germanium selenide(GeSe)through tailoring the...Exploration of metastable phases holds profound implications for functional materials.Herein,we engineer the metastable phase to enhance the thermo-electric performance of germanium selenide(GeSe)through tailoring the chemical bonding mechanism.Initially,AgInTe2 alloying fosters a transition from stable orthorhombic to metastable rhombohedral phase in GeSe by substantially promoting p-state electron bonding to form metavalent bonding(MVB).Besides,extra Pb is employed to prevent a transition into a stable hexagonal phase at elevated temperatures by moderately enhancing the degree of MVB.The stabilization of the metastable rhombohedral phase generates an optimized bandgap,sharpened valence band edge,and stimulative band convergence compared to stable phases.This leads to decent carrier concentra-tion,improved carrier mobility,and enhanced density-of-state effective mass,culminating in a superior power factor.Moreover,lattice thermal conductivity is suppressed by pronounced lattice anharmonicity,low sound velocity,and strong phonon scattering induced by multiple defects.Consequently,a maximum zT of 1.0 at 773 K is achieved in(Ge_(0.98)Pb_(0.02)Se)_(0.875)(AgInTe_(2))_(0.125),resulting in a maximum energy conversion efficiency of 4.90%under the temperature difference of 500 K.This work underscores the significance of regulating MVB to stabilize metastable phases in chalcogenides.展开更多
基金the National Natural Sciences Foundation of China(81172376,31270209)the 100 talent-program of the Chinese Academy of Sciencesthe State Key Laboratory of Virology for financial support
文摘Prion diseases are a group of neurodegenerative diseases that are fatal. The study of these unique diseases in China is hampered by a lack of resources. Amongst the most important resources for biological study are monoclonal antibodies. Here, we characterize a panel of monoclonal antibodies specific for cellular prion protein by enzyme-linked immunosorbent assay(ELISA), immunofluorescent staining, flow cytometry, and western blotting. We identify several antibodies that can be used for specific applications and we demonstrate that there is no prion protein expression in human pancreatic ductal epithelial cells(HPDC).
基金The work is supported by the National Natural Science Foundation of China(No.52071218)Shenzhen Science and Technology Innovation Commission(Nos.20200731215211001,20200814110413001)Guangdong Basic and Applied Basic Research Foundation(No.2022A1515012492).The authors also appreciate the Instrumental Analysis Center of Shenzhen University.
文摘To date,the benchmark Bi_(2)Te_(3)-based alloys are still the only commercial material system used for ther-moelectric solid-state refrigeration.Nonetheless,the conspicuous performance imbalance between the p-type Bi_(2-x)Sb_(x)Te_(3)and n-type Bi_(2)Te_(3-x)Se_(x) legs has become a major obstacle for the improvement of cooling devices to achieve higher efficiency.In our previous study,novel n-type Bi_(2-x)Sb_(x)Te_(3)alloy has been pro-posed via manipulating donor-like effect as an alternative to mainstream n-type Bi_(2)Te_(3-x)Se_(x).However,the narrow bandgap of Bi_(2-x)Sb_(x)Te_(3)provoked severe bipolar effect that constrained the further improvement of zT near room temperature.Herein,we have implemented band gap engineering in n-type Bi_(1.5)Sb_(0.5)Te_(3)by employing isovalent Se substitution to inhibit the undesired intrinsic excitation and achieve the dis-tinguished room-temperature zT.First,the preferential occupancy of Se at Te^(2)site appropriately enlarges the band gap,thereby concurrently improving the Seebeck coefficient and depressing the bipolar thermal conductivity.In addition,the Se alloying mildly suppresses the compensation mechanism and essentially preserves the already optimized carrier concentration,which maintains the peak zT near room tempera-ture.Moreover,the large strain field and mass fluctuation generated by Se alloying leads to the remark-able reduction of lattice thermal conductivity.Accordingly,the zT value of Bi_(1.5)Sb_(0.5)Te_(2.8)Se_(0.2)reaches 1.0 at 300 K and peaks 1.1 at 360 K,which surpasses that of most well-known room-temperature n-type thermoelectric materials.These results pave the way for n-type Bi_(2-x)Sb_(x)Te_(3)alloys to become a new and promising top candidate for large-scale solid-state cooling applications.
