We present a system-level model with an on-chip temperature compensation technique for a CMOS-MEMS monolithic calorimetric flow sensing SoC.The model encompasses mechanical,thermal,and electrical domains to facilitate...We present a system-level model with an on-chip temperature compensation technique for a CMOS-MEMS monolithic calorimetric flow sensing SoC.The model encompasses mechanical,thermal,and electrical domains to facilitate the co-design of a MEMS sensor and CMOS interface circuits on the EDA platform.The compensation strategy is implemented on-chip with a variable temperature difference heating circuit.Results show that the linear programming for the low-temperature drift in the SoC output is characterized by a compensation resistor Rc with a resistance value of 748.21Ωand a temperature coefficient of resistance of 3.037×10−3℃^(−1) at 25℃.Experimental validation demonstrates that within an ambient temperature range of 0–50℃ and a flow range of 0-10 m/s,the temperature drift of the sensor is reduced to±1.6%,as compared to±8.9%observed in a counterpart with the constant temperature difference circuit.Therefore,this on-chip temperature-compensated CMOS-MEMS flow sensing SoC is promising for low-cost sensing applications such as respiratory monitoring and smart energy-efficient buildings.展开更多
基金supported by the National Natural Science Foundation of China(62474115,52105582)Natural Science Foundation of Guangdong Province(2024A1515030026,2022A1515010894)+1 种基金Fundamental Research Foundation of Shenzhen(JCYJ20210324095210030,JCYJ20220818095810023,ZDSYS20220527171402005)the State Key Laboratory of Radio Frequency Heterogeneous Integration(Independent Scientific Research Program No.2024013)for Linze Hong,Ke Xiao,Xiangyu Song,and Wei Xu.
文摘We present a system-level model with an on-chip temperature compensation technique for a CMOS-MEMS monolithic calorimetric flow sensing SoC.The model encompasses mechanical,thermal,and electrical domains to facilitate the co-design of a MEMS sensor and CMOS interface circuits on the EDA platform.The compensation strategy is implemented on-chip with a variable temperature difference heating circuit.Results show that the linear programming for the low-temperature drift in the SoC output is characterized by a compensation resistor Rc with a resistance value of 748.21Ωand a temperature coefficient of resistance of 3.037×10−3℃^(−1) at 25℃.Experimental validation demonstrates that within an ambient temperature range of 0–50℃ and a flow range of 0-10 m/s,the temperature drift of the sensor is reduced to±1.6%,as compared to±8.9%observed in a counterpart with the constant temperature difference circuit.Therefore,this on-chip temperature-compensated CMOS-MEMS flow sensing SoC is promising for low-cost sensing applications such as respiratory monitoring and smart energy-efficient buildings.
