Solid-state batteries are widely recognized as the next-generation energy storage devices with high specific energy,high safety,and high environmental adaptability.However,the research and development of solid-state b...Solid-state batteries are widely recognized as the next-generation energy storage devices with high specific energy,high safety,and high environmental adaptability.However,the research and development of solid-state batteries are resource-intensive and time-consuming due to their complex chemical environment,rendering performance prediction arduous and delaying large-scale industrialization.Artificial intelligence serves as an accelerator for solid-state battery development by enabling efficient material screening and performance prediction.This review will systematically examine how the latest progress in using machine learning(ML)algorithms can be used to mine extensive material databases and accelerate the discovery of high-performance cathode,anode,and electrolyte materials suitable for solid-state batteries.Furthermore,the use of ML technology to accurately estimate and predict key performance indicators in the solid-state battery management system will be discussed,among which are state of charge,state of health,remaining useful life,and battery capacity.Finally,we will summarize the main challenges encountered in the current research,such as data quality issues and poor code portability,and propose possible solutions and development paths.These will provide clear guidance for future research and technological reiteration.展开更多
Soft electronics,which are designed to function under mechanical deformation(such as bending,stretching,and folding),have become essential in applications like wearable electronics,artificial skin,and brain-machine in...Soft electronics,which are designed to function under mechanical deformation(such as bending,stretching,and folding),have become essential in applications like wearable electronics,artificial skin,and brain-machine interfaces.Crystalline silicon is one of the most mature and reliable materials for high-performance electronics;however,its intrinsic brittleness and rigidity pose challenges for integrating it into soft electronics.Recent research has focused on overcoming these limitations by utilizing structural design techniques to impart flexibility and stretchability to Si-based materials,such as transforming them into thin nanomembranes or nanowires.This review summarizes key strategies in geometry engineering for integrating crystalline silicon into soft electronics,from the use of hard silicon islands to creating out-of-plane foldable silicon nanofilms on flexible substrates,and ultimately to shaping silicon nanowires using vapor-liquid-solid or in-plane solid-liquid-solid techniques.We explore the latest developments in Si-based soft electronic devices,with applications in sensors,nanoprobes,robotics,and brain-machine interfaces.Finally,the paper discusses the current challenges in the field and outlines future research directions to enable the widespread adoption of silicon-based flexible electronics.展开更多
Gate-all-around field-effect transistors(GAA-FETs)represent the leading-edge channel architecture for constructing state-of-the-art highperformance FETs.Despite the advantages offered by the GAA configuration,its appl...Gate-all-around field-effect transistors(GAA-FETs)represent the leading-edge channel architecture for constructing state-of-the-art highperformance FETs.Despite the advantages offered by the GAA configuration,its application to catalytic silicon nanowire(SiNW)channels,known for facile low-temperature fabrication and high yield,has faced challenges primarily due to issues with precise positioning and alignment.In exploring this promising avenue,we employed an in-plane solid–liquidsolid(IPSLS)growth technique to batch-fabricate orderly arrays of ultrathin SiNWs,with diameters of DNW=22.4±2.4 nm and interwire spacing of 90 nm.An in situ channel-releasing technique has been developed to well preserve the geometry integrity of suspended SiNW arrays.By optimizing the source/drain contacts,high-performance GAA-FET devices have been successfully fabricated,based on these catalytic SiNW channels for the first time,yielding a high on/off current ratio of 107 and a steep subthreshold swing of 66 mV dec−1,closing the performance gap between the catalytic SiNW-FETs and state-ofthe-art GAA-FETs fabricated by using advanced top-down EBL and EUV lithography.These results indicate that catalytic IPSLS SiNWs can also serve as the ideal 1D channels for scalable fabrication of high-performance GAA-FETs,well suited for monolithic 3D integrations.展开更多