基金National Natural Science Foundation of China(52071218)National Key R&D Program of China(2021YFB1507403)+2 种基金Shenzhen University 2035 Pro-gram for Excellent Research( 00000218)China Postdoctoral Science Foundation(2022M722170)Y.Y.and M.W.acknowledge support from the German Research Founda tion(Deutsche Forchungsgemeinschaft,DFG)within project SFB917.Y.Y.acknowledges financial support under the Excellence Strategy of the Federal Govemment and the L ander within the ERS RWTH StartUp grant(Grant No.StUpPD_392-21).The authors also appre-ciate the Instrumental Analysis Center of Shenzhen University.
文摘In thermoelectrics,phase engineering serves a crucial function in deter-mining the power factor by affecting the band degeneracy.However,for low-symmetry compounds,the mainstream one-step phase manipulation strategy,depending solely on the valley or orbital degeneracy,is inadequate to attain a high density-of-states effective mass and exceptional zT.Here,we employ a distinctive two-step phase manipulation strategy through stepwise tailoring chemical bonds in GeSe.Initially,we amplify the valley degeneracy via CdTe alloying,which elevates the crystal symmetry from a covalently bonded orthorhombic to a metavalently bonded rhombohedral phase by significantly suppressing the Peierls distortion.Subsequently,we incorporate Pb to trigger the convergence of multivalence bands and further enhance the density-of-states effective mass by moderately restraining the Peierls distortion.Additionally,the atypical metavalent bonding in rhombohedral GeSe enables a high Ge vacancy concentration and a small band effective mass,leading to increased carrier concentration and mobility.This weak chemical bond along with strong lattice anharmonicity also reduces lattice thermal conductivity.Consequently,this unique property ensemble contributes to an outstanding zT of 0.9 at 773 K for Geo.8oPbo.2oSe(CdTe)o.25.This work underscores the pivotal role of the two-step phase manipulation by stepwise tailoring of chemical bonds in improving the thermoelectric performance of p-bonded chalcogenides.
基金National Key R&D Program of China,Grant/Award Number:2021YFB1507403National Natural Science Foundation of China,Grant/Award Number:52071218+1 种基金China Postdoctoral Science Foundation,Grant/Award Number:2022M722170Shenzhen University 2035 Program for Excellent Research,Grant/Award Number:00000218。
文摘Exploration of metastable phases holds profound implications for functional materials.Herein,we engineer the metastable phase to enhance the thermo-electric performance of germanium selenide(GeSe)through tailoring the chemical bonding mechanism.Initially,AgInTe2 alloying fosters a transition from stable orthorhombic to metastable rhombohedral phase in GeSe by substantially promoting p-state electron bonding to form metavalent bonding(MVB).Besides,extra Pb is employed to prevent a transition into a stable hexagonal phase at elevated temperatures by moderately enhancing the degree of MVB.The stabilization of the metastable rhombohedral phase generates an optimized bandgap,sharpened valence band edge,and stimulative band convergence compared to stable phases.This leads to decent carrier concentra-tion,improved carrier mobility,and enhanced density-of-state effective mass,culminating in a superior power factor.Moreover,lattice thermal conductivity is suppressed by pronounced lattice anharmonicity,low sound velocity,and strong phonon scattering induced by multiple defects.Consequently,a maximum zT of 1.0 at 773 K is achieved in(Ge_(0.98)Pb_(0.02)Se)_(0.875)(AgInTe_(2))_(0.125),resulting in a maximum energy conversion efficiency of 4.90%under the temperature difference of 500 K.This work underscores the significance of regulating MVB to stabilize metastable phases in chalcogenides.
