Biologically inspired neuromorphic perceptual systems have great potential for efficient processing of multisensory signals from the physical world.Recently,artificial neurons constructed by memristor have been develo...Biologically inspired neuromorphic perceptual systems have great potential for efficient processing of multisensory signals from the physical world.Recently,artificial neurons constructed by memristor have been developed with good biological plausibility and density,but the filament-type memristor is limited by undesirable temporal and spatial variations,high electroforming voltage and limited reproducibility and the Mott insulator type memristor suffer from large driving current.Here,we propose a novel antiferroelectric artificial neu-ron(AFEAN)based on the intrinsic polarization and depolarization of AgNbO_(3)(ANO)antiferroelectric(AFE)films to address these challenges.The antiferroelectric memristor exhibits low power consumption(8.99 nW),excel-lent durability(-10^(5))and high stability.Using such an AFEAN,a spike-based antiferroelectric neuromorphic perception system(AFENPS)has been designed,which can encode light level and temperature signals into spikes,and further construct a spiking neural network(SNN)(784×196×10)for optical image classification and thermal imaging classification,achieving 95.34%and 95.76%recognition accuracy on the MNIST dataset,respectively.This work paves the way for the simulation of spiking neurons using antiferro-electric materials and promising a promising method for the development of highly efficient hardware for neuromorphic perception systems.展开更多
Memristors have received much attention for their ability to achieve multi-level storage and synaptic learning.However,the main factor that hinders the application of memristors to simulate neural synapses is the inst...Memristors have received much attention for their ability to achieve multi-level storage and synaptic learning.However,the main factor that hinders the application of memristors to simulate neural synapses is the instability of the formation and breakage of conductive filaments inside traditional memristors,which makes it difficult to simulate the function of biological synapses in practice.However,the resistance change of ferroelectric memristors relies on the polarization inversion of the ferroelectric thin film,thus avoiding the above problem.In this study,a Pd/HfAlO/LSMO/STO/Si ferroelectric memristor is proposed,which can achieve resistive switching properties through the combined action of ferroelectricity and oxygen vacancies.The I−V curves show that the device has good stability and uniformity.In addition,the effect of pulse sequence modulation on the conductance was investigated,and the biological synaptic function and learning behavior were simulated successfully.The results of the above studies provide a basis for the development of ferroelectric memristors with neurosynaptic-like behaviors.展开更多
基金Funding information National Key R&D Plan“Nano Frontier”Key Special Project,Grant/Award Number:2021YFA1200502Cultivation Projects of National Major R&D Project,Grant/Award Number:92164109+15 种基金National Natural Science Foundation of China,Grant/Award Numbers:61874158,62004056,62104058Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences,Grant/Award Number:XDB44000000-7Key Projects Supported by the Regional Innovation and Development Joint Fund,Grant/Award Number:U23A20365Hebei Province High-Level Talent Funding Project,Grant/Award Number:B20231003Yanzhao Young Scientist Project of Hebei Province,Grant/Award Number:F2023201076Key R&D Plan Projects in Hebei Province,Grant/Award Number:22311101DHebei Basic Research Special Key Project,Grant/Award Number:F2021201045Support Program for the Top Young Talents of Hebei Province,Grant/Award Number:70280011807Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province,Grant/Award Number:SLRC2019018Natural Science Foundation of Hebei Province,Grant/Award Numbers:F2022201054,F2021201022,F2022201002,F2021201045Interdisciplinary Research Program of Natural Science of Hebei University,Grant/Award Number:DXK202101Institute of Life Sciences and Green Development,Grant/Award Number:521100311Outstanding Young Scientific Research and Innovation Team of Hebei University,Grant/Award Number:605020521001Special Support Funds for National High Level Talents,Grant/Award Number:041500120001Advanced Talents Incubation Program of the Hebei University,Grant/Award Numbers:521000981426,521100221071,521000981363,521100224232Science and Technology Project of Hebei Education Department,Grant/Award Numbers:QN2020178,QN2021026。
文摘Biologically inspired neuromorphic perceptual systems have great potential for efficient processing of multisensory signals from the physical world.Recently,artificial neurons constructed by memristor have been developed with good biological plausibility and density,but the filament-type memristor is limited by undesirable temporal and spatial variations,high electroforming voltage and limited reproducibility and the Mott insulator type memristor suffer from large driving current.Here,we propose a novel antiferroelectric artificial neu-ron(AFEAN)based on the intrinsic polarization and depolarization of AgNbO_(3)(ANO)antiferroelectric(AFE)films to address these challenges.The antiferroelectric memristor exhibits low power consumption(8.99 nW),excel-lent durability(-10^(5))and high stability.Using such an AFEAN,a spike-based antiferroelectric neuromorphic perception system(AFENPS)has been designed,which can encode light level and temperature signals into spikes,and further construct a spiking neural network(SNN)(784×196×10)for optical image classification and thermal imaging classification,achieving 95.34%and 95.76%recognition accuracy on the MNIST dataset,respectively.This work paves the way for the simulation of spiking neurons using antiferro-electric materials and promising a promising method for the development of highly efficient hardware for neuromorphic perception systems.
基金supported by the Natural Science Foundation of Hebei Province (No.F2021201009)the National Natural Science Foundation of China (No.62104058)+3 种基金the Natural Science Foundation of Hebei Province (No.F2021201022)the Science and Technology Project of Hebei Education Department (No.QN2020178)the Foundation of President of Hebei University (No.XZJJ201910)Advanced Talents Incubation Program of the Hebei University (No.521000981362).
文摘Memristors have received much attention for their ability to achieve multi-level storage and synaptic learning.However,the main factor that hinders the application of memristors to simulate neural synapses is the instability of the formation and breakage of conductive filaments inside traditional memristors,which makes it difficult to simulate the function of biological synapses in practice.However,the resistance change of ferroelectric memristors relies on the polarization inversion of the ferroelectric thin film,thus avoiding the above problem.In this study,a Pd/HfAlO/LSMO/STO/Si ferroelectric memristor is proposed,which can achieve resistive switching properties through the combined action of ferroelectricity and oxygen vacancies.The I−V curves show that the device has good stability and uniformity.In addition,the effect of pulse sequence modulation on the conductance was investigated,and the biological synaptic function and learning behavior were simulated successfully.The results of the above studies provide a basis for the development of ferroelectric memristors with neurosynaptic-like behaviors.