Combining a progressive tandem junction design with a unique Si nanowire(SiNW)framework paves the way for the development of high‐onset‐potential photocathodes and enhancement of solar hydrogen production.Herein,a r...Combining a progressive tandem junction design with a unique Si nanowire(SiNW)framework paves the way for the development of high‐onset‐potential photocathodes and enhancement of solar hydrogen production.Herein,a radial tandem junction(RTJ)thin film water‐splitting photo‐cathode has been demonstrated experimentally for the first time.The photocathode is directly fab‐ricated on vapor‐liquid‐solid‐grown SiNWs and consists of two radially stacked p‐i‐n junctions,featuring hydrogenated amorphous silicon(a‐Si:H)as the outer absorber layer,which absorbs short wavelengths,and hydrogenated amorphous silicon germanium(a‐SiGe:H)as the inner layer,which absorbs long wavelengths.The randomly distributed SiNW framework enables highly efficient light‐trapping,which facilitates the use of very thin absorber layers of a‐Si:H(~50 nm)and a‐SiGe:H(~40 nm).In a neutral electrolyte(pH=7),the three‐dimensional(3D)RTJ photocathode delivers a high photocurrent onset of 1.15 V vs.the reversible hydrogen electrode(RHE),accompanied by a photocurrent of 2.98 mA/cm^(2) at 0 V vs.RHE,and an overall applied‐bias photon‐to‐current effi‐ciency of 1.72%.These results emphasize the promising role of 3D radial tandem technology in developing a new generation of durable,low‐cost,high‐onset‐potential photocathodes capable of large‐scale implementation。展开更多
Flexible electronic devices with compliant mechanical deformability and electrical reliability have been a focal point of research over the past decade,particularly in the fields of wearable devices,brain-computer int...Flexible electronic devices with compliant mechanical deformability and electrical reliability have been a focal point of research over the past decade,particularly in the fields of wearable devices,brain-computer interfaces(BCIs),and electronic skins.These emerging applications impose stringent requirements on flexible sensors,necessitating not only their ability to withstand dynamic strains and conform to irregular surfaces but also to ensure long-term stable monitoring.To meet these demands,onedimensional nanowires,with high aspect ratios,large surface-to-volume ratios,and programmable geometric engineering,are widely regarded as ideal candidates for constructing high-performance flexible sensors.Various innovative assembly techniques have enabled the effective integration of these nanowires with flexible substrates.More excitingly,semiconductor nanowires,prepared through low-cost and efficient catalytic growth methods,have been successfully employed in the fabrication of highly flexible and stretchable nanoprobes for intracellular sensing.Additionally,nanowire arrays can be deployed on the cerebral cortex to record and analyze neural activity,opening new avenues for the treatment of neurological disorders.This review systematically examines recent advancements in nanowire-based flexible sensing technologies applied to wearable electronics,BCIs,and electronic skins,highlighting key design principles,operational mechanisms,and technological milestones achieved through growth,assembly,and transfer processes.These developments collectively advance high-performance health monitoring,deepen our understanding of neural activities,and facilitate the creation of novel,flexible,and stretchable electronic skins.Finally,we also present a summary and perspectives on the current challenges and future opportunities for nanowirebased flexible sensors.展开更多
The engineering of microbial cell factories for the production of high-value chemicals from renewable resources presents several challenges,including the optimization of key enzymes,pathway fluxes and metabolic networ...The engineering of microbial cell factories for the production of high-value chemicals from renewable resources presents several challenges,including the optimization of key enzymes,pathway fluxes and metabolic networks.Addressing these challenges involves the development of synthetic auxotrophs,a strategy that links cell growth with enzyme properties or biosynthetic pathways.This linkage allows for the improvement of enzyme properties by in vivo directed enzyme evolution,the enhancement of metabolic pathway fluxes under growth pressure,and remodeling of metabolic networks through directed strain evolution.The advantage of employing synthetic auxotrophs lies in the power of growth-coupled selection,which is not only high-throughput but also labor-saving,greatly simplifying the development of both strains and enzymes.Synthetic auxotrophs play a pivotal role in advancing microbial cell factories,offering benefits from enzyme optimization to the manipulation of metabolic networks within single microbes.Furthermore,this strategy extends to coculture systems,enabling collaboration within microbial communities.This review highlights the recently developed applications of synthetic auxotrophs as microbial cell factories,and discusses future perspectives,aiming to provide a practical guide for growth-coupled models to produce value-added chemicals as part of a sustainable biorefinery.展开更多
Reconfigurable field-effect transistors(R-FETs)that can dynamically reconfigure the transistor polarity,from n-type to p-type channel or vice versa,represent a promising new approach to reduce the logic complexity and...Reconfigurable field-effect transistors(R-FETs)that can dynamically reconfigure the transistor polarity,from n-type to p-type channel or vice versa,represent a promising new approach to reduce the logic complexity and granularity of programmable electronics.Although R-FETs have been successfully demonstrated upon silicon nanowire(SiNW)channels,a pair of extra program gates is still needed to control the source/drain(S/D)contacts.In this work,we propose a rather simple single gate R-FET structure with an asymmetric S/D electrode contact,where the FET channel polarity can be altered by changing the sign of channel bias V_(ds).These R-FETs were fabricated upon an orderly array of planar SiNW channels,grown via in-plane solid-liquid-solid mechanism,and contacted by Ti/Al and Pt/Au at the S/D electrodes,respectively.Remarkably,this channel-bias-controlled R-FET strategy has been successfully testified and implemented upon both p-typedoped(with indium dopants)or n-type-doped(phosphorus)SiNW channels,whereas the R-FET prototypes demonstrate an impressive high I_(on/off) ratio of>10^(6) and a steep subthreshold swing of 79 mV/dec.These results indicate a rather simple,compact and generic enough R-FET strategy for the construction of a new generation of SiNW-based programmable and low-power electronics.展开更多
Crystalline silicon（c-Si） is unambiguously the most important semiconductor that underpins the development of modern microelectronics and optoelectronics, though the rigid and brittle nature of bulk c-Si makes it di...Crystalline silicon（c-Si） is unambiguously the most important semiconductor that underpins the development of modern microelectronics and optoelectronics, though the rigid and brittle nature of bulk c-Si makes it difficult to implement directly for stretchable applications. Fortunately, the one-dimensional（1 D） geometry, or the line-shape, of Si nanowire（SiNW） can be engineered into elastic springs, which indicates an exciting opportunity to fabricate highly stretchable 1 D c-Si channels. The implementation of such line-shape-engineering strategy demands both a tiny diameter of the SiNWs, in order to accommodate the strains under large stretching, and a precise growth location, orientation and path control to facilitate device integration. In this review, we will first introduce the recent progresses of an in-plane self-assembly growth of SiNW springs, via a new in-plane solid-liquidsolid（IPSLS） mechanism, where mono-like but elastic SiNW springs are produced by surface-running metal droplets that absorb amorphous Si thin film as precursor. Then, the critical growth control and engineering parameters, the mechanical properties of the SiNW springs and the prospects of developing c-Si based stretchable electronics, will be addressed. This efficient line-shape-engineering strategy of SiNW springs, accomplished via a low temperature batch-manufacturing, holds a strong promise to extend the legend of modern Si technology into the emerging stretchable electronic applications, where the high carrier mobility, excellent stability and established doping and passivation controls of c-Si can be well inherited.展开更多
It has been well known that the development of microelectronic and integrated circuit （IC）, mainly based on silicon materials, have changed the way of our life dramatically and accelerated the development and innova...It has been well known that the development of microelectronic and integrated circuit （IC）, mainly based on silicon materials, have changed the way of our life dramatically and accelerated the development and innovation of new technologies. With the increase of integration density in ICs, the gate lengths of transistors are now scaled down to 7 nm, leading to fundamental challenges to keep up with the Moore＇s law. One possible solution is to integrate optical circuits into the Si microelectronic platform to achieve high density electronic-photonic integration.展开更多
基金the National Key Research Program of China under granted No.92164201National Natural Science Foundation of China for Distinguished Young Scholars No.62325403+2 种基金Natural Science Foundation of Jiangsu Province(BK20230498)Jiangsu Funding Program for Excellent Postdoctoral Talent(2024ZB427)the National Natural Science Foundation of China(62304147).
文摘Solid-state batteries are widely recognized as the next-generation energy storage devices with high specific energy,high safety,and high environmental adaptability.However,the research and development of solid-state batteries are resource-intensive and time-consuming due to their complex chemical environment,rendering performance prediction arduous and delaying large-scale industrialization.Artificial intelligence serves as an accelerator for solid-state battery development by enabling efficient material screening and performance prediction.This review will systematically examine how the latest progress in using machine learning(ML)algorithms can be used to mine extensive material databases and accelerate the discovery of high-performance cathode,anode,and electrolyte materials suitable for solid-state batteries.Furthermore,the use of ML technology to accurately estimate and predict key performance indicators in the solid-state battery management system will be discussed,among which are state of charge,state of health,remaining useful life,and battery capacity.Finally,we will summarize the main challenges encountered in the current research,such as data quality issues and poor code portability,and propose possible solutions and development paths.These will provide clear guidance for future research and technological reiteration.
基金the National Natural Science Foundation of China under granted No.62104100National Key Research Program of China under No.92164201+1 种基金National Natural Science Foundation of China for Distinguished Young Scholars under No.62325403National Natural Science Foundation of China under No.61934004.
文摘Soft electronics,which are designed to function under mechanical deformation(such as bending,stretching,and folding),have become essential in applications like wearable electronics,artificial skin,and brain-machine interfaces.Crystalline silicon is one of the most mature and reliable materials for high-performance electronics;however,its intrinsic brittleness and rigidity pose challenges for integrating it into soft electronics.Recent research has focused on overcoming these limitations by utilizing structural design techniques to impart flexibility and stretchability to Si-based materials,such as transforming them into thin nanomembranes or nanowires.This review summarizes key strategies in geometry engineering for integrating crystalline silicon into soft electronics,from the use of hard silicon islands to creating out-of-plane foldable silicon nanofilms on flexible substrates,and ultimately to shaping silicon nanowires using vapor-liquid-solid or in-plane solid-liquid-solid techniques.We explore the latest developments in Si-based soft electronic devices,with applications in sensors,nanoprobes,robotics,and brain-machine interfaces.Finally,the paper discusses the current challenges in the field and outlines future research directions to enable the widespread adoption of silicon-based flexible electronics.
基金financial support received from the National Key Research Program of China under granted No.92164201the National Natural Science Foundation of China for Distinguished Young Scholars No.62325403the Fundamental Research Funds for the Central Universities,and the National Natural Science Foundation of China under No.61934004.
文摘Gate-all-around field-effect transistors(GAA-FETs)represent the leading-edge channel architecture for constructing state-of-the-art highperformance FETs.Despite the advantages offered by the GAA configuration,its application to catalytic silicon nanowire(SiNW)channels,known for facile low-temperature fabrication and high yield,has faced challenges primarily due to issues with precise positioning and alignment.In exploring this promising avenue,we employed an in-plane solid–liquidsolid(IPSLS)growth technique to batch-fabricate orderly arrays of ultrathin SiNWs,with diameters of DNW=22.4±2.4 nm and interwire spacing of 90 nm.An in situ channel-releasing technique has been developed to well preserve the geometry integrity of suspended SiNW arrays.By optimizing the source/drain contacts,high-performance GAA-FET devices have been successfully fabricated,based on these catalytic SiNW channels for the first time,yielding a high on/off current ratio of 107 and a steep subthreshold swing of 66 mV dec−1,closing the performance gap between the catalytic SiNW-FETs and state-ofthe-art GAA-FETs fabricated by using advanced top-down EBL and EUV lithography.These results indicate that catalytic IPSLS SiNWs can also serve as the ideal 1D channels for scalable fabrication of high-performance GAA-FETs,well suited for monolithic 3D integrations.
文摘Combining a progressive tandem junction design with a unique Si nanowire(SiNW)framework paves the way for the development of high‐onset‐potential photocathodes and enhancement of solar hydrogen production.Herein,a radial tandem junction(RTJ)thin film water‐splitting photo‐cathode has been demonstrated experimentally for the first time.The photocathode is directly fab‐ricated on vapor‐liquid‐solid‐grown SiNWs and consists of two radially stacked p‐i‐n junctions,featuring hydrogenated amorphous silicon(a‐Si:H)as the outer absorber layer,which absorbs short wavelengths,and hydrogenated amorphous silicon germanium(a‐SiGe:H)as the inner layer,which absorbs long wavelengths.The randomly distributed SiNW framework enables highly efficient light‐trapping,which facilitates the use of very thin absorber layers of a‐Si:H(~50 nm)and a‐SiGe:H(~40 nm).In a neutral electrolyte(pH=7),the three‐dimensional(3D)RTJ photocathode delivers a high photocurrent onset of 1.15 V vs.the reversible hydrogen electrode(RHE),accompanied by a photocurrent of 2.98 mA/cm^(2) at 0 V vs.RHE,and an overall applied‐bias photon‐to‐current effi‐ciency of 1.72%.These results emphasize the promising role of 3D radial tandem technology in developing a new generation of durable,low‐cost,high‐onset‐potential photocathodes capable of large‐scale implementation。
基金support received from the National Key Research Program of China(No.92164201)National Natural Science Foundation of China for Distinguished Young Scholars(No.62325403)+2 种基金Natural Science Foundation of Jiangsu Province(BK20230498)Jiangsu Funding Program for Excellent Postdoctoral Talent(2024ZB427)the National Natural Science Foundation of China(61934004).
文摘Flexible electronic devices with compliant mechanical deformability and electrical reliability have been a focal point of research over the past decade,particularly in the fields of wearable devices,brain-computer interfaces(BCIs),and electronic skins.These emerging applications impose stringent requirements on flexible sensors,necessitating not only their ability to withstand dynamic strains and conform to irregular surfaces but also to ensure long-term stable monitoring.To meet these demands,onedimensional nanowires,with high aspect ratios,large surface-to-volume ratios,and programmable geometric engineering,are widely regarded as ideal candidates for constructing high-performance flexible sensors.Various innovative assembly techniques have enabled the effective integration of these nanowires with flexible substrates.More excitingly,semiconductor nanowires,prepared through low-cost and efficient catalytic growth methods,have been successfully employed in the fabrication of highly flexible and stretchable nanoprobes for intracellular sensing.Additionally,nanowire arrays can be deployed on the cerebral cortex to record and analyze neural activity,opening new avenues for the treatment of neurological disorders.This review systematically examines recent advancements in nanowire-based flexible sensing technologies applied to wearable electronics,BCIs,and electronic skins,highlighting key design principles,operational mechanisms,and technological milestones achieved through growth,assembly,and transfer processes.These developments collectively advance high-performance health monitoring,deepen our understanding of neural activities,and facilitate the creation of novel,flexible,and stretchable electronic skins.Finally,we also present a summary and perspectives on the current challenges and future opportunities for nanowirebased flexible sensors.
基金supported by the National Key R&D Program of China(Grant No.2022YFC2106100)the National Natural Science Foundation of China(Grant Nos.22078011,22378016,and 22238001)Guangdong Key Area Research and Development Program(Grant No.2022B1111080003).
文摘The engineering of microbial cell factories for the production of high-value chemicals from renewable resources presents several challenges,including the optimization of key enzymes,pathway fluxes and metabolic networks.Addressing these challenges involves the development of synthetic auxotrophs,a strategy that links cell growth with enzyme properties or biosynthetic pathways.This linkage allows for the improvement of enzyme properties by in vivo directed enzyme evolution,the enhancement of metabolic pathway fluxes under growth pressure,and remodeling of metabolic networks through directed strain evolution.The advantage of employing synthetic auxotrophs lies in the power of growth-coupled selection,which is not only high-throughput but also labor-saving,greatly simplifying the development of both strains and enzymes.Synthetic auxotrophs play a pivotal role in advancing microbial cell factories,offering benefits from enzyme optimization to the manipulation of metabolic networks within single microbes.Furthermore,this strategy extends to coculture systems,enabling collaboration within microbial communities.This review highlights the recently developed applications of synthetic auxotrophs as microbial cell factories,and discusses future perspectives,aiming to provide a practical guide for growth-coupled models to produce value-added chemicals as part of a sustainable biorefinery.
基金the financial supports received from the National Key Research Program of China under granted No.92164201National Natural Science Foundation of China for Distinguished Young Scholars No.62325403National Natural Science Foundation of China under Nos.62104100 and 61921005,and 61974064.
文摘Reconfigurable field-effect transistors(R-FETs)that can dynamically reconfigure the transistor polarity,from n-type to p-type channel or vice versa,represent a promising new approach to reduce the logic complexity and granularity of programmable electronics.Although R-FETs have been successfully demonstrated upon silicon nanowire(SiNW)channels,a pair of extra program gates is still needed to control the source/drain(S/D)contacts.In this work,we propose a rather simple single gate R-FET structure with an asymmetric S/D electrode contact,where the FET channel polarity can be altered by changing the sign of channel bias V_(ds).These R-FETs were fabricated upon an orderly array of planar SiNW channels,grown via in-plane solid-liquid-solid mechanism,and contacted by Ti/Al and Pt/Au at the S/D electrodes,respectively.Remarkably,this channel-bias-controlled R-FET strategy has been successfully testified and implemented upon both p-typedoped(with indium dopants)or n-type-doped(phosphorus)SiNW channels,whereas the R-FET prototypes demonstrate an impressive high I_(on/off) ratio of>10^(6) and a steep subthreshold swing of 79 mV/dec.These results indicate a rather simple,compact and generic enough R-FET strategy for the construction of a new generation of SiNW-based programmable and low-power electronics.
基金supported by the National Basic Research 973 Program(No.2014CB921101)the National Natural Science Foundation of China(No.61674075)+5 种基金the National Key Research and Development Program of China(No.2017YFA0205003)the Jiangsu Excellent Young Scholar Program(No.BK20160020)the Scientific and Technological Support Program in Jiangsu Province(No.BE2014147-2)the Jiangsu Shuangchuang Team's Personal Programthe Fundamental Research Funds for the Central Universitiesthe China Scholarship Council and the Postgraduate Program of Jiangsu Province(No.KYZZ160052)
文摘Crystalline silicon（c-Si） is unambiguously the most important semiconductor that underpins the development of modern microelectronics and optoelectronics, though the rigid and brittle nature of bulk c-Si makes it difficult to implement directly for stretchable applications. Fortunately, the one-dimensional（1 D） geometry, or the line-shape, of Si nanowire（SiNW） can be engineered into elastic springs, which indicates an exciting opportunity to fabricate highly stretchable 1 D c-Si channels. The implementation of such line-shape-engineering strategy demands both a tiny diameter of the SiNWs, in order to accommodate the strains under large stretching, and a precise growth location, orientation and path control to facilitate device integration. In this review, we will first introduce the recent progresses of an in-plane self-assembly growth of SiNW springs, via a new in-plane solid-liquidsolid（IPSLS） mechanism, where mono-like but elastic SiNW springs are produced by surface-running metal droplets that absorb amorphous Si thin film as precursor. Then, the critical growth control and engineering parameters, the mechanical properties of the SiNW springs and the prospects of developing c-Si based stretchable electronics, will be addressed. This efficient line-shape-engineering strategy of SiNW springs, accomplished via a low temperature batch-manufacturing, holds a strong promise to extend the legend of modern Si technology into the emerging stretchable electronic applications, where the high carrier mobility, excellent stability and established doping and passivation controls of c-Si can be well inherited.
文摘It has been well known that the development of microelectronic and integrated circuit （IC）, mainly based on silicon materials, have changed the way of our life dramatically and accelerated the development and innovation of new technologies. With the increase of integration density in ICs, the gate lengths of transistors are now scaled down to 7 nm, leading to fundamental challenges to keep up with the Moore＇s law. One possible solution is to integrate optical circuits into the Si microelectronic platform to achieve high density electronic-photonic integration.
